SGS Thomson Microelectronics BD440, BD439, BD442, BD441 Datasheet
BD439/BD440
BD441/BD442
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEM EN TARY PNP - NPN DEVICES
DESCRIPTION
The BD439 and BD441 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package, intented for use in power linear and
switching applications.
The complementary PNP types are BD440, and
BD442 respectively.
SOT-32
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATING S
Symbol Parameter Value Unit
NPN BD439 BD441
PNP BD440 BD442
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 80 V
CBO
Collector-Emitter Voltage (VBE = 0) 60 80 V
CES
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (t ≤ 10 ms) 7 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC36W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
May 1997
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BD439/BD440/ BD441/BD 442
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
for BD439/440 V
for BD441/442 V
for BD439/440 V
for BD441/442 V
= 5 V 1 mA
V
EB
I
= 100 mA for DB439/440
C
for BD441/442
IC = 2 A IB = 0.2 A
= 60 V
CB
= 80 V
CB
= 60 V
CB
= 80 V
CB
∗ Base-Emitter Voltage IC = 10 mA VCE = 5 V
I
= 2 A VCE = 1 V
C
100
100
100
100
60
80
0.8 V
0.58
1.5
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
for BD439/440
for BD441/442
I
for BD439/440
for BD441/442
I
for BD439/440
for BD441/442
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Matched Pair IC = 500 mA VCE = 1 V 1.4
f
Transition frequency IC = 250 mA VCE = 1 V 3 MHz
T
= 500 mA VCE = 1 V
C
= 2 A VCE = 1 V
C
20
15
40
40
25
15
130
130
140
140
µA
µA
µA
µA
V
V
V
V
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