SGS Thomson Microelectronics LCP150S Datasheet
LCP150S
ApplicationSpecific Discretes
A.S.D.
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
FEATURES
DUALPROGRAMMABLETRANSIENT
SUPPRESSOR
HIGHSURGE CURRENTCAPABILITY.
= 50A,10/1000µs.
-I
PP
= 60A,5/310 µs
-I
PP
IPP=150A,2/10µs.
-
.
HOLDINGCURRENT = 150mA min.
LOWGATE TRIGGERINGCURRENT :
=15 mA max.
I
GT
DESCRIPTION
This device has been especially designed to
protect a subscriber line card interface (SLIC)
againsttransientovervoltage.
Positive overloads are clipped with two diodes,
while negative surges are suppressed by two
protection thyristors, their breakdown voltage
beingis referencedto the -Vbat.
This component presents a very low gate
triggering current (I
) in order to reduce the
GT
current consumption on the PC board during the
firingphase.
SIP4
SCHEMATIC DIAGRAM
COMPLIES WITHTHE FOLLOWING STANDARDS:
CCITT- K20 10/700µs 1kV
5/310µs 25A
VDE0433
10/700µs 2kV
5/200µs 50A
VDE0878 1.2/50µs 1.5kV
1/20µs 40A
FCC part68
2/10µs 2.5kV
2/10µs 150A(*)
BELLCORE
TR-NWT-001089 : 2/10µs 2.5kV
2/10µs 150A(*)
10/1000µs 1kV
10/1000µs 50A(*)
CNET 0.5/700µs 1kV
0.2/310µs 25A
(*)with series resistors or PTC.
TM: ASD is trademarksof SGS-THOMSON Microelectronics.
February 1998 - Ed:3
CONNECTION DIAGRAM
1/6
LCP150S
ABSOLUTE MAXIMUMRATINGS
(T
amb
=25°C)
Symbol Parameter Value Unit
I
I
TSM
I
GSM
V
V
T
PP
MLG
MGL
stg
T
j
T
L
Peakpulsecurrent (see note 1)
Nonrepetit ivesurgepeakon-statecur re nt
F= 50 Hz
Maximumgate current(half sine wave tp = 10 ms) 2 A
MaximumVoltage LINE/GND
MaximumVoltage GATE/LINE
Storagetemperaturerange
Maximumoperatingjunctiontemperature
Maximumlead temperaturefor solderingduring 10s 260 °C
10/1000µs
5/320µs
2/10µs
tp= 10 ms
t=1s
50
60
150
25
8
- 100
-80
- 55 to + 150
150
Note 1: Pulsewaveform
10/1000µstr=10µs tp =1000µs
5/320µstr=5µs tp= 320
µs
2/10µstr=2µs, tp = 10 µs
A
A
V
C
°
C
°
%I
PP
100
50
0
t
t
r
p
t
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
Junction-to-ambient 80
C/W
°
2/6
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