Datasheet BTW69N-800, BTW69N-600, BTW69N-1200, BTW69N-1000, BTW69-800 Datasheet (SGS Thomson Microelectronics)
...
BTW 69 (N)
March 1995
SCR
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
BTW 69
BTW 69 N
Tc=70°C
Tc=75°C
50
55
A
I
T(AV)
Average on-state current (180°
conduction angle,single phase circuit)
BTW 69
BTW 69 N
Tc=70°C
Tc=75°C
32
35
A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp=8.3 ms 525 A
tp=10 ms 500
I2tI
2
t value tp=10 ms 1250 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs
100 A/µs
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230 °C
TOP 3
(Plastic)
K
A
G
.HIGHSURGECAPABILITY
.HIGH ON-STATECURRENT
.HIGH STABILITYAND RELIABILITY
.BTW69 Serie :
INSULATEDVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTW 69 BTW 69 / BTW 69 N Unit
200 400 600 800 1000 1200
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTW 69 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATECHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 50 °C/W
Rth (j-c) DC Junction to case for DC BTW 69 0.9 °C/W
BTW 69 N 0.8
Symbol Test Conditions Value Unit
BTW 69 BTW 69 N
I
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 80 mA
V
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=V
DRMIG
= 200mA
dIG/dt = 1.5A/µs
Tj=25°C TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C TYP 50 mA
I
H
IT= 500mA gate open Tj=25°C MAX 150 mA
V
TM
BTW 69 ITM= 100A
BTW 69 N ITM= 110A tp= 380µs
Tj=25°C MAX 1.9 2.0 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.02 mA
Tj= 125°C6
dV/dt Linear slope up to
VD=67%V
DRM
gate open
V
DRM
≤ 800V
V
DRM
≥ 1000V
Tj= 125°C MIN 500
250
V/µs
tq VD=67%V
DRMITM
= 110A VR= 75V
dITM/dt=30 A/µsdV
D
/dt= 20V/µs
Tj= 125°C TYP 100 µs
P
G (AV)
=1W PGM= 40W (tp = 20 µs) I
FGM
= 8A (tp = 20 µs) V
RGM
=5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 69 (N)
2/5
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 69 N).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact (BTW 69 N).
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 69).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact (BTW 69).
Package I
T(RMS)
V
DRM/VRRM
Sensitivity Specification
A V BTW
BTW 69
(Insulated)
50 200 X
400 X
600 X
800 X
1000 X
1200 X
BTW 69 N
(Uninsulated)
55 600 X
800 X
1000 X
1200 X
BTW 69 (N)
3/5
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles.
Fig.5 : Average on-state current versus case
temperature (BTW 69).
1E-3 1E-2 1E-1 1E+0 1 E+1 1E+2 1E+3
0.01
0.10
1.00
Zth/Rth
Zth(j-c)
Zth( j-a)
tp(s)
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Average on-state current versus case
temperature (BTW 69 N).
Fig.10 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t.
BTW 69 (N)
4/5
Fig11 : On-state characteristics (maximum values).
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
H
R4.6
C
A
G
D
B
P
NN
L
M
J
I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 15.10 15.50 0.594 0.611
B 20.70 21.10 0.814 0.831
C 14.30 15.60 0.561 0.615
D 16.10 16.50 0.632 0.650
G 3.40 - 0.133 -
H 4.40 4.60 0.173 0.182
I 4.08 4.17 0.161 0.164
J 1.45 1.55 0.057 0.062
L 0.50 0.70 0.019 0.028
M 2.70 2.90 0.106 0.115
N 5.40 5.65 0.212 0.223
P 1.20 1.40 0.047 0.056
PACKAGE MECHANICAL DATA
TOP3 Plastic
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BTW 69 (N)
5/5
Loading...