SGS Thomson Microelectronics BTB20-600CW, BTA20-600BW, BTA20-700CW, BTA20-700BW, BTA20-600CW Datasheet
BTA20 BW/CW
®
FEATURES
High commutation: (dI/dt)c > 18A/ms
■
without snubber
High surge current: I
■
V
■
■
up to 800V
DRM
BTA Family:
Insulating voltage = 2500V
TSM
= 200A
(RMS)
(UL recognized: E81734)
DESCRIPTION
The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology.
The SNUBBERLESS concept offer suppression
ofRCnetworkanditis suitable for applicationsuch
as phase control and static switching on inductive
or resistive load.
BTB20 BW/CW
SNUBBERLESS TRIACS
A2
G
A1
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
2
I
dI/dt Critical rate of rise of on-state current
Tstg
Tj
Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
Symbol Parameter
V
DRM
V
RRM
RMS on-state current (360° conduction angle) BTA Tc = 70°C 20 A
BTB Tc = 90°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t value tp = 10ms 200 A2s
Gate supply: I
Storage and operating junction temperature range -40 to +150
= 500mA dIG/dt = 1A/µs
G
Repetitive peak off-state voltage Tj = 125°C
tp = 8.3ms 210 A
tp = 10ms 200
Repetitive
F = 50Hz
Non repetitive 100
-40 to +125
BTA/BTB20-...BW/CW
600 700
600 700 V
20 A/µs
°C
Unit
September 2001 - Ed: 1A
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BTA20 BW/CW BTB20 BW/CW
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 2.8 °C/W
BTB 1.7
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 2.1 °C/W
BTB 1.3
GATE CHARACTERISTICS (maximum values)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20µs) IGM= 4A (tp = 20µs) VGM= 16V (tp = 20µs)
G(AV)
Symbol Testconditions Quadrant
BTA / BTB20
BW CW
I
GT
VD= 12V (DC) RL=33Ω Tj = 25°C I - II - III MIN. 2 1 mA
MAX. 50 35
V
GT
V
GD
tgt VD=V
I
VD= 12V (DC) RL=33Ω Tj= 25°C I - II - III MAX. 1.5 V
VD=V
DRM
DRMIG
dI
/dt = 3A/µs
G
IG= 1.2I
L
GT
RL= 3.3kΩ Tj =125°C I - II - III MIN. 0.2 V
= 500mA
Tj = 25°C I - II - III TYP. 2 µs
Tj = 25°C I - III TYP. 50 - mA
II 90 -
I - II - III MAX. - 80
*I
I
H
= 500mA Gate open Tj = 25°C MAX. 75 50 mA
T
VTM*ITM= 28A tp = 380µs Tj = 25°C MAX. 1.70 V
I
DRM
I
RRM
V
V
DRM
RRM
rated
rated
Tj = 25°C MAX. 0.01 mA
Tj = 125°C MAX. 3
dV/dt * Linear slope up to
VD= 67% V
DRM
gate open
Tj = 125°C TYP. 750 500 V/µs
MIN. 500 250
Unit
(dI/dt)c* Without snubber Tj = 125°C TYP. 36 22 A/ms
MIN. 18 11
* For either polarity of electrode A2voltage with reference to electrode A
1
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