SGS Thomson Microelectronics BUF460AV Datasheet

NPN TRANSISTOR POWER MODULE

■ EASY TO DRIVE TECHNOLOGY (ETD)

■ HIGH CURRENT POWER BIPOLAR MODULE

■ VERYLOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNALPARASITIC INDUCTANCE

APPLICATIONS:

■ MOTORCONTROL

■ SMPS& UPS

■ WELDINGEQUIPMENT

JUNCTION CASE

th

BUF460AV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Uni t

V

CEO(sus)

V

I

I P

T

V

Collector-Emitte r Volt age (VBE= -5 V) 1000 V

CEV

Collector-Emitte r Volt age (IB= 0) 450 V Emit t er-Base Volt age (IC=0) 7 V

EBO

Collector Cur rent 80 A

I

C

Collector Pe ak Cu r rent (tp= 10 ms ) 160 A

CM

Base Current 18 A

I

B

Base Peak Cur rent (tp= 10 ms) 27 A

BM

Total D issipation at Tc=25oC 270 W

tot

St orage T emperature -65 to 150

stg

Max O peration Junct ion Temperature 150

T

j

Ins ulation W it hstand Voltage (AC -RMS) 2500 V

ISO

o

C

o

C

July 1997

1/7

BUF460AV

THERMAL DATA

R

thj-case

R

thc-h

Ther mal Resistance Junct ion- case Max Ther mal Res istance Cas e-heatsink W it h C onductive Gr ease Applied Max

0.41

0.05

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

CER

I

CEV

I

EBO

V

CEO(SUS)

Collector Cut -off Current (R

BE

=5Ω)

Collector Cut -off Current (V

= -1.5V )

BE

Emit ter Cut -off Curr ent

=0)

(I

C

* Collector-Emitter

Sust aining Volt ag e

∗ DC Cur rent Gain IC=60A VCE=5V 15

h

FE

V

∗ Collector-Emit t er

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat)

Saturation Voltage

di

/dt Rate of Rise of

C

On-stat e Collector

(3 µs)•• Collector-Emitter

V

CE

Dynamic V o lt age

V

(5 µs)•• Collector-Emitt er

CE

Dynamic V o lt age

t t

V

CEW

St orage Time

s

t

Fall Time

f

Cross-over Time

c

Maximum Collector Emit ter Voltage Wit hout S nubber

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

V

CE=VCEV

VCE=V V

CE=VCEV

VCE=V V

=5V 1 mA

EB

IC=0.2A L=25mH

= 450 V

V

clamp

IC=30A IB=3A

=30A IB=3A Tj= 100oC

I

C

I

=60A IB=12A

C

=60A IB=12A Tj= 100oC

I

C

IC=60A IB=12A

=60A IB=12A Tj= 100oC

I

C

VCC=300V RC=0 tp=3µs I

=18A Tj=100oC

B1

VCC=300V RC=30Ω

=18A Tj=100oC

I

B1

VCC=300V RC=30Ω

=18A Tj=100oC

I

B1

IC=30A VCC=50V

=-5V RBB=0.2Ω

V

BB

= 400 V IB1=3A

V

clamp

L=25µHT I

=80A IB1=16A

CWo f f

=-5V VCC=50V

V

BB

L=80µHR

= 125oC

T

j

CEV

Tj=100oC

=100oC

j

=0.2Ω

BB

450 V

0.35

0.5

1.1

150 A / µ s

46V

23V

4.5

0.1

0.3

400 V

0.2 2

2 2

1.5

5

0.2 5

mA mA

V V V V

V V

µs µs µs

2/7

BUF460AV

Safe OperatingAreas

Derating Curve

ThermalImpedance

Collector-EmitterVoltage Versus Base-EmitterResistance

Collector-Emitter Saturation Voltage

Base-EmitterSaturationVoltage

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