SGS Thomson Microelectronics LCP3121 Datasheet

LCP3121
ApplicationSpecific Discretes
A.S.D.
FEATURESAND BENEFITS
UNIDIRECTIONAL OVERVOLTAGE SUP­PRESSOR PROGRAMMABLE BY VOLTAGE ANDCURRENT:
PROGRAMMABLE BREAKDOWN VOLTAGE UP TO100V.
PROGRAMMABLE CURRENT LIMITATION FROM120mATO600mA.
MULTI-LINE PROTECTION MODE : ONE DE­VICECANPROTECT SEVERALLINES.
HIGH SURGECURRENTCAPABILITY:
=100Afor 10/1000 µs.
I
PP
DESCRIPTION
Dedicated to the protection of sensitive telecom equipment, the LCP3121 provides protection which can be programmed by both voltage and current.
Thebreakdownvoltagecanbe easilyprogrammed by usingan externalzenerdiode.
Theprotectionfunctionprogrammedbythecurrent is achievedwith the use of a resistorbetween the gate andthe cathode.The value of the resistorwill determine the level of the desired current before the triggeringof thedevice.
A multipleprotectionmodeis alsoperformedwhen using several diodesproviding each line interface with an optimizedprotectionlevel.
If desired,abidirectionalprotectionfunctioncanbe achievedby the use of twoLCP3121.
COMPLIESWITHTHEFOLLOWINGSTANDARDS: CCITTK20 : 10/700µs 1kV
5/310µs 25A
VDE0433: 10/700µs 2kV
5/310µs 50A
VDE0878: 1.2/50µs 1.5kV
1/20µs 40A
FCCpart68 : 2/10µs 2.5kV
2/10µs 200A(*)
BELLCORE TR-NWT-001089: 2/10µs 2.5kV
2/10µs 200A(*)
BELLCORE TR-NWT-000974:
(*)with series resistors or PTC.
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 - Ed: 3
10/1000µs 1kV 10/1000µs 100A
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
SO8
PIN-OUTCONFIGURATION
1
C
Gn
2
Gp
3
C
4
Allcathodpins must be externallyconnected
FUNCTIONAL DIAGRAM
A
Gp
Gn
C
C
8
7
A
6
A
C
5
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LCP3121
ABSOLUTE MAXIMUM RATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
V V
T
T
T
Note 1 : Pulse waveform :
Peakpulse current(see note 1) 10/1000µs 100 A Nonrepetitivesurgepeakon-statecurrent
(F= 50Hz) MaximumvoltagebetweenA andC
AC
MaximumvoltagebetweenG (Gnor Gp)and A
GA
Storagetemperaturerange
stg
Maximumjunction temperature
j
Maximumleadtemperaturefor soldering during10s 260 °C
L
10/1000µst
=10µst
r
=1000µs
p
tp= 10ms
t=1s
%I
PP
100
50
0
16
8
100
80
- 40 to + 150 150
t
t
p
r
t
A
V
°C
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
ELECTRICALCHARACTERISTICS(T
Junctionto ambient 170 °C/W
=25°C)
amb
Symbol Parameter
V V V
I I
I
V
C
V I I
Stand-offvoltage
RM
Breakdownvoltage
BR
Breakovervoltage
BO
Holdingcurrent
I
H
Breakovercurrent
BO
Leakagecurrentat V
RM
I
Leakagecurrentat V
R
Peakpulse current
PP
Continuousreversevoltage
R
Off-statecapacitance
off
Gatevoltage
G
Gptriggeringcurrent
GP
Gntriggeringcurrent
GN
RM R
I
PP
I
BO
I
H
V
R
I
RM
V
V
BR
I
R
RM
V
BO
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