■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
APPLICATION
■ GENERALPURPOSESWITCHING
DESCRIPTION
The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
BD179
NPN SILICON TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collect or- B as e Volt age (IE=0) 80 V
CBO
Collector-Emitter Voltage ( IB=0) 80 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 3 A
I
C
Base Current 7 A
I
B
Tot al Dissipa t ion at Tc≤ 25oC30W
tot
Storage Temperature -65 t o 1 50
stg
Max. O perating Junct i on Temperat ure 150
T
j
o
C
o
C
September 1997
1/5
BD179
THERMAL DATA
R
thj-case
Ther mal Resistance Junct io n-c ase Max 4.16
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut -off
Current (I
E
=0)
Emit ter Cut -off Curr ent
=0)
(I
C
∗ Co llec tor-Emitter
V
=80V 100 µA
CB
V
=5V 1 mA
EB
IC=100mA 80 V
Sust aining Volt ag e
V
CE(sat)
∗ Collector-Emitter
IC=1A IB= 0.1 A 0.8 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=1A VCE=2V 1.3 V
V
BE
h
∗ DC Current Gain IC=150mA VCE=2V
FE
h
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
hFEGroups IC=150mA VCE= 2 V group 16 100 250
FE
Tr ansition Frequency IC=250mA VCE=10V 3 MHz
T
=1A VCE=2V
I
C
40
15
Safe Operating Area DeratingCurves
2/5
BD179
DCCurrent Gain
Base-EmitterSaturation Voltage
Collector-EmitterSaturationVoltage
3/5
BD179
SOT-32(TO-126)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
4/5
H2
0016114
BD179
Informationfurnished is believed to beaccurate and reliable.However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use ofsuch information nor for any infringementof patents or otherrights ofthird partieswhich may results fromits use.No
license is granted by implicationor otherwiseunder any patent or patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change withoutnotice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedforuseas critical componentsinlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSON Microelectronics -Printed in Italy- All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong- Italy- Japan- Korea - Malaysia -Malta - Morocco - The Netherlands-
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