SGS Thomson Microelectronics HCF4066M013TR Datasheet

QUAD BILATERAL SWITCH FOR TRANSMISSION OR
MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS
15V DIGITALOR ± 7.5V PEAK TO PEAK
SWITCHING
125TYPICAL ON RESISTANCE FOR 15V
OPERATION
SWITCH ON RESISTANCE MATCHED TO
WITHIN 5TYP. OVER 15V SIGNAL INPUT RANGE
TO PEAK SIGNAL RANGE
HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP.at fIS= 10KHz, RL= 10K
HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at fIS= 1KHz, VIS=5Vpp, VDD-VSS> 10V, RL = 10K
EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET CURRENT AND HIGH EFFECTIVE OFF RESISTANCE : 10pA TYP. at VDD-VSS= 10V, T
EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from signal circuit 1012Ω
LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at fIS= 0.9MHz, RL=1K
MATCHEDCONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE: REDUCES OUTPUT SIGNAL TRANSIENTS
FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.)
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRICRATINGS
amb
typ.)
=25°C
HCF4066B
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4066BEY
SOP HCF4066BM1 HCF4066M013TR
INPUT LEAKAGE CURRENT
II= 100nA (MAX) ATVDD= 18V TA=25°C
100% TESTEDFOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OFJEDEC
JESD13B ” STANDARDSPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES”
DESCRIPTION
The HCF4066B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4066B is a QUAD BILATERAL SWITCH intended for the transmission or multiplexing of analog or digital signals. It is pin for pin compatible with HCF4016B, but exhibits a much lower ON resistance. In addition,
PIN CONNECTION
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HCF4066B
the ON resistance is relatively constant over the full input signal range. The HCF4066B consists of four independent bilateral switches. A single control signal is required per switch. Both the p and n device in a given switch are biased ON or OFF simultaneously by the control signal. As shown in schematic diagram , the well of the n-channel device on each switch is either tied to the input when the switch is ON or to VSSwhen the switch is OFF. This configuration eliminates
the variation of the switch-transistor threshold voltage with input signal, and thus keeps the ON resistance low over the full operating signal range. The advantages over single channel switches include peak input signal voltage swings equal to the full supply voltage, and more constant ON impedance over the input signal range. For sample and hold applications, however, the HCF4016B is recommended.
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 8, 11 A to D I/O
2, 3, 9, 10 A to D O/I
13, 5, 6, 12
7
14
CONTROL
AtoD
V V
TRUTH TABLE
SS DD
Independent Inputs/Out­puts
Independent Outputs/ Inputs
Enable Inputs Negative Supply Voltage
Positive Supply Voltage
CONTROL SWITCH FUNCTION
HON
L OFF
SCHEMATIC DIAGRAM (1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITY)
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HCF4066B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to thedevice may occur. Functional operation under these conditions is not implied. All voltage values are referred to V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
DC Input Voltage -0.5 to VDD+ 0.5
I
DC Input Current
I
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
Power Dissipation per Output Transistor 100 mW Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
-55 to +125 °C
-65 to +150 °C
3to20 V
DD
-55 to 125 °C
V
V
ELECTRICAL CHARACTERISTICS
(T
=25°C,Typical temperature coefficient for all VDDvalue is 0.3 %/°C)
amb
Test Condition Value
Symbol Parameter
Quiescent Device
I
L
Current (all switches ON or all switches OFF)
SIGNAL INPUTS (V
Resistance VC=VDDRL= 10K
R
ON
Resistance
ON
) and OUTPUTS (VOS)
IS
(between any 2 of 4 switches)
TDH TotalHarmonic
Distortion
-3dB Cutoff Frequency (Switch on)
-50dB Feedthrough Frequency (switch off)
RON
V
I
(V)
0/5 5 0.01 0.25 7.5 7.5 0/10 10 0.01 0.5 15 15 0/15 15 0.01 1 30 30 0/20 20 0.02 5 150 150
Return to (V
V
IS=VSS
= 10K,VC=V
R
L
V
C=VDD
V
(p-p) = 5V, RL= 10K
IS
)/2
DD-VSS
to V
DD
DD
=5V,VSS= -5V
(sine wave centered in 0V)
f
= 1KHz sine wave
IS
V
C=VDD
V
IS
=5V,VSS= -5V
(p-p) = 5V,RL=1K
(sine wave centered in 0V)
V
C=VSS
V
(p-p) = 5V,RL=1K
IS
= -5V
(sine wave centered in 0V)
V
DD
(V)
5 470 1050 1200 1200
15 125 240 300 300
55
15 15
T
A
Min. Typ. Max. Min. Max. Min. Max.
=25°C
-40 to 85°C -55 to 125°C
Unit
µA
10 180 400 500 500
10 10
0.4 %
40 MHz
1MHz
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