SGS Thomson Microelectronics BSP43, BSP42, BSP41, BSP40 Datasheet

■ SILICON EPITA X IAL PLANA R NPN

TRANSISTORS

■ MINIATURE PLASTIC PACKAGE FOR

APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS

■ GENERAL P URPOSE MAINLY INT ENDED

FOR USE IN MEDIUM P OWER INDUSTRIA L
APPLICAT ION AND FOR AUDI O AMP LIFIER
OUTPUT STAGE

■ PNP COMPLEMENTS ARE BSP30, BSP31,

BSP32 AND BSP33 RE SP ECT IVE LY

BSP40/41
BSP42/43

MEDIUM POWER AMPLIFIER

ADVANCE DATA

2

3

2

1

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

BSP40/BSP41 BSP42/BSP43

V
V
V
V

P
T

Collector-Base Voltage (IE = 0) 70 90 V

CBO

Collector-Emitter Voltage (IB = 0) 60 80 V

CEO

Collector-Emitter Voltage (VBE = 0) 70 90 V

CES

Emitter-Base Voltage (IC = 0) 5 V

EBO

Collector Current 1 A

I

C

Base Current 0.1 A

I

B

Total Dissipation at Tc = 25 oC2W

tot

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o

C

o

C

October 1995

1/4

BSP40/41/42/43

THERMAL DATA

R
R

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

thj-amb
thj-tab

•

Thermal Resistance Junction-Ambient Max

•

Thermal Resistance Junction-Collecor Tab Max

62.5
8

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

V

(BR)CBO

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

Collector Cut-off
Current (I

= 0)

E

Collector-Base
Breakdown Voltage
(I

= 0)

E

∗ Collector-Emitter

Breakdown Voltage
(I

= 0)

B

Collector-Emitter
Breakdown Voltage
(V

= 0)

BE

Emitter-Base

= 60 V

V

CB

V

= 60 V Tj = 150 oC

CB

I

= 100 µA

C

for BSP40/BSP41
for BSP42/BSP43

I

= 10 mA

C

for BSP40/BSP41
for BSP42/BSP43

I

= 10 µA

C

for BSP40/BSP41
for BSP42/BSP43

I

= 10 µA 5 V

C

70
90

60
80

70
90

100

50

Breakdown Voltage
(I

= 0)

C

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

Saturation Voltage

h

∗ DC Current Gain for BSP40/BSP41

FE

IC = 150 mA IB = 15 mA
I

= 500 mA IB = 50 mA

C

IC = 150 mA IB = 15 mA
I

= 500 mA IB = 50 mA

C

I

= 100 µA VCE = 5 V

C

I

= 100 mA VCE = 5 V

C

I

= 500 mA VCE = 5 V

C

10
40
30

0.25

0.5
1

1.2

120

for BSP42/BSP43
I

= 100 µA VCE = 5 V

C

I

= 100 mA VCE = 5 V

C

I

= 500 mA VCE = 5 V

C

f

C

CBO

Transition Frequency IC = 50 mA VCE = 10 V f = 35 MHz 100 MHz

T

Collector-Base

IE = 0 VCB = 10 V f = 1 MHz 20 pF

30

100

50

300

Capacitance

C

EBO

Emitter-Base

IC = 0 VEB = 0.5 V f = 1 MHz 90 pF

Capacitance

t

t

∗ Pulsed: Pulse durat ion = 300 µs, dut y cycl e ≤ 1.5 %

Turn-on Time IC = 100 mA IB1 = -IB2 = 5 mA 250 ns

on

Turn-on Time 1000 ns

off

nA
µA

V
V

V
V

V
V

V
V

V
V

2/4