SGS Thomson Microelectronics HCF4086M013TR, HCF4086BM1, HCF4086BEY Datasheet
HCF4086B
EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE
■ MEDIUM-SPEED OPERATION
t
= 90ns, t
PHL
■ INHIBIT AND ENABLE IN PUTS
■ QUIESCENT CURRENT SPECIFIED UP TO
= 140ns (Typ.) at 10V
PLH
20V
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF4086B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4086BEY
SOP HCF4086BM1 HCF4086M013TR
HCF4086B contains one 4 -wide 2-input AND-OR
INVERT gates with an INHIBIT EXP inp ut and an
ENABLE/EXP input. INHIBIT/EXP is tied to V
SS
and ENABLE/EXP to VDD. For a 4 wide A-O-I
function.
PIN CONNECTION
1/8September 2002
HCF4086B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 12, 13,
5, 6, 8, 9
3 J Output
10 INHIBIT/EXP
10
4
7
14
A to H Data Inputs
ENABLE/
EXP
NC
V
SS
V
DD
Inhibit Input
Enable Input
Not Connected
Negative Supply Voltage
Positive Supply Voltage
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage value s are referred to V
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
10 mA
±
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
V
2/8
HCF4086B
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
DC SPECIFICATIONS
Symbol Parameter
I
L
V
OH
V
OL
V
IH
V
IL
I
OH
I
OL
I
I
C
I
The Noi se Margin for both "1" a nd "0" level is: 1V min. wit h VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
Test Condition Value
V
(V)
= 25°C
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
Quiescent Current 0/5 5 0.02 1 30 30
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
High Level Output
0/5 <1 5 4.95 4.95 4.95
Voltage
0/15 <1 15 14.95 14.95 14.95
Low Level Output
5/0 <1 5 0.05 0.05 0.05
Voltage
15/0 <1 15 0.05 0.05 0.05
High Level Input
0.5/4.5 <1 5 3.5 3.5 3.5
Voltage
1.5/13.5 <1 15 11 11 11
Low Level Input
4.5/0.5 <1 5 1.5 1.5 1.5
Voltage
13.5/1.5 <1 15 4 4 4
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
Output Sink
0/5 0.4 <1 5 0.44 1 0.36 0.36
Current
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
Current
Input Capacitance
0/18 Any Input 18
Any Input 5 7.5 pF
-5
0.1
±
10
±
1
±
1
±
V
Unit
A
µ
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
A
µ
3/8
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