Datasheet LCP02-150M Datasheet (SGS Thomson Microelectronics)

®
LCP02-150M
A.S.D.™
PROGRAMMABLE TRANSIENT VOLTAGE
FEATURES
Protection IC recommended for ringing SLICs.
Wide firing voltage range: from -110V to +95V.
Low gate triggering current
Peak pulse current: IPP= 100A (10/1000µs) .
Holding current: IH= 150mA min.
High power dissipation capability
UL497B approved (file E136224)
MAIN APPLICATIONS
Dual battery supply voltage SLICs
- negative battery supply configuration
-negative &positive batterysupply configuration Central Office (CO)
Private Branch Exchange (PBX)
Digital Loop Carrier (DLC)
Asymmetrical Digital Subscriber Line (ADSL)
Fiber in the Loop (FITL)
Wireless Local Loop (WLL)
Hybrid Fiber Coax (HFC)
ISDN Terminal Adapter
Cable modem
DESCRIPTION
The LCP02-150M has been developed to protect SLICs operating on both negative and positive supplies, as well as on high voltage SLICs. It providescrowbarmodeprotection forboth TIPand RING lines. Surge suppression is assumed for each wire by two thyristor structures, one dedicated to positive surges, the second one to negative surges. Both positive and negative threshold levels are programmable by two gates (Gn and Gp).The use of transistors decreases the battery currents during surge suppression. The LCP02-150M has high Bellcore Core, ITU-T and FCC Part 68 lightning surge ratings, ensuring rugged performance in the field. The choice of the PowerSo-10
TM
package is driven by its high power dissipation capability. In addition, the LCP02-150M is also specified to assist a designer to comply with UL1950, IEC950 and CSA C22.2. It is UL 497B approved (file E136224), and has UL94-V0 resin approved
TM: ASD is trademarks of STMicroelectronics.
May 2003 - Ed: 4B
SUPPRESSOR FOR RINGING SLICS
PowerS0-10™
FUNCTIONAL DIAGRAM
TIP
Gn
GND
RING
PIN-OUT CONFIGURATION
GND
Gp TIP TIP
TIP TIP
GND
Gn RING RING RING RING
Gp
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LCP02-150M
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol Parameter
I
GP
Positive gate triggering current
I
H
I
I
GN
I
H
RG
Negative gate triggering current Holding current Reverse leakage current GATE /
LINE Reverse leakage current Reverse voltage LINE/ GND Dynamic switching voltage GATE
V
V
I
RM
RM
DGL
/ LINE
V
V
GATE
RG
C
GATE / GND voltage Reverse voltage GATE / LINE Capacitance LINE / GND
COMPLIES WITH FOLLOWING STANDARDS
Peak surge
voltage
(V)
Voltage
waveform
(µs)
V
V
RM
GN
Required
peak current
(A)
I
RM
I
RM
I
H
Current
waveform
(µs)
VRMV
GP
Minimum serial
resistor to meet
standard (
)
ITU-T K20
ITU-T K21
VDE0433 VDE0878
IEC61000-4-5
FCC Part 68
lightning surge type A
FCC Part 68
lightning surge type B
BELLCORE
GR-1089-CORE
First level
BELLCORE
GR-1089-CORE
Second level
2/9
6000 1500
6000 1500
10/700 10/700
10/700 10/700
150
37.5 150
37.5
5/310 5/310
5/310
5/310 2000 10/700 50 5/310 ­2000 1.2/50 50 1/20 -
level 4 level 4
1500
800
10/700
1.2/50
10/160 10/560
100 100
200 100
5/310
8/20
10/160 10/560
1000 9/720 25 5/320 -
2500 1000
2/10
10/1000
500 100
2/10
10/1000
5000 2/10 500 2/10 -
-
-
-
-
-
-
-
-
-
-
LCP02-150M
ABSOLUTE RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
max
V
GN
max
V
GP
V
bat
T
op
T
stg
T
L
Note 1: Within the Top range, the LCP02-150M keeps onoperating. The impacts of the ambient temperature are given by derating curves.
