BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n VERY SMALL CONDUCTIONLOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARD VOLTAGE DROP
n SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 orSOD-323 small SMD packages.
Single and double diodes with different pining are
available.
K
A
BAS70W
K
A1
BAS70-05W
NC
A2
NC
K
A
A2
K
A1
SOT-323
A
K1
BAS70-06W
A2
K1
A1
BAS70-04W
K2
K2
K2
A
K1
K2
A2
K1
A1
76
A
K
BAS70J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
RRM
FSM
P
T
Repetitive peakreverse voltage 70 V
I
Continuous forward current 70 mA
F
Surge non repetitive forward current tp = 10 ms 1 A
Power dissipation (note 1)
tot
Tamb = 25°C
Maximum storage temperature range - 65 to +150 °C
stg
SOD-323 230 mW
SOT-323
Tj Maximum operating junction temperature * 150 °C
T
Note 1: for doublediodes, Ptot is the total dissipation of both diodes.
dPtot
*:
Maximum temperature for soldering during 10s 260 °C
L
<
dTj Rth j a
thermal runaway condition for a diode on its own heatsink
−1()
May 2000 - Ed: 4B
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BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol Parameters Value Unit
R
th (j-a)
Junction to ambient (*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
F
IR** Tj = 25°CV
Pulse test: * tp = 380µs, δ <2%
Tj = 25°CI
*Tj=25°CI
** tp = 5 ms, δ <2%
=10µA70V
R
= 1mA 410 mV
F
= 50V 100 nA
R
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj=25°CV
=0V
R
2pF
F = 1MHz
τ*Tj=25°CI
Krakauer Method
* Effective carrier lifetime.
= 5mA
F
100 ps
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BAS70J / BAS70W / BAS70-04W /BAS70-05W / BAS70-06W
Fig. 1: Forward voltage drop versus forward
current.
IFM(A)
7E-2
Tj=100°C
Typicalvalues
1E-2
Tj=25°C
Maximum values
1E-3
Tj=25°C
Typicalvalues
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 3: Reverse leakage current versus junction
temperature (typicalvalues).
IR(µA)
5E+2
1E+2
1E+1
VR=70V
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+1
Tj=100°C
1E+0
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
2.0
1.0
F=1MHz
Tj=25°C
1E+0
1E-1
Tj(°C)
1E-2
0 25 50 75 100 125 150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout,
S(Cu)=35µm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10
δ = 0.1
T
Single pulse
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
tp(s)
δ
=tp/T
tp
0.1
1 10 100
VR(V)
Fig. 6: Thermal resistance junction to ambient
versus copper s ur f ace under each lead ( Epoxy
printed circuit board FR4, copper thick ness :
35µm).
Rth(j-a) (°C/W)
600
550
500
450
400
350
S(Cu) (mm )
300
0 5 10 15 20 25 30 35 40 45 50
P=0.2W
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BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATA
SOT-323
A
A1
D
REF.
A 0.8 1.1 0.031 0.043
A1 0.0 0.1 0.0 0.004
b 0.25 0.4 0.010 0.016
c 0.1 0.26 0.004 0.010
b
L
D 1.8 2.0 2.2 0.071 0.079 0.086
E 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 0.026
H
θ
H 1.8 2.1 2.4 0.071 0.083 0.094
E
L 0.1 0.2 0.3 0.004 0.008 0.012
θ 030°030°
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
DIMENSIONS
c
e
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PACKAGE MECHANICAL DATA
SOD-323
BAS70J / BAS70W / BAS70-04W /BAS70-05W / BAS70-06W
H
b
A1
REF.
Millimeters Inches
DIMENSIONS
Min. Max. Min. Max.
E
A 1.17 0.046
A1 0 0.1 0 0.004
D
A
b 0.25 0.44 0.01 0.017
c 0.1 0.25 0.004 0.01
c
Q1
D 1.52 1.8 0.06 0.071
E 1.11 1.45 0.044 0.057
H 2.3 2.7 0.09 0.106
L
L 0.1 0.46 0.004 0.02
Q1 0.1 0.41 0.004 0.016
Ordering type Marking Package Weight Base qty Delivery mode
BAS70W D28 SOT-323 0.006g 3000 Tape & reel
BAS70-04W D31 SOT-323 0.006g 3000 Tape & reel
BAS70-05W D30 SOT-323 0.006g 3000 Tape & reel
BAS70-06W D29 SOT-323 0.006g 3000 Tape & reel
BAS70J 76 SOD-323 0.005g 3000 Tape & reel
n Epoxy meets UL94,V0
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