SGS Thomson Microelectronics BCP56, BCP55 Datasheet
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTORS
■ MINIATURE PLA STI C PACKA G E FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM PO W ER INDUS T RIA L
APPLICAT ION AND FOR AUDI O AMPLIF IER
OUTPUT STAGE
■ PNP COMPLEMENT S ARE B CP52 AND
BCP53 RESPECT I VE LY
BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
BCP55 BCP56
V
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) 60 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Collector-Emitter Voltage (RBE = 1KΩ)60100V
CER
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 1 A
I
C
Collector Peak Current (tp < 5 ms) 1.5 A
CM
Base Current 0.1 A
I
B
Base Peak Current (tp < ms) 0.2 A
BM
Total Dissipation at Tc = 25 oC2W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
1/4
BCP55/56
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
Breakdown Voltage
(I
= 0)
E
∗ Collector-Emitter
Breakdown Voltage
(I
= 0)
B
Collector-Emitter
Breakdown Voltage
(R
= 1 KΩ)
BE
Emitter-Base
= 30 V
V
CB
V
= 30 V Tj = 125 oC
CB
= 100 µA
I
C
for BCP55
for BCP56
I
= 20 mA
C
for BCP55
for BCP56
I
= 100 µA
C
for BCP55
for BCP56
= 10 µA 5 V
I
C
60
100
60
80
60
100
100
10
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = 500 mA IB = 50 mA 0.5 V
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = 500 mA VCE = 2 V 1 V
Voltage
∗ DC Current Gain IC = 5 mA VCE = 2 V
h
FE
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Transition Frequency IC = 10 mA VCE = 5 V f = 35 MHz 130 MHz
T
I
= 150 mA VCE = 2 V for Gr. 6
C
I
= 150 mA VCE = 2 V for Gr. 10
C
I
= 150 mA VCE = 2 V for Gr. 16
C
I
= 500 mA VCE = 2 V
C
25
40
63
100
25
100
160
250
nA
µA
V
V
V
V
V
V
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