Peak pulse current
Non repetitive surge peak on-state current (sinusoidal)
Maximum negative battery voltage range Maximum positive battery voltage range Total battery supply voltage
max
Operating temperature range (see note 1) Storage temperature range Maximum lead temperature for soldering during 10s
10/1000µs
8/20µs
10/560µs
5/310µs
10/160µs
1/20µs 2/10µs
t = 0.2 s
t=1s
t=15min
100 250 120 150 200 250 500
13 10
3.5
See fig.1 -110to 0
0to+95
190
-20 to +85 °C
-55to+150 °C 260 °C
A
A
V
Fig. 1: Test circuit
TIP
Gp from +0V to +95V
Gp
TIP
TIP
TIP
TIP
GND
RING
RING
RING
RING
GND
Gn
Gn from -110V to +0V
∆≤Vbat 190V
RING
Gn connected to negative supply voltage Gp connected to positive supply voltage
V t: differential voltage betweenV and V
ba GpGn
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient
60 °C/W
3/9
LCP02-150M
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
1 - PARAMETERS RELATED TO THE NEGATIVE SUPPRESSOR
Symbol Test conditions Min. Max. Unit
I
Gn
V
Gn/GND
= -60V
5mA
Measured at 50Hz
I
H-
I
RGL-
V
DGL-
Go-No Go test, VGn= -60V 150 Tj = 25°C, V V
Gn/GND
= -60V 10/1000µs 1kV R 10/700µs 2kV R
1.2/50µs 2kV R
= -190V
Gn/line
=25ΩIPP= 30A
P
=25ΩIPP= 30A
P
=25ΩIPP= 30A
P
A
10
6
12
2 - PARAMETERS RELATED TO THE POSITIVE SUPPRESSOR
Symbol Test conditions Min. Max. Unit
I
Gp
V
Gp/GND
= 60V
10 mA
Measured at 50Hz
I
RGL+
V
DGL+
Tj = 25°C, V V
Gp/GND
Gp/line
= +60V 10/1000µs 1kV R 10/700µs 2kV R
1.2/50µs 2kV R
= +190V
=25ΩIPP= 30A
P
=25ΩIPP= 30A
P
=25ΩIPP= 30A
P
A
12
8
18
mA
V
V
3 - PARAMETERS RELATED TO LINE/GND
Symbol Test conditions Typ. Max. Unit
4/9
I
R
Tj = 25°C, V Tj = 25°C, V
C
off
VR= -3V, F =1MHz, VGp= 60V, VGn= -60V
= +90V, V
LINE
= -105V, V
LINE
GP/LINE
GN/LINE
= +1V
= -1V
5 5
150 pF
µA
LCP02-150M
Fig. 2: Non repetitive surge peak on state current
versus overload duration (Tj initial = 25°C).
I (A)
TSM
25
20
15
10
5
0
0.01 0.1 1 10 100 1000
t(s)
F=50Hz
Tj initial=25C
Fig. 4:Variation of junction capacitanceversus re­verse voltage applied (typical calues) with:
= -90V and VGP= +90V.
V
GN
Fig. 3: Relative variation of holding current versus junction temperature.
I (T)/I [T =25°C]
HjHj
2
1.5
1
0.5
0
-20 0 20 40 60 80 100
T(°C)
C(pF)
200
180
160
140
120
100
80
1 10 100
Vline (V)
Line - Line +Line - Line +
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LCP02-150M
TECHNICAL INFORMATION
Fig. 5: LCP02 concept behavior.
Rs1
L 1
GND
-Vbat
TIP
VTip
Ign Igp
Gn
T1
Th1
Th2
T2
Gp
+Vb
Cp
Rs2
Cn
RING
GND
L 2
V Ring
Figure 5 showsthe classical protection circuit using theLCP02-150M crowbar concept. This topology has been developped to protect the new two-battery voltage SLICs. It allows both positive and negative firing thresholds to be programmed. The LCP02-150M has two gates (Gn and Gp). Gn is biased to negative bat­tery voltage -Vbat, while Gp is biased to the positive battery voltage +Vb.
When a negative surge occurs on one wire (L1 for example), a current Ign flows through the base of the transistor T1and then injects a current in the gate of the thyristor Th1 which fires. The entiresurge current flows through the ground. After the surge, when the current flowing through Th1 becomes less negative than the negative holding current, Th1 switches off. This holding current I per figure 2.
