SGS Thomson Microelectronics BCP56-16, BCP55-16 Datasheet
®
LOW POWER NPN TRANSISTOR
Ordering Code Marking
BCP55-16 BCP5516
■ SILICON EPI TAX IA L PLANAR N PN MEDI UM
VOLTAGE TRANSISTOR
■ SOT-223 PLASTIC PAC KA GE FOR
SURFACE MOUNTING CIRCUITS
■ TAPE A ND REEL PACKING
■ THE PNP COMPLEMENTARY TYPE IS
BCP52-16
BCP55-16
2
3
2
1
APPLICATIONS
■ MEDIUM VOLTA G E LO AD S WIT CH
SOT-223
TRANSISTORS
■ OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
■ AUTOMOTIVE POST-VOLTAGE
REGULATIO N
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) 60 V
CBO
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Collector-Emitter Voltage (RBE = 1KΩ)
CER
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 1 A
C
Collector Peak Current (tp < 5 ms) 1.5 A
CM
I
Base Current 0.1 A
B
Base Peak Current (tp < 5 ms) 0.2 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 1.4 W
amb
60 V
o
C
o
C
September 2003
1/4
BCP55-16
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 89.3
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
= 30 V
V
CB
V
= 30 V Tj = 125 oC
CB
= 100 µA
I
C
100
10
60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= 20 mA 60 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CER
Collector-Emitter
I
= 100 µA
C
60 V
Breakdown Voltage
(R
= 1 KΩ)
BE
V
(BR)EBO
Emitter-Base
= 10 µA
I
E
5V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
IC = 500 mA IB = 50 mA 0.5 V
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = 500 mA VCE = 2 V 1 V
Voltage
h
∗ DC Current Gain IC = 5 mA VCE = 2 V
FE
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Transition Frequency IC = 10 mA VCE = 5 V f = 20 MHz 120 MHz
T
I
= 150 mA VCE = 2 V
C
I
= 500 mA VCE = 2 V
C
40
100
25
250
nA
µA
2/4
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