SGS Thomson Microelectronics BAS70-05W, BAS70-04W, BAS70J, BAS70-06W, BAS70W Datasheet
BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n VERY SMALL CONDUCTIONLOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARD VOLTAGE DROP
n SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 orSOD-323 small SMD packages.
Single and double diodes with different pining are
available.
K
A
BAS70W
K
A1
BAS70-05W
NC
A2
NC
K
A
A2
K
A1
SOT-323
A
K1
BAS70-06W
A2
K1
A1
BAS70-04W
K2
K2
K2
A
K1
K2
A2
K1
A1
76
A
K
BAS70J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
RRM
FSM
P
T
Repetitive peakreverse voltage 70 V
I
Continuous forward current 70 mA
F
Surge non repetitive forward current tp = 10 ms 1 A
Power dissipation (note 1)
tot
Tamb = 25°C
Maximum storage temperature range - 65 to +150 °C
stg
SOD-323 230 mW
SOT-323
Tj Maximum operating junction temperature * 150 °C
T
Note 1: for doublediodes, Ptot is the total dissipation of both diodes.
dPtot
*:
Maximum temperature for soldering during 10s 260 °C
L
<
dTj Rth j a
thermal runaway condition for a diode on its own heatsink
−1()
May 2000 - Ed: 4B
1/5
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol Parameters Value Unit
R
th (j-a)
Junction to ambient (*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
F
IR** Tj = 25°CV
Pulse test: * tp = 380µs, δ <2%
Tj = 25°CI
*Tj=25°CI
** tp = 5 ms, δ <2%
=10µA70V
R
= 1mA 410 mV
F
= 50V 100 nA
R
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj=25°CV
=0V
R
2pF
F = 1MHz
τ*Tj=25°CI
Krakauer Method
* Effective carrier lifetime.
= 5mA
F
100 ps
2/5
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