HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPES
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVEREQUIREMENTS
BUF420
BUF420M
NPN POWER TRANSISTOR
APPLICATIONS:
■ SWITCHMODE POWER SUPPLIES
■ MOTORCONTROL
DESCRIPTION
The BUF420 and BUF420M are manufactured
3
2
1
TO-218 TO-3
1
2
(version”R”)
using High Voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capacity. They use a Cellular Emitter
structurewith planar edge terminationto enhance
switching speeds while maintaining a wide
INTERNAL SCHEMATIC DIAGRAM
RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
V
V
V
I
I
P
T
Collector-Emitte r Voltage ( VBE= -1. 5 V) 850 V
CEV
Collector-Emitte r Voltage ( IB= 0) 450 V
CEO
Emit t er-Base Voltage ( IC=0) 7 V
EBO
Collector Current 30 A
I
C
Collector P e ak Current (tp<5ms) 60 A
CM
Base Current 6 A
I
B
Base Pe ak Curr ent ( tp<5ms) 9 A
BM
TO - 218 TO - 3
Total Dissipation at Tc=25oC 200 200 W
tot
St orage T emperature -65 to 15 0
stg
Max O per ation Junct ion T emperature 150
T
j
o
C
o
C
July 1997
1/7
BUF420/ BUF420M
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion- Case M ax 0.63 0.63
TO - 218 TO-3
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus )
Collector C ut -off
Current (R
BE
=5Ω)
Collector C ut -off
Current (I
B
=0)
Emit ter Cut - o f f C urr ent
=0)
(I
C
∗ Co llec tor-Emit t er
V
CE=VCEV
VCE=V
V
V
V
CEVTc
CE=VCEVVBE
CE=VCEVVBE
=5V 1 mA
BE
=100oC
=-1.5V
= -1.5 V Tc=100oC
0.2
1
0.2
1
IC= 200 mA L = 25 mH 450 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emit ter B ase V o lt age
=0)
(I
C
∗ Co llector-Em itt er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of rise on-state
c
Collector C ur rent
V
(3µs) Collector-Emit t er
CE
Dynamic Volt age
V
(5µs) Collector-Emit t er
CE
Dynamic Volt age
t
t
St orage Time
s
t
Fall T ime
f
Cross Over Time
c
I
=50mA 7 V
E
IC=10A IB=1A
=10A IB=1A Tc=100oC
I
C
=20A IB=2A
I
C
=20A IB=2A Tc=100oC
I
C
IC=10A IB=1A
=10A IB=1A Tc=100oC
I
C
I
=20A IB=2A
C
=20A IB=2A Tc=100oC
I
C
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
VCC=300V RC=0 tp=3µs
=1.5A Tj=25oC
I
B1
=1.5A Tj=100oC
I
B1
=6A Tj=100oC
I
B1
70
150
100 A/µs
VCC=300V RC=60Ω
=1.5A Tj=25oC
I
B1
=1.5A Tj=100oC
I
B1
2.1
8
VCC=300V RC=60Ω
I
=1.5A Tj=25oC
B1
=1.5A Tj=100oC
I
B1
IC=10A VCC=50V
=-5V RBB=0.6 Ω
V
BB
= 400 V IB1=0.5A
V
clamp
1.1
4
1
0.05
0.08
L = 0. 25 mH
2
0.1
0.18
V
t
s
t
f
t
c
CEW
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over Time
Maximum Collector
Emit ter V oltage
without Snubber
St orage Time
Fall T ime
Cross Over Time
IC=10A VCC=50V
=-5V RBB=0.6Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0. 25 mH T
=100oC
j
IC=10A VCC=50V
=-5V RBB=0.6Ω
V
BB
V
= 400 V IB1=1A
clamp
L = 0. 25 mH T
=125oC
j
IC=10A VCC=50V
=0 RBB=0.15Ω
V
BB
= 400 V IB1=1A
V
clamp
500 V
1.5
0.04
0.07
L = 0. 25 mH
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/7
BUF420/ BUF420M
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
V
t
s
t
f
t
c
CEW
t
s
t
f
t
c
t
s
t
f
t
c
CEW
St orage Time
Fall T ime
Cross Over Time
Maximum Collector
Emit ter V oltage
without Snubber
St orage Time
Fall T ime
Cross Over Time
St orage Time
Fall T ime
Cross Over Time
Maximum Collector
Emit ter V oltage
without Snubber
IC=10A VCC=50V
=0 RBB=0.15Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0. 25 mH T
=100oC
j
IC=10A VCC=50V
=0 RBB=0.15Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0. 25 mH T
=125oC
j
IC=20A VCC=50V
=-5V RBB=0.6 Ω
V
BB
= 400 V IB1=4A
V
clamp
L = 0. 12 mH
IC=20A VCC=50V
=-5V RBB=0.6Ω
V
BB
= 400 V IB1=4A
V
clamp
L = 0. 12 mH T
I
=30A VCC=50V
CWo f f
=-5V RBB=0.6Ω
V
BB
L = 0. 08 mH I
=125oC
T
j
=125oC
j
=6A
B1
500 V
2.2
0.06
0.12
400 V
3
0.15
0.25
3.5
0.12
0.3
µs
µs
µs
µs
µs
µs
µs
µs
µs
Figure1: Turn-onSwitchingTest Circuit
1) Fast electronic switch 2) Non inductive Resistor
Figure2: Turn-offSwitchingTest Circuit
1) Fast electronic switch 2) Non inductive Resistor 3) Fast recovery rectifier
3/7
BUF420/ BUF420M
Turn-onSwitching Test Waveforms.
Turn-offSwitchingTest Waveforms(inductive load). ForwardBiased Safe OperatingAreas.
ReverseBiased Safe Operating Area StorageTime Versus Pulse Time.
4/7
TO-218 (SOT-93) MECHANICAL DATA
BUF420/ BUF420M
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
E
A
C
L5
D
L6
L3
L2
H
G
¯
F
R
123
P025A
5/7
BUF420/ BUF420M
TO-3 (versionR) MECHANICALDATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
P
G
U
V
N
O
R
B
DA
C
E
P003N
6/7
BUF420/ BUF420M
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor use ascriticalcomponentsinlifesupportdevices or systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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