SGS Thomson Microelectronics HCF4517B Datasheet

HCC/HCF4517B
DUAL 64-STAGE STATIC SHIFT REGISTER
.CLOCKFREQUENCY12MHz (TYP.)ATV
10V
DD
.SCHMITT TRIGGER CLOCK INPUTS ALLOW
.THREE-STATE OUTPUTS
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.STANDARDIZED, SYMMETRICAL OUTPUT
CHARACTERISTICS
.5V, 10V, AND 15VPARAMETRIC RATINGS
.INPUT CURREN OF 100nA AT 18VAND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N°. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTIONOF ”B” SERIESCMOS DEVICES”
=
EY
(Plastic Package)
C1
(ChipCarrier)
ORDERCODES :
HCC4517BF HCF4517BM1
PIN CON NECTION S
(CeramicPackage)
HCF4517BC1
F
DESCRIP TION TheHCC4517B (extendedtemperature range)and
HCF4517B (intermediate temperature range) are
monolithic integrated circuits, available in 16-lead dualin-line plastic or ceramic package.
The HCC/HCF4517B dual 64-stagestaticshift reg­ister consists of two independent registers each having a clock,data, andwriteenable inputandout­puts accessible at taps following the 16th, 32nd, 48th, and 64th stages. These taps also serve as inputpointsallowing data to be inputtedat the 17th, 33rd,and 49th stages whenthe write enable input is a logic 1 andthe clockgoes througha low-to-high transition. The truth table indicates how the clock andwrite enable inputs control the operation of the HCC/HCF4517B. Inputs at the intermediate taps allowentry of 64 bits intothe register with 16 clock pulses. The3-stateoutputspermit connection ofthis device toan external bus.
September 1988
1/12
HCC/HCF4517B
FUN CTION AL DIAG R A M (one half)
ABSOLUTE MAXIMUM RATIN GS
Symbol Parameter Value Unit
* Supply Voltage :HCC Types
V
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor for T
T
Operating Tempera ture : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. * All voltages are with respect to VSS(GND).
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20 – 0.5 to + 18
200 100
– 55 to + 125
–40to+85
V V
mW mW
°C °C
RECOMMENDED OPERATING CO NDITIONS
Symbol Parameter Value Unit
2/12
V
Supply Voltage : HCC T ypes
DD
HCF Types
V
Input Voltage 0 to V
I
T
Operating Temperature : HC C Types
op
HCF Types
3to18 3to15
DD
–55to+125
–40to+85
V V
V
°C °C
LOGIC DIAGRAM AND TRUTH TABLE
HCC/HCF4517B
Clock
0 0 X Q16 Q32 Q48 Q64 01XZZZ Z 1 0 X Q16 Q32 Q48 Q64 11XZZZ Z
/
/
– –
\
\
Write
Enable
0 DI In Q16 Q32 Q48 Q64 1 Di In D17 In D33 In D49 In Z 0 X Q16 Q32 Q48 Q64 1XZZZ Z
Data
Stage 1 6
Tap
Stag e 32
Tap
Stage 48
Tap
Stage 64
Tap
3/12
HCC/HCF4517B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
Symbol Parame te r
Quiescent
I
L
Current
HCC Types
(V) (V) (µA) (V)
0/ 5 5 5 0.04 5 150 0/10 10 10 0.04 10 300 0/15 15 20 0.04 20 600
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
High
Min. Max. Min. Typ. Max. Min. Max.
0/20 20 100 0.08 100 3000
HCF Types
OH
Output High
V
Voltage
0/ 5 5 20 0.04 20 150 0/10 10 40 0.04 40 300 0/15 15 80 0.04 80 600
0/ 5 < 1 5 4.95 4.95 4.95 0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95
OL
Output Low
V
Voltage
5/0 < 1 5 0.05 0.05 0.05 10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High Voltage
0.5/4.5 < 1 5 3.5 3.5 3.5 1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
IL
Input Low
V
Voltage
4.5/0.5 < 1 5 1.5 1.5 1.5 9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
OH
Output Drive Current
HCC Types
I
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
OL
Output Sink Current
HCC Types
I
HCF Types
I
IH,IIL
Input Leakage Current
HCC Types
HCF Types
I
OH,IOL
3-State Output
HCC
Types Leakage Current
Input Capacitance Any Input 5 7.5 pF
C
I
*T
=–55°CforHCC device : – 40°C for HCF device.
Low
*T
= + 125°C for HCC device : + 85°C for HCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD=15V,
Types
0/ 5 0.4 5 0.64 0.51 1 0.36 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36 0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4
–5
0/18
18
± 0.1 ±10
± 0.1 ± 1
Any Input
0/15
0/18
0/18
15 ± 0.3 ±10 18 ± 0.4 ±10
15 ± 1.0 ±10
–5
± 0.3 ± 1
–4
± 0.4 ± 12
–4
± 1.0 ± 7.5
Unit
*
µA
V
V
V
V
mA
mA
µA
µAHCF
4/12
HCC/HCF4517B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, Inputtr,tf= 20ns,CL= 50pF,
amb
RL= 200k)
Symbol Parameter
t
PHL,tPLH
Propagation Delay Time : CL to Bit 16 Tap
t
PL Z,tPHZ
t
PZL,tPZH
t
THL,tTLH
t
se tu p
t
se tu p
3-State Output WE to Bit 16 Tap (see note)
Output Transition Time 5 100 200
Write Enable to Clock 5 – 100 – 50
Data to Clock 5 – 100 – 50
Write Enable to Clock Release Time
t
hold
f
t
CL
Data to Clock 5 100 200
Minimum Clock Pulse Width 5 90 180
W
Maximum Clock Input Frequency
t
f,tr
Maximum Clock Input Rise or Fall Time
Note : Measured at the point of 10% change in output load of 50pF, RL=1kto VDDfor t
Test Conditions Value
V
(V) Min. Typ. M ax.
DD
5200400 10 110 220 15 90 180
575150 10 40 80 15 30 60
10 50 100 15 40 80
10 – 50 – 25 15 – 30 – 15
10 – 60 – 30 15 – 30 – 15
550100 10 25 50 15 20 40
10 50 100 15 25 50
10 40 80 15 25 50
536 10 6 12 15 8 15
5 10 15
UNLIMITED µs
and RL=1kΩ to VSSfor t
PZL,tPLZ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
MHz
PHZ.
5/12
HCC/HCF4517B
WAVEFORMS
OutputLow (sink) CurrentCharacteristics. Output High (source)Current Characteristics.
TypicalTransitionTime vs. Load Capacitance.
6/12
TypicalPropagation Delay Time vs. Load Capacit­ance.
TypicalDynamicPower Dissipation vs. Fre­quency.
Dynamic Power Dissipation and Waveforms.
HCC/HCF4517B
TEST CIRCUITS
7/12
HCC/HCF4517B
TEST CIRCUITS (continued)
8/12
Plastic DIP16 (0.25) MECHANICAL DATA
HCC/HCF4517B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
mm inch
P001C
9/12
HCC/HCF4517B
Ceramic DIP16/1 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787 B 7 0.276
D 3.3 0.130
E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406
P 7.8 8.05 0.307 0.317 Q 5.08 0.200
mm inch
10/12
P053D
PLCC20 MECHANICAL DATA
HCC/HCF4517B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180
d1 2.54 0.100 d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015 G 0.101 0.004
M 1.27 0.050
M1 1.14 0.045
mm inch
P027A
11/12
HCC/HCF4517B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted byimplication or otherwiseunderany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproductsarenotauthorized foruse ascritical componentsin life supportdevicesorsystems without express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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12/12
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