BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
SOT-32
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 22 32 45 V
CBO
Collector-Emitter Voltage (VBE = 0) 22 32 45 V
CES
Collector-Emitter Voltage (IB = 0) 22 32 45 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (t ≤ 10 ms) 7 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC36W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 1997
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BD433/434/435/436/43 7/438
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
= 0)
E
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
EBO
V
CEO(sus)
V
CE(sat)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
= 5 V 1 mA
V
EB
I
= 100 mA for BD433/434
C
for BD435/436
for BD437/438
IC = 2 A IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
V
∗ Base-Emitter Voltage IC = 10 mA VCE = 5 V
BE
I
= 2 A VCE = 1 V
C
for BD433/434
for BD435/436
for BD437/438
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
for BD433/434
for BD435/436
for BD437/438
I
= 500 mA VCE = 1 V
C
I
= 2 A VCE = 1 V
C
for BD433/434
for BD435/436
for BD437/438
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Matched Pair IC = 500 mA VCE = 1 V 1.4
f
Transition frequency IC = 250 mA VCE = 1 V 3 MHz
T
= 22 V
CB
= 32 V
CB
= 45 V
CB
= 22 V
CE
= 32 V
CE
= 45 V
CE
22
32
45
40
40
30
85
50
50
40
0.2
0.2
0.2
0.58
130
130
130
140
100
100
100
100
100
100
0.5
0.5
0.6
1.1
1.1
1.2
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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0016114
BD433/434/435/436/437/438
SOT-32 (TO-126) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
mm inch
H2
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BD433/434/435/436/437/438
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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