BU941/BU941P
HIGH VOLTAGE IGNITION COIL DRIVER
■ NPNDARLINGTON
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ VERYRUGGED BIPOLARTECHNOLOGY
■ HIGH OPERATINGJUNCTION
TEMPERATURE
■ WIDERANGE OF PACKAGES
APPLICATIONS
■ HIGH RUGGEDNESS ELECTRONIC
IGNITIONS
BU941PFI
NPN POWER DARLINGTON
TO-3
1
2
3
2
TO-218 ISOWATT218
1
3
2
1
INTERNAL SCHEMATIC DIAGRAM
for TO-3
Emitter: pin 2
Base: pin1
Collector: tab
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Val u e Uni t
BU941 BU941 P BUB941P F I
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 500 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Cur r en t 15 A
I
C
Collector Peak Curre nt 30 A
CM
Base Curre nt 1 A
I
B
Base Peak Current 5 A
BM
Tot al Dissipat ion at Tc=25oC 180 155 65 W
tot
Sto rage Temperature -65 to 200 -65 to 175 -65 to 175
stg
Max. Oper at in g Junct ion Temperature 200 175 175
T
j
o
C
o
C
December 1999
1/8
BU941 / BU941P/ BUB941PFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.97 0.97 2.3
TO-3 TO-218 ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collec t or Cut-off
Current (V
BE
=0)
Collec t or Cut-off
Current (I
B
=0)
Emitt er Cut-of f Curren t
=0)
(I
C
∗ Collec t or- Emitter
Sust aining Voltage
=0)
(I
B
V
∗ Collec t or -Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat )
Saturation Voltage
h
∗ DC Cur rent Gain IC=5A VCE= 10 V 300
FE
V
Diode F orw a rd Voltag e IF=10A 2.5 V
F
Func tiona l Tes t
(see fig. 1)
INDUCTI VE LOAD
t
s
t
f
Storage Time
Fall Time
(see fig. 3)
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
=500V
CE
=500V Tj=125oC
V
CE
=450V
V
CE
V
=450V Tj=125oC
CE
V
=5V 20 mA
EB
I
=100mA L=10mH
C
=400V
V
Clamp
400 V
100
0.5
100
0.5
(See FIG. 4)
IC=8A IB=100mA
=10A IB=250mA
I
C
=12A IB=300mA
I
C
IC=8A IB=100mA
=10A IB=250mA
I
C
=12A IB=300mA
I
C
V
=24V V
CC
Clamp
=400V
10 A
1.6
1.8
2
2.2
2.5
2.7
L=7mH
VCC=12V V
=0 RBE=47Ω
V
BE
L=7mH I
=70mA
I
B
Clamp
=7A
C
=300V
15
0.5
µA
mA
µA
mA
V
V
V
V
V
V
µs
µs
Safe Operating Area DC Current Gain
2/8
BU941 / BU941P / BUB941PFI
DCCurrent Gain
Collector-emitterSaturation Voltage
Collector-emitterSaturationVoltage
Base-emitterSaturation Voltage
SwitchingTime InductiveLoad (see fig.3)
3/8
BU941 / BU941P/ BUB941PFI
FIGURE1: FunctionalTest Circuit FIGURE2: FunctionalTest Waveforms
FIGURE3: SwitchingTime Test Circuit FIGURE4: SustainingVoltage Test Circuit
4/8
TO-3 MECHANICAL DATA
BU941 / BU941P / BUB941PFI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
P
DA
G
U
V
O
N
R
B
C
E
P003F
5/8
BU941 / BU941P/ BUB941PFI
TO-218 (SOT-93) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
E
A
C
L5
D
L6
L3
L2
H
G
¯
F
R
123
P025A
6/8
BU941 / BU941P / BUB941PFI
ISOWATT218MECHANICAL DATA
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight: 4.9 g (typ.)
- MaximumTorque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- Theside of thedissipator must beflat within 80 µm
P025C/A
7/8
BU941 / BU941P/ BUB941PFI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
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