SGS Thomson Microelectronics BD236, BD235, BD238, BD237 Datasheet
BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
SOT-32
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
V
V
V
V
I
P
T
For PNPtypes voltage and current values are negative.
Collect or- B as e Voltage (IE=0) 60 100 V
CBO
Collect or- B as e Voltage (RBE=1KΩ)60100V
CER
Collector-Emitter Voltage ( IB=0) 60 80 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 2 A
I
C
Collect or Peak C ur rent 6 A
CM
Tot al Diss ipa t ion at Tc=25oC25W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing Junction Temperat u re 150
T
j
o
C
o
C
September 1997
1/5
BD235/BD236/BD237/BD238
THERMAL DATA
R
thj-case
Ther mal Resistance J u nc t io n-c ase Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut- of f
Current (I
E
=0)
Emit ter Cut-o f f Current
=0)
(I
C
∗ Collector-Emitt er
Sust aining V olt age
∗ Collector-Emitt er
V
=ratedV
CE
VCE=ratedV
V
=5V 1 mA
EB
CEO
CEOTc
=150oC
0.1
2
IC=100mA
for BD235/ BD236
for BD237/ BD238
60
80
IC=1A IB= 0.1 A 0.6 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=1A VCE=2V 1.3 V
V
BE
h
∗ DC Curr ent Gain IC=150mA VCE=2V
FE
f
h
FE1/hFE2
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Tr ansition f r eque nc y IC=250mA VCE=10V 3 MHz
T
∗ Matched Pairs IC=150mA VCE=2V 1.6
=1 A VCE=2V
I
C
40
25
mA
mA
V
V
Safe Operating Area DeratingCurves
2/5
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