SGS Thomson Microelectronics BAS70-05WFILM, BAS70-04WFILM, BAS70JFILM, BAS70-06WFILM, BAS70WFILM Datasheet
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BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
®
May 2000 - Ed: 4B
SMALL SIGNAL SCHOTTKY DIODE
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
n
SURFACE MOUNT DEVICE
FEATURES AND BENEFITS
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
DESCRIPTION
K
A
A
NC
NC
K
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 70 V
I
F
Continuous forward current 70 mA
I
FSM
Surge non repetitive forward current tp = 10 ms 1 A
P
tot
Power dissipation (note 1)
Tamb = 25°C
SOD-323 230 mW
SOT-323
T
stg
Maximum storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
T
L
Maximum temperature for soldering during 10s 260 °C
Note 1: fordouble diodes, Ptot is the total dissipation of both diodes.
ABSOLUTE RATINGS (limiting values)
BAS70W
A1
A1
A2
A2
K
K
BAS70-05W
A1
K2
A2
K1
A2
K1
K2
A1
BAS70-04W
*:
dPtot
dTj Rth j a
<
−1()
thermal runaway condition for a diode on its own heatsink
K1
K1
K2
K2
A
A
BAS70-06W
BAS70J
A
K
76
SOT-323
SOD-323
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
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Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°C IR=10µA70V
V
F
* Tj=25°CI
F
= 1mA 410 mV
I
R
** Tj= 25°CV
R
= 50V 100 nA
Pulse test: * tp = 380µs, δ <2%
** tp = 5 ms, δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Test Conditions Min. Typ. Max. Unit
C Tj = 25°C V
R
=0V
F = 1MHz
2pF
τ* Tj=25°CI
F
= 5mA
Krakauer Method
100 ps
* Effective carrier life time.
DYNAMIC CHARACTERISTICS
Symbol Parameters Value Unit
R
th (j-a)
Junction to ambient (*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mounted on epoxy board, with recommended pad layout.
THERMAL RESISTANCE
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