SGS Thomson Microelectronics LCP1511D Datasheet
LCP1511D
ApplicationSpecific Discretes
A.S.D.
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
FEATURES
DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR.
WIDENEGATIVEFIRINGVOLTAGERANGE:
=-80V max.
V
MGL
LOWDYNAMICSWITCHINGVOLTAGES:
V
FP
andV
DGL
.
LOWGATE TRIGGERINGCURRENT :
I
= 5mAmax.
GT
PEAKPULSECURRENT:
I
= 30Afor 10/1000µssurge.
PP
HOLDINGCURRENT:
I
=150mA.
H
DESCRIPTION
This device has been especially designed to protect subscriber line card interfaces (SLIC) against
transientovervoltages.
Positive overloads are clipped with 2 diodes.
Negative surges are suppressed by 2 thyristors,
theirbreakdownvoltagebeingreferenced to
throughthegate.
-V
BAT
This component presents a very low gate triggeringcurrent(I
)in ordertoreducethecurrentcon-
GT
sumption on printed circuit board during the firing
phase.
Aparticularattentionhas beengivento theinternal
wire bonding. The ”4-point” configurationensures
reliable protection, eliminating the overvoltage introducedby the parasitic inductancesof the wiring
(Ldi/dt),especiallyfor veryfast transients.
SO8
SCHEMATICDIAGRAM
TIP
1
GATE
NC
2
3
TIP
8
GND
7
GND
6
COMPLIESWITHTHEFOLLOWINGSTAN DAR DS:
CCITTK20 : 10/700µs 1kV
5/310µs 25A
VDE0433 : 10/700µs 2kV
5/310µs 38A (*)
VDE0878 : 1.2/50µs 1.5kV
1/20µs 40A
I3124 :
0.5/700µs 1kV
0.2/310µs 25A
FCCpart 68 :
2/10µs 2.5kV
2/10µs 170A (*)
BELLCORE
TR-NWT-001089: 2/10µs 2.5kV
2/10µs 170A (*)
(*)with seriesresistorsor PTC.
February 1998 Ed:3
RING
TM: ASD is trademarks ofSGS-THOMSON Microelectronics.
45
RING
1/7
LCP1511D
ABSOLUTE MAXIMUM RATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
Peakpulse current
(seenote 1)
I
TSM
Nonrepetitivesurge peak on-statecurrent
(F= 50Hz)
I
GSM
V
MLG
V
MGL
T
T
T
Note 1 : Pulse waveform :
Maximumgate current (halfsine wavetp = 10ms) 2 A
Maximumvoltage LINE / GROUND
Maximumvoltage GATE / LINE
Storagetemperaturerange
stg
Maximumjunction temperature
j
Maximumlead temperaturefor solderingduring10s 260 °C
L
10/1000µst
5/310µst
2/10µst
=10µst
r
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
10/1000µs
5/310µs
2/10µs
tp= 10ms
t=1s
%I
PP
100
50
30
38
170
8
3.5
-100
-80
- 55 to + 150
150
A
A
V
°C
0
t
t
r
p
t
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
ELECTRICALCHARACTERISTICS(T
Symbol Parameter
I
GT
I
I
RM
I
RG
V
V
V
V
V
DGL
V
GATE
V
C Off-statecapacitanceLINE/GND
Junctionto ambient 170 °C/W
=25°C)
amb
I
I
F
Gatetriggeringcurrent
Holdingcurrent
H
Reverseleakage current LINE/GND
Reverse leakage current GATE/LINE
Reversevoltage LINE/GND
RM
Forwarddrop voltageLINE/GND
F
Gatetriggeringvoltage
GT
Peakforwardvoltage LINE/GND
FP
V
GATE
V
RM
V
F
I
RM
I
H
Dynamicswitchingvoltage GATE/LINE
GATE/GNDvoltage
LINE/GNDvoltage
LG
I
PP
V
LG
2/7
LCP1511D
1 - PARAMETERSRELATEDTO THEDIODE LINE/GND(T
amb
=25°C)
Symbol Test conditions Maximum Unit
V
F
V
FP
Note 1 : See test circuit 2 for VFP;Rpis the protection resistor located on the line card.
2 - PARAMETERS RELATEDTO THE PROTECTIONTHYRISTOR
IF=5A tp=500µs3V
10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV R
2/10µs 2.5kV R
=10Ω (seenote 1)
p
=62Ω
p
(T
amb
=25°C)
5
7
12
Symbol Test conditions Min. Max. Unit
V
GND/LINE
V
GATE
at I
GT
Tc=25°CVRG=-75V
=70°CVRG=-75V
T
c
VGATE= -48V (seenote 3)
V
I
GT
I
V
I
RG
DGL
H
GT
10/700µs 1.5kV Rp=10Ω I
1.2/50µs 1.5kV Rp=10Ω I
2/10µs 2.5kV Rp=62Ω I
Note 2 : Seethefunctional holdingcurrent (IH) testcircuit 2.
Note 3 : Seetestcircuit 1 for V
The oscillations with a timeduration lower than50ns arenot taken into account.
=-48V 0.2 5 mA
=-48V(see note 2) 150 mA
2.5 V
5
50
10
20
25
DGL
=30A
PP
=30A
PP
=38A
PP
.
V
µA
V
3 - PARAMETERSRELATEDTO DIODEAND PROTECTIONTHYRISTOR(T
amb
=25°C)
Symbol Test conditions Maximum Unit
I
RM
C
Tc=25°CV
T
=70°CV
c
V
=-3V F=1MHz
R
=-48V F=1MHz
V
R
GATE/LINE
GATE/LINE
= -1V VRM=-75V
= -1V VRM=-75V
5
50
100
50
APPLICATIONNOTE
Inorderto take advantageofthe ”4point”structure
TIP
1
IN
OUT
8
TIP
of the LCP, the TIP and RING lines go across the
device. In such case, the devicewill eliminate the
overvoltages generated by the parasitic induc-
GATE
NC
RING
OUT
7
GND
6
5
RING
2
3
4
IN
tancesof thewiring(Ldi/dt),especiallyfor veryfast
transients.
µA
pF
3/7
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