When a positive surge occurs on one wire (L1 for example), a current Igp flows through the base of the transistor T2and then injects a current in the gate of the thyristor Th2 which fires. The entiresurge current flows through the ground. After the surge, when the current flowing through Th2 becomes less positive than the positive holding current Ih+, Th2 switches off. This holding current I and is equal to 30mA at 25°C.
The capacitors Cn and Cp are used to speed up the crowbar structure firing during the fast surge rise or fallingedges. Thisallows tominimize thedynamical breakovervoltageat theSLIC Tipand Ringinputs dur­ing fast surges. Please notethat these capacitors are generally available around the SLIC. To be efficient they have to be as close as possible to the LCP02-150M gate pins (Gn and Gp) and to the reference ground track (or plan). The optimized value for Cn and Cp is 220nF.
The seriesresistors Rs1 and Rs2represent the fuse, fuseresistors or the PTCswhich are needed towith­stand the power contactor the power induction tests imposed by the country standards. Taking this factor into account, the actual lightning surge current flowing through the LCP02-150M is equal to :
I surge = Vsurge / (Rg + Rs)
is temperature dependant as
H-
is temperature dependant
H+
With V surge = peak surge voltage imposed by the standard.
Rg = series resistor of the surge generator Rs = series resistor of the line card (e.g. PTC)
The LCP02-150M topology is particularly optimized for the new telecom applications such as cable mo­dem,fiber in theloop, WLLsystems, and decentralized central officefor example.Theschematics offigures 6 and 7 give the 2 most frequent topologies used for these emergent applications.
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Fig. 6: Protection of SLIC with positive and negative battery voltages.
Line card
Rs (*)
LCP02-150M
-Vbat
TIP
GND
220nF
Line
Rs (*)
Rs (*) = PTC or Resistor fuse
Fig. 7: Protection of high voltage SLIC
Line card
Rs (*)
GND
220nF
Line
Rs (*)
Gn
Gn
LCP02
TIP
LCP02
RING
TIP
RING
Gp
Gp
220nF
SLIC
RING
+Vb
-Vbat
TIP
SLIC
RING
Rs (*) = PTC or Resistor fuse
Figure 6 shows the classical protection topology for SLIC using both positive and negative battery volt­ages. With such a protection the SLIC is protected against surge over +Vb and lower than -Vbat. In this case, +Vb can be programmed up to +95V while -Vbat can be programmed down to -110V. Please note that the differential voltage does not exceed V
Figure 7 gives the protection topology for the new SLIC using high negative voltage down to -110V.
max at 190V.
bat
7/9
LCP02-150M
PACKAGE MECHANICAL DATA
PowerSO-10™ (Plastic)
10
6
E
H
1
eB
0.25 M
h
A
F
A1
E4
D D1
E2
5
DETAIL "A"
DETAIL "A"
DIMENSIONS
B
0.10 A B
REF.
Millimeters Inches
Min. Max. Min. Max.
A 3.35 3.65 0.131 0.143
E1
E3
A1 0.00 0.10 0.00 0.0039
B 0.40 0.60 0.0157 0.0236
SEATING
PLANE
A C
Q
C 0.35 0.55 0.0137 0.0217 D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.299
E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.299
SEATING
PLANE
A1
L
a
E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240
e 1.27 Typ. 0.05 Typ.
F 1.25 1.35 0.0492 0.0531
H 13.80 14.40 0.543 0.567
h 0.5 Typ. 0.019 Typ.
L 1.20 1.80 0.0472 0.0708
Q 1.70 Typ 0.067 Typ.
a0°8°0°8°
FOOTPRINT DIMENSIONS (in millimeters)
0.54 - 0.60
14.6 - 14.9
6.30
1.27
0.67 - 0.73
9.5
10.8 - 11.0
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LCP02-150M
ORDER CODE
Ordering Type Marking Package Weight Base qty Delivery mode
LCP02-150M LCP02-150M PowerSO-10 1.02 g 50 Tube
LCP02-150M-TR 600 Tape & Reel
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences of useof such information nor for any infringement of patents orother rights ofthird parties which mayresult from its use.No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replacesall information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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