SGS Thomson Microelectronics BD179 Datasheet
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
APPLICATION
■ GENERALPURPOSESWITCHING
DESCRIPTION
The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
BD179
NPN SILICON TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collect or- B as e Volt age (IE=0) 80 V
CBO
Collector-Emitter Voltage ( IB=0) 80 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 3 A
I
C
Base Current 7 A
I
B
Tot al Dissipa t ion at Tc≤ 25oC30W
tot
Storage Temperature -65 t o 1 50
stg
Max. O perating Junct i on Temperat ure 150
T
j
o
C
o
C
September 1997
1/5
BD179
THERMAL DATA
R
thj-case
Ther mal Resistance Junct io n-c ase Max 4.16
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut -off
Current (I
E
=0)
Emit ter Cut -off Curr ent
=0)
(I
C
∗ Co llec tor-Emitter
V
=80V 100 µA
CB
V
=5V 1 mA
EB
IC=100mA 80 V
Sust aining Volt ag e
V
CE(sat)
∗ Collector-Emitter
IC=1A IB= 0.1 A 0.8 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=1A VCE=2V 1.3 V
V
BE
h
∗ DC Current Gain IC=150mA VCE=2V
FE
h
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
hFEGroups IC=150mA VCE= 2 V group 16 100 250
FE
Tr ansition Frequency IC=250mA VCE=10V 3 MHz
T
=1A VCE=2V
I
C
40
15
Safe Operating Area DeratingCurves
2/5
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