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QUAD BILATERAL SWITCH FOR TRANSMISSION OR
MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS
■ 15V DIGITALOR ± 7.5V PEAK TO PEAK
SWITCHING
■ 125Ω TYPICAL ON RESISTANCE FOR 15V
OPERATION
■ SWITCH ON RESISTANCE MATCHED TO
WITHIN 5Ω TYP. OVER 15V SIGNAL INPUT
RANGE
■ ON RESISTANCE FLAT OVER FULL PEAK
TO PEAK SIGNAL RANGE
■ HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP.at fIS= 10KHz, RL= 10KΩ
■ HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at fIS= 1KHz, VIS=5Vpp,
VDD-VSS> 10V, RL = 10KΩ
■ EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET
CURRENT AND HIGH EFFECTIVE OFF
RESISTANCE : 10pA TYP.
at VDD-VSS= 10V, T
■ EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from
signal circuit 1012Ω
■ LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at fIS= 0.9MHz, RL=1KΩ
■ MATCHEDCONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE: REDUCES
OUTPUT SIGNAL TRANSIENTS
■ FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.)
■ QUIESCENT CURRENT SPECIF. UP TO 20V
■ 5V, 10V AND 15V PARAMETRICRATINGS
amb
typ.)
=25°C
HCF4066B
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4066BEY
SOP HCF4066BM1 HCF4066M013TR
■ INPUT LEAKAGE CURRENT
II= 100nA (MAX) ATVDD= 18V TA=25°C
■ 100% TESTEDFOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OFJEDEC
JESD13B ” STANDARDSPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES”
DESCRIPTION
The HCF4066B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4066B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of
analog or digital signals.
It is pin for pin compatible with HCF4016B, but
exhibits a much lower ON resistance. In addition,
PIN CONNECTION
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HCF4066B
the ON resistance is relatively constant over the
full input signal range. The HCF4066B consists of
four independent bilateral switches. A single
control signal is required per switch. Both the p
and n device in a given switch are biased ON or
OFF simultaneously by the control signal. As
shown in schematic diagram , the well of the
n-channel device on each switch is either tied to
the input when the switch is ON or to VSSwhen
the switch is OFF. This configuration eliminates
the variation of the switch-transistor threshold
voltage with input signal, and thus keeps the ON
resistance low over the full operating signal range.
The advantages over single channel switches
include peak input signal voltage swings equal to
the full supply voltage, and more constant ON
impedance over the input signal range. For
sample and hold applications, however, the
HCF4016B is recommended.
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 8, 11 A to D I/O
2, 3, 9, 10 A to D O/I
13, 5, 6, 12
7
14
CONTROL
AtoD
V
V
TRUTH TABLE
SS
DD
Independent Inputs/Outputs
Independent Outputs/
Inputs
Enable Inputs
Negative Supply Voltage
Positive Supply Voltage
CONTROL SWITCH FUNCTION
HON
L OFF
SCHEMATIC DIAGRAM (1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL
CIRCUITY)
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HCF4066B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to thedevice may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
DC Input Voltage -0.5 to VDD+ 0.5
I
DC Input Current
I
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
-55 to +125 °C
-65 to +150 °C
3to20 V
DD
-55 to 125 °C
V
V
ELECTRICAL CHARACTERISTICS
(T
=25°C,Typical temperature coefficient for all VDDvalue is 0.3 %/°C)
amb
Test Condition Value
Symbol Parameter
Quiescent Device
I
L
Current (all
switches ON or all
switches OFF)
SIGNAL INPUTS (V
Resistance VC=VDDRL= 10KΩ
R
ON
∆
Resistance ∆
ON
) and OUTPUTS (VOS)
IS
(between any 2 of
4 switches)
TDH TotalHarmonic
Distortion
-3dB Cutoff
Frequency (Switch
on)
-50dB Feedthrough
Frequency (switch
off)
RON
V
I
(V)
0/5 5 0.01 0.25 7.5 7.5
0/10 10 0.01 0.5 15 15
0/15 15 0.01 1 30 30
0/20 20 0.02 5 150 150
Return to (V
V
IS=VSS
= 10KΩ,VC=V
R
L
V
C=VDD
V
(p-p) = 5V, RL= 10K
IS
)/2
DD-VSS
to V
DD
DD
=5V,VSS= -5V
(sine wave centered in 0V)
f
= 1KHz sine wave
IS
V
C=VDD
V
IS
=5V,VSS= -5V
(p-p) = 5V,RL=1K
(sine wave centered in 0V)
V
C=VSS
V
(p-p) = 5V,RL=1K
IS
= -5V
(sine wave centered in 0V)
V
DD
(V)
5 470 1050 1200 1200
15 125 240 300 300
55
15 15
Ω
Ω
Ω
T
A
Min. Typ. Max. Min. Max. Min. Max.
=25°C
-40 to 85°C -55 to 125°C
Unit
µA
Ω10 180 400 500 500
Ω10 10
0.4 %
40 MHz
1MHz
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