SGS Thomson Microelectronics BD239C Datasheet
NPN SILICON POWER TRANSISTOR
■ STMicroelectronicsPREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistorin JedecTO-220 plasticpackage.
It is inteded for use in medium power linear and
switchingapplications.
TO-220
BD239C
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
P
T
Collect or-Emitter Voltage (RBE=100Ω)
CER
Collect or-Emitter Voltage (IB=0) 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
I
Collect or Curre nt 2 A
C
Collect or Peak Current 4 A
CM
I
Base Current 0.6 A
B
tot Tot al Dis sipation at T
tot Tot al Dis sipation at T
Storage Temperature -65 to150
stg
T
Max. O pe r ating Junctio n Tempe rature 150
j
≤ 25oC
c
≤ 25oC
amb
115 V
30 W
2W
o
C
o
C
April 1999
1/4
BD239C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res ist an c e Junc tion-cas e Max
Ther mal Res ist an c e Junc tion-am bie nt Max
4.17
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Emitt er Cut-off Current
(I
=0)
C
∗ Co llector- E m itter
V
=100V 0.2 mA
CE
V
=60V 0.3 mA
CE
=5V 1 mA
V
EB
IC= 30 mA 100 V
Sust aining Voltage
∗ Collec t or -Emit t er
V
CE(sat)
IC=1A IB= 0.2 A 0.7 V
Saturation Voltage
∗ Base-Emi tter Voltag e IC=1A VCE=4V 1.3 V
V
BE
h
∗ DC Current Gain IC=0.2A VCE=4V
FE
h
Small S i gnal Cu rr en t
fe
Gain
∗
Pulsed: Pulse duration= 300 µs, duty cycle≤ 2%
=1A VCE=4V
I
C
IC=0.2A VCE=10V f=1MHz
I
=0.2A VCE=10V f=1KHz320
C
40
15
Safe Operating Areas
2/4
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