SGS Thomson Microelectronics BD336 Datasheet
SILICON PNP POWER DARLINGTON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP DARLING TO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPO SE AMPLIFIERS
BD336
DESCRIPTION
The BD336 is a silicon epitaxial-base PNP
transistor in Darlingon configuration mounted in
SOT-82 plastic package.
It is inteded for use in audio output stages
general amplifier and switching applications.
ABSOL UT E MAXIMU M RATINGS
3
2
1
SOT-82
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -100 V
CBO
Collector-Emitter Voltage (IB = 0) -100 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -6 A
I
C
Collector Peak Current (tp < 10ms) -10 A
CM
Base Current -0.15 A
I
B
Total Dissipation at Tc ≤ 25 oC60W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
July 1997
o
C
o
C
1/4
BD336
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.08
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
I
V
CE(sat)
CBO
CEO
EBO
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -100 V
V
CB
V
= -100 V TC = 150 oC
CB
= -50 V -0.5 mA
V
CE
= -5 V -5 mA
V
EB
-0.2-2mA
IC = -3 A IB = -12 mA -2 V
Saturation Voltage
∗ Base-Emitter Voltage IC = -3 A VCE = -3 V -2.5 V
V
BE
h
∗ DC Current Gain IC = -0.5 A VCE = -3 V
FE
V
∗ Parallel Diode Forward
F
I
= -3 A VCE = -3 V
C
I
= -6 A VCE = -3 V
C
IF = -3 A -1.8 V
750
2700
400
Voltage
h
Small Signal Current
fe
IC = -3 A VCE = -3 V f = 1MHz 150
Gain
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Turn on Time IC = -3 A VCC = -30 V
on
Turn off Time 5 10 µ s
off
I
= -IB2 = -12 mA
B1
12µs
mA
2/4
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