SGS Thomson Microelectronics BD138, BD140, BD136 Datasheet
■ SGS-THOMSONPREFERRED SALESTYPES
■ PNP TRANSISTOR
DESCRIPTION
The BD136, BD138 and BD140 are silicon
epitaxial planar PNP transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementarycircuits.
The complementary NPN types are the BD135
BD137 and BD139.
BD136
BD138/BD140
PNP SILICON TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BD136 BD138 BD140
V
V
V
I
P
P
T
Collect or- B as e Voltage (IE= 0) -45 -60 -80 V
CBO
Collector-Emitter Voltage ( IB= 0) -45 -60 -80 V
CEO
Emitter-Base Voltage ( IC=0) -5 V
EBO
Collect or Current -1. 5 A
I
C
Collect or Peak C ur rent -3 A
CM
Base Current -0.5 A
I
B
Tot al Dissipat ion at Tc≤ 25oC12.5W
tot
Tot al Dissipat ion at T
tot
Storage Temperature -65 to 1 50
stg
Max. O perating Junct i on Temperature 150
T
j
≤ 25oC1.25W
amb
o
C
o
C
June 1997
1/4
BD136/BD138/BD140
THERMAL DATA
R
thj-case
Ther mal Resistance Ju nct ion-cas e Max 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut -off
Current (I
E
=0)
Emit ter Cut- o f f C urr ent
=0)
(I
C
∗ Collector-Emitter
Sust aining Volt ag e
∗ Collector-Emitter
V
=-30V
CB
=-30V TC= 125oC
V
CB
V
=-5V -10 µA
EB
-0.1
-10
IC=-30mA
for B D136
for B D138
for B D140
-45
-60
-80
IC=-0.5A IB= -0 .05 A -0.5 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=-0.5A VCE=-2V -1 V
V
BE
h
∗ DC Current Gain IC=-5mA VCE=-2V
FE
h
hFEGroups IC=-150mA VCE=-2V
FE
=-0.5A VCE=-2V
I
C
I
=-150mA VCE=-2V
C
25
25
40 250
for BD140 gr oup 10 63 160
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
µA
µA
V
V
V
Safe Operating Areas
2/4
Loading...