NPN TRANSISTOR POWER MODULE
■ EASY TO DRIVE TECHNOLOGY (ETD)
■ HIGH CURRENT POWER BIPOLAR MODULE
■ VERYLOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNALPARASITIC INDUCTANCE
APPLICATIONS:
■ MOTORCONTROL
■ SMPS& UPS
■ WELDINGEQUIPMENT
JUNCTION CASE
th
BUF460AV
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitte r Volt age (VBE= -5 V) 1000 V
CEV
Collector-Emitte r Volt age (IB= 0) 450 V
Emit t er-Base Volt age (IC=0) 7 V
EBO
Collector Cur rent 80 A
I
C
Collector Pe ak Cu r rent (tp= 10 ms ) 160 A
CM
Base Current 18 A
I
B
Base Peak Cur rent (tp= 10 ms) 27 A
BM
Total D issipation at Tc=25oC 270 W
tot
St orage T emperature -65 to 150
stg
Max O peration Junct ion Temperature 150
T
j
Ins ulation W it hstand Voltage (AC -RMS) 2500 V
ISO
o
C
o
C
July 1997
1/7
BUF460AV
THERMAL DATA
R
thj-case
R
thc-h
Ther mal Resistance Junct ion- case Max
Ther mal Res istance Cas e-heatsink W it h C onductive
Gr ease Applied Max
0.41
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
Collector Cut -off
Current (R
BE
=5Ω)
Collector Cut -off
Current (V
= -1.5V )
BE
Emit ter Cut -off Curr ent
=0)
(I
C
* Collector-Emitter
Sust aining Volt ag e
∗ DC Cur rent Gain IC=60A VCE=5V 15
h
FE
V
∗ Collector-Emit t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-stat e Collector
(3 µs)•• Collector-Emitter
V
CE
Dynamic V o lt age
V
(5 µs)•• Collector-Emitt er
CE
Dynamic V o lt age
t
t
V
CEW
St orage Time
s
t
Fall Time
f
Cross-over Time
c
Maximum Collector
Emit ter Voltage
Wit hout S nubber
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
V
=5V 1 mA
EB
IC=0.2A L=25mH
= 450 V
V
clamp
IC=30A IB=3A
=30A IB=3A Tj= 100oC
I
C
I
=60A IB=12A
C
=60A IB=12A Tj= 100oC
I
C
IC=60A IB=12A
=60A IB=12A Tj= 100oC
I
C
VCC=300V RC=0 tp=3µs
I
=18A Tj=100oC
B1
VCC=300V RC=30Ω
=18A Tj=100oC
I
B1
VCC=300V RC=30Ω
=18A Tj=100oC
I
B1
IC=30A VCC=50V
=-5V RBB=0.2Ω
V
BB
= 400 V IB1=3A
V
clamp
L=25µHT
I
=80A IB1=16A
CWo f f
=-5V VCC=50V
V
BB
L=80µHR
= 125oC
T
j
CEV
CEV
Tj=100oC
Tj=100oC
=100oC
j
=0.2Ω
BB
450 V
0.35
0.5
1.1
150 A / µ s
46V
23V
4.5
0.1
0.3
400 V
0.2
2
0.2
2
2
2
1.5
5
0.2
5
mA
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
2/7
BUF460AV
Safe OperatingAreas
Derating Curve
ThermalImpedance
Collector-EmitterVoltage Versus
Base-EmitterResistance
Collector-Emitter Saturation Voltage
Base-EmitterSaturationVoltage
3/7
BUF460AV
ReverseBiased SOA
ReverseBiased SOA
ForwardBiased SOA
ForwardBiased SOA
SwitchingTime Inductive Load
4/7
SwitchingTime Inductive Load Versus
Temperature
BUF460AV
DCCurrent Gain
Turn-onSwitching Waveforms.
Turn-offSwitching Test Circuit
1) Fast electronic switch 2) Non-inductive Resistor
Turn-offSwitching Test Circuit
1) Fast electronicswitch 2) Non-inductive Resistor
3) Fast recovery rectifier
Turn-offSwitching Waveforms.
5/7
BUF460AV
ISOTOPMECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
6/7
BUF460AV
Informationfurnished is believed to beaccurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results from its use.No
license is granted byimplicationor otherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascritical componentsin lifesupport devicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong - Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands -
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