![](/html/29/29a1/29a1463392e5edf525cc5fce906c0f4885c253dfe4e3cc6b3db7cc4d64622d96/bg1.png)
.3-STATEOUTPUT
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.5V, 10V,AND 15V PARAMETRIC RATINGS
.INPUT CURRENTOF100nA AT18V AND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTIONOF ”B”
SERIESCMOS DEVICES”
HCC4 51 2B
HCF4512B
8–CHANNEL DATA SELECTOR
EY
(Plastic Package)
M1
(MicroPackage)
ORDERCODES :
HCC4512BF HCF4512BM1
HCF4512BEY HCF4512BC1
(CeramicPackage)
F
C1
(ChipCarrier)
DESCRIPTION
TheHCC4512B(extended temperature range) and
HCF4512B (intermediate temperature range) are
monolithic integrated circuit, available in 16-lead
dual in-line plastic or ceramic package and plastic
micro package.
The HCC/HCF4512B is an 8-channel data selector
featuring a three-state output that can interface directlywith,anddrive,datalinesof bus-oriented systems.
PIN CON NEC TIONS
June1989
1/12
![](/html/29/29a1/29a1463392e5edf525cc5fce906c0f4885c253dfe4e3cc6b3db7cc4d64622d96/bg2.png)
HCC/HFC4512B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATING S
Symbol Parameter Value Unit
* Supply Voltage :HCC Types
V
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings may cause permanent ddamage to the device. This is a stress rating only
and functionnal operation of the device at these or any other conditions above those indicated in the operationale sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are refered to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 to + 125
–40to+85
V
V
mW
mW
°C
°C
RECOMMENDED OPERATING CO NDITIONS
Symbol Parameter Value Unit
V
T
2/12
Supply Voltage : HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
3to+18
3to+15
DD
– 55 to + 125
–40to+85
V
V
V
°C
°C
![](/html/29/29a1/29a1463392e5edf525cc5fce906c0f4885c253dfe4e3cc6b3db7cc4d64622d96/bg3.png)
TRUTH TABLE
HCC/HCF4512B
Sel. Cont.
ABC
000 0 0 D0
100 0 0 D1
010 0 0 D2
110 0 0 D3
001 0 0 D4
101 0 0 D5
011 0 0 D6
111 0 0 D7
XXX 1 0 0
X X X X 1 High Z
1 = High Level 0 = Low Level X = Don’t Care
Inh. 3-St ate Disable Sel. Output
LOGIC DIAGRAMS
3/12
![](/html/29/29a1/29a1463392e5edf525cc5fce906c0f4885c253dfe4e3cc6b3db7cc4d64622d96/bg4.png)
HCC/HFC4512B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Valu e
Symbol Parameter
(V) (V) (µA) (V)
I
L
Quiescent
Current
HCC
Types
0/ 5 5 5 0.04 5 150
0/10 10 10 0.04 10 300
0/15 15 20 0.04 20 600
0/20 20 100 0.08 100 3000
0/ 5 5 20 0.04 20 150
HCF
Types
OH
Output High
V
Voltage
0/10 10 40 0.04 40 300
0/15 15 80 0.04 80 600
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
OL
Output Low
V
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
IH
Input High
V
Voltage
IL
Input Low
V
Voltage
I
OH
Output
Drive
Current
HCC
Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF
Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
OL
Output
Sink
Current
HCC
Types
I
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
I
IH,IIL
Input
Leakage
Current
HCF
Types
HCC
Types
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
HCF
0/15
Types
I
Omax
3-State
Output
Leakage
Current
HCC
Types
HCF
0/18 0/18
0/18 0/18
Types
Input Capacitance Any Input 5 7.5 pF
C
I
*T
=–55°C for HCC device : – 40°C for HCF device.
Low
*T
= + 125°C for HCC device : + 85°C for HCF device.
High
TheNoise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V,2V min.with VDD=10V, 2.5 V min. withVDD= 15V.
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
–5
18 ± 0.1 ±10
± 0.1 ± 1
Any Input
15 ± 0.3 ±10
18 ± 0.4 ±10
18 ± 1.0 ±10
–5
± 0.3 ± 1
–4
± 0.4 ± 12
–4
± 1.0 7.5
High
Unit
*
µA
V
V
V
V
mA
mA
µA
µA
4/12