SGS Thomson Microelectronics BCW30 Datasheet
SMALL SIGNAL PNP TRANSISTORS
Type Marking
BCW30 C 2
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ LOW LEVEL AUDIO AMPLIFICATIONAND
SWITCHING
BCW30
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) -32 V
CES
Collector-Emitter Voltage (IB=0) -32 V
CEO
Collector-Base Voltage (IE=0) -32 V
CBO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 1 A
I
C
Collect or P eak Current -0. 2 A
CM
Total Dis sipation at Tc=25oC300mW
tot
Stora ge Temperature -65 to 150
stg
Max. O perating J unc t i on Temperatur e 150
T
j
o
C
o
C
October 1997
1/4
BCW30
THERMAL DATA
R
• Mounted on a ceramic substrate area = 10 x8 x 0.6mm
• Thermal Resistance Junction-Ambient Max 420
thj-amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
V
(BR)CES
Collector Cut-of f
Current (I
E
=0)
∗ Collector-Em it t er
V
=-30V
CB
=-30V Tj=100oC
V
CB
I
=-10µA-32V
C
-100
-10
Break dow n Voltage
=0)
(V
BE
V
∗ Co llec tor-Em it t er
(BR) CEO
I
=-2mA -32 V
C
Break dow n Voltage
=0)
(I
B
V
(BR) CBO
∗ Co llec tor-Bas e
I
=-10µA-32V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-10µA-5V
C
Break dow n Voltage
=0)
(I
C
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Collector-Bas e
BE(sat)
Saturation Voltage
V
∗ Base-Emitt er O n
BE(on)
IC=-10mA IB=-0.5mA
=-50mA IB= -2.5 mA -0. 18
I
C
IC=-10mA IB=-0.5mA
=-50mA IB=-2.5mA
I
C
-0.72
-0.81
IC=-2mA VCE= -5 V -0.6 -0.75 V
-0.3 V
Volt age
∗ DC Cur rent Gain IC=-10µAVCE=-5V
h
FE
f
C
Tr ansition F r eque ncy IC=-10mA VCE= -5 V f = 100 M Hz 150 MHz
T
Collector Base
CB
=-2mA VCE= -5 V 215
I
C
IE=0 VCB=-10V f=1MHz 7 dB
150
500
Capacit a nc e
NF No is e Fig ure I
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
=-0.2mA VCE=-5V f=1KHz
C
∆f = 200 Hz R
=2KΩ
g
10 dB
nA
µA
V
V
V
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