SGS Thomson Microelectronics BUF410 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVEREQUIREMENTS
APPLICATIONS:
■ SWITCHMODE POWER SUPPLIES
■ MOTORCONTROL
BUF410
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
The BUF410 is manufactured using High Voltage
TO-218
Multi Epitaxial Planar technology for high
switchingspeeds and high voltagecapacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
The BUF series is designed for use in
INTERNAL SCHEMATIC DIAGRAM
high-frequency power supplies and motor control
applications.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
V
V
V
I
I
P
T
Collector-Emitte r Voltage ( VBE= -1. 5 V) 850 V
CEV
Collector-Emitte r Voltage ( IB= 0) 450 V
CEO
Emit t er-Base Volt age ( IC=0) 7 V
EBO
Collector Current 15 A
I
C
Collector P e ak Current (tp<5ms) 30 A
CM
Base Current 3 A
I
B
Base Pe ak C urr ent ( tp<5ms) 4.5 A
BM
Total Dissipation at Tc=25oC 125 W
tot
St orage T emperature -65 to 15 0
stg
Max O per ation Junc t ion T emperature 150
T
j
Max. Op erating J un c tion Temperature 150
T
j
o
C
o
C
o
C
July 1997
1/6
BUF410
THERMAL DATA
R
thj-case
Ther mal Resistance Junc t io n-Cas e M ax 1
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus )
Collector C ut -off
Current (R
=100Ω)
BE
Collector C ut -off
Current (I
B
=0)
Emit ter Cut - o f f C urr ent
(I
=0)
C
∗ Collec tor-Emit ter
V
CE=VCEV
VCE=V
V
V
V
CEVTc
CE=VCEVVBE
CE=VCEVVBE
=5V 1 mA
BE
=100oC
=-1.5V
= -1.5 V Tc=100oC
0.2
1
0.2
1
IC= 200 mA L = 25 mH 450 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emit ter B ase Voltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of rise on-state
c
Collector C ur rent
V
(3µs) Collect or-E mitter
CE
Dynamic Volt age
V
(5µs) Collect or-E mitter
CE
Dynamic Volt age
t
t
St orage Time
s
Fall T ime
t
f
Cross Over Time
c
I
=50mA 7 V
E
IC=5A IB= 0.5 A
=5A IB=0.5A Tc=100oC
I
C
I
=10 A IB=2A
C
=10 A IB=2A Tc=100oC
I
C
IC=5A IB= 0.5 A
=5A IB=0.5A Tc=100oC
I
C
=10 A IB=2A
I
C
=10 A IB=2A Tc=100oC
I
C
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
VCC=300V RC=0 tp=3µs
=0.75A Tj=25oC
I
B1
=0.75A Tj=100oC
I
B1
=3A Tj=100oC
I
B1
45
100
60 A/µs
VCC=300V RC=60Ω
=0.75A Tj=25oC
I
B1
I
=0.75A Tj=100oC
B1
2.1
8
VCC=300V RC=60Ω
=0.75A Tj=25oC
I
B1
=0.75A Tj=100oC
I
B1
IC=5A VCC=50V
V
=-5V RBB=1.2 Ω
BB
= 400 V IB1=0.5A
V
clamp
1.1
4
0.8
0.05
0.08
L=0.5mH
1.8
0.1
0.18
V
t
s
t
f
t
c
CEW
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over Time
Maximum Collector
Emit ter V oltage
without Snubber
St orage Time
Fall T ime
Cross Over Time
IC=5A VCC=50V
=-5V RBB=1.2 Ω
V
BB
= 400 V IB1=0.5A
V
clamp
L=0.5mH T
=100oC
j
IC=5A VCC=50V
=-5V RBB=1.2 Ω
V
BB
= 400 V IB1=0.5A
V
clamp
L=0.5mH T
=125oC
j
IC=5A VCC=50V
=0 RBB=0.3Ω
V
BB
= 400 V IB1=0.5A
V
clamp
500 V
1.5
0.04
0.07
L=0.5mH
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6
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