SGS Thomson Microelectronics BAS70-06, BAS70-05, BAS70-04, BAR18 Datasheet
BAR 18
SMALLSIGNAL SCHOTTKY DIODES
DESCRIPTION
Low turn-on and high breakdown voltage diodes
intendedfor ultrafastswitchingand UHF detectors
in hybrid micro circuits.
K
K
A
BAR18
A2
BAS70-05
BAS 70-04
A1
K2
N.C.
A
A1
SOT-23
(Plastic)
→
K1
A2
BAS70-04
K1
K2
BAS70-06
06
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitivepeak reverse voltage
I
F
Continuousforward current
P
tot
Powerdissipation (note 1) Tamb= 25°C
T
stg
Maximumstorage temperaturerange
Tj
Maximumoperating junction temperature*
T
L
Maximumtemperaturefor solderingduring 10s
Note 1: for double diodes, Ptot isthetotal dissipation of both diodes
*:
dPtot
dTj
<
Rth(j−a
1
thermal runaway conditionfor a diode on its own heatsink
)
70 V
15 mA
250 mW
- 65 to +150
150
260
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient(*)
(*) Mounted on epoxy board withrecommended pad layout.
500
°
°C
°
C/W
°
C
C
June 1999 - Ed: 2A
1/4
BAR 18/BAS 70-04 →06
ELECTRICALCHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
VF*
IR**
Pulse test: * tp = 380µs, δ <2%
Tj = 25°CIR=10µA
Tj = 25°CI
Tj = 25°CV
** tp= 5 ms, δ <2%
F
R
= 1mA
= 50V
DYNAMICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
*Tj=25
τ
* Effectivecarrier lifetime.
Tj = 25°CV
= 0V F = 1MHz
R
CI
= 5mA Krakauer Method 100 ps
°
F
70 V
410 mV
200 nA
2pF
Fig. 1-1:
Forward voltage drop versus forward
current(low level).
IFM(A)
2.0E-2
1.8E-2
1.6E-2
Tj=100°C
Typicalvalues
1.4E-2
1.2E-2
1.0E-2
8.0E-3
6.0E-3
Tj=25°C
Typicalvalues
4.0E-3
2.0E-3
0.0E+0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 2:
Reverse leakage current versus reverse
VFM(V)
voltageapplied (typicalvalues).
IR(µA)
1E+1
1E+0
1E-1
Tj=100°C
Tj=25°C
Tj=25°C
Maximumvalues
Fig. 1-2: Forward voltage drop versus forward
current(high level).
IFM(A)
7E-2
Tj=100°C
Typicalvalues
1E-2
Tj=25°C
Maximumvalues
1E-3
Tj=25°C
Typicalvalues
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 3:
Reverse leakage current versus junction
temperature(typical values).
IR(µA)
5E+2
VR=70V
1E+2
1E+1
1E+0
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
2/4
1E-1
1E-2
0 25 50 75 100 125 150
Tj(°C)
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