SGS Thomson Microelectronics BD244C, BD244B, BD243C, BD243B Datasheet
BD243B/BD243C
BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronicsPREFERRED
SALESTYPES
DESCRIPTION
The BD243B and BD243C are silicon
Epitaxial-BaseNPN transistors mounted in Jedec
TO-220plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementaryPNP types are BD244B and
BD244C respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD243 B BD243 C
PNP BD244 B BD244 C
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE=0) 80 100 V
CBO
Collector-Emitter Voltage (IB=0) 80 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 6 A
I
C
Collector Peak Current 10 A
CM
Base Current 2 A
I
B
Tot al Dissipation at Tc≤ 25oC
tot
Sto rage T em pe rature -65 to 150
stg
Max. Oper at in g Junctio n T emper at u re 150
T
j
65 W
o
C
o
C
September 1999
1/4
BD243B / BD243C / BD244B/ BD244C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-c a s e Ma x
Ther mal Resist ance Junctio n-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Emitt er Cut-of f Current
(I
=0)
C
∗ Co llec t or -Emit t er
Sust aining Voltage
=0)
(I
B
∗ Collec t or -Emit t er
V
=ratedV
CE
V
=60V 0.7 mA
CE
=5V 1 mA
V
EB
I
=30mA
C
for BD243B/ B D244B
for BD243C/ B D244C
CEO
80
100
0.4 mA
IC=6A IB=1A 1.5 V
Saturation Voltage
∗ Base-Emi tter Voltage IC=6A VCE=4V 2 V
V
BE
h
∗ DC Current Ga in IC=0.3A VCE=4V
FE
h
Small Signa l Cu rr en t
fe
Gain
∗
Pulsed: Pulse duration= 300µs, duty cycle ≤ 2%
For PNPtypes voltage and current values are negative.
=3A VCE=4V
I
C
IC=0.5A VCE=10V f=1MHz
=0.5A VCE=10V f=1KHz320
I
C
30
15
V
V
Safe Operating Area
2/4
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