FEATURES
BTA10 GP
TRIACS
.LOWI
.HIGHSURGECURRENT : I
.I
GT
.INSULATINGVOLTAGE= 2500V
(ULRECOGNIZED: E81734)
DESCRIPTION
The BTA10 GP’s use high performance,glass passivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
ABSOLUTE RATINGS (limitingvalues)
Symbol Parameter Value Unit
I
T(RMS)
I
= 13mAmax
H
=120A
TSM
SPECIFIEDINFOURQUADRANTS
(RMS)
RMS on-state current
(360° conduction angle)
TSM
I2tI
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp = 10 ms 72 A2s
A1
A2
G
TO220AB
(Plastic)
Tc = 90 °C10 A
tp = 8.3 ms 126 A
tp = 10 ms 120
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Tstg
Tj
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
Symbol Parameter BTA10- Unit
V
DRM
V
RRM
March 1995
Storage and operating junction temperature range - 40 to + 150
from case
Repetitive peak off-state voltage
Tj = 125 °C
Repetitive
F = 50 Hz
Non
Repetitive
400 GP 600 GP
400 600 V
10 A/µs
50
- 40 to + 125
260 °C
°C
°C
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BTA10 GP
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 4 °C/W
Rth (j-c) AC Junction to case for360° conduction angle
( F= 50 Hz)
3 °C/W
GATECHARACTERISTICS (maximumvalues)
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
GP
I
GT
V
GT
V
GD
tgt VD=V
I
L
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA
IV MAX 75
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 3A/µs
IG=1.2 I
=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
= 500mA
GT
Tj=25°C I-II-III-IV TYP 2 µs
Tj=25°C I-III-IV TYP 20 mA
II 40
IH*I
VTM*ITM= 14A tp= 380µs Tj=25°C MAX 1.5 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dV/dt)c * (dI/dt)c= 2.2A/ms Tj=110°C MIN 1 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
2/4
= 100mA gate open Tj=25°C MAX 13 mA
T
V
V
gate open
DRM
RRM
Rated
Rated
DRM
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.5
Tj=110°C MIN 30 V/µs
TYP 100
TYP 10
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
P(W)
14
12
10
8
6
4
=30
2
0
012345678910
O
180
=60
o
=90
o
= 120
o
=180
o
o
I (A)
T(RMS)
BTA10 GP
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
and T
) for different thermal resistances heatsink +
case
contact.
P(W)
14 -85
12
Rth = 0 C/W
2.5 C/W
10 C/W
10
8
6
4
2
0
0 20406080100120140
o
Tamb ( C)
Tcase ( C)
o
o
o
5C/W
o
amb
o
-95
-105
-115
-125
Fig.3 : RMS on-state current versus case temperature.
I (A)
T(RMS)
12
10
8
6
= 180
o
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110120130
o
Tcase( C)
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zth( j-c)
0.1
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth( j-a)
tp(s )
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
3/4
BTA10 GP
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding values of I2t.
PACKAGE MECHANICAL DATA
TO220AB Plastic
H
J
I
P
A
O
N
==
G
D
B
F
C
Fig.8 : On-state characteristics (maximum values).
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190
I 3.55 4.00 0.140 0.158
L
J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights ofSGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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