SGS Thomson Microelectronics BD242A, BD242B, BD242C, BD241C, BD241B Datasheet

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BD241A/B/C BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
SGS-THOMS O N PREF ERRE D SA LES TYP E S
COMPLEMEN TA RY PNP - NPN DEVI CES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.
The complementary PNP types are BD242A, BD242B and BD242C respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C PNP BD242A BD242B BD242C
V V V
I
P P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (RBE = 100 ) 70 90 115 V
CER
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc 25 oC40W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
25 oC2W
amb
o
C
o
C
June 1997
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BD241A/B/C /BD242A/ B/C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off Current (V
BE
= 0)
Collector Cut-off Current (I
= 0)
B
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
Sustaining Voltage
Collector-Emitter
= rated V
V
CE
for BD241A/BD242A V for BD241B/BD242B V for BD241C/BD242C V
= 5 V 1 mA
V
EB
CEO
= 30 V
CE
= 60 V
CE
= 60 V
CE
0.2 mA
0.3
0.3
0.3
IC = 30 mA for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C
60 80
100
IC = 3 A IB = 0.6 A 1.2 V
Saturation Voltage
Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V
V
BE
hFE∗ DC Current Gain IC = 1 A VCE = 4 V
I
= 3 A VCE = 4 V
C
h
Pulsed: Pulse duration = 300 µs, duty cycle 2 % For PNP types voltage and current values are negative. For the characteristics curves see TIP31/TIP32 series.
Small Signal Current
fe
Gain
IC = 0.5 A VCE = 10 V f = 1MHz I
= 0.5 A VCE = 10 V f = 1KHz320
C
25 10
mA mA mA
V V V
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