2N6487
®
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
TO-220
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6487 2N6488
PNP 2N6490
V
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 70 90 V
CBO
Collector-Emitter Voltage (VBE=-1.5V,RBE=100Ω)
CEX
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 15 A
C
Base Current 5 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
70 90 V
75 W
o
C
o
C
April 1999
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2N6487 / 2N6488 / 2N6490
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.67
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CER
I
CEO
I
EBO
V
CEO(sus)
V
CER(sus)
V
CEX(sus)
V
CE(sat)
VBE∗ Base-Emitter Voltage IC = 5 A VCE = 4 V
hFE∗ DC Current Gain IC = 5 A VCE = 4 V
h
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Collector Cut-off
Current (V
Collector Cut-off
Current (RBE = 100Ω)
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Sustaining Voltage
(RBE = 100Ω)
∗ Collector-Emitter
Sustaining Voltage
(V
=-1.5V, RBE=100Ω)
BE
∗ Collector-Emitter
Saturation Voltage
Small Signal Current
fe
Gain
= -1.5V)
BE
= 0)
B
for 2N6487/2N6490 V
for 2N6488 V
T
= 150 oC
c
for 2N6487/2N6490 V
for 2N6488 V
= 65 V
CE
= 85 V
CE
= 60 V
CE
= 80 V
CE
for 2N6487/2N6490 VCE = 55 V
for 2N6488 V
for 2N6487/2N6490 V
for 2N6488 V
= 5 V 1 mA
V
EB
= 75 V
CE
= 30 V
CE
= 40 V
CE
0.5
0.5
5
5
0.5
0.5
1
1
IC = 200 mA
for 2N6487/2N6490
for 2N6488
60
80
IC = 200 mA
for 2N6487/2N6490
for 2N6488
= 200 mA
I
C
for 2N6487/2N6490
for 2N6488
IC = 5 A IB = 0.5 A
I
= 15 A IB = 5 A
C
65
85
70
90
1.3
3.5
1.3
I
= 15 A VCE = 4 V
C
I
= 15 A VCE = 4 V
C
20
5
3.5
150
IC = 1 A VCE = 4 V f = 1MHz
I
= 1 A VCE = 4 V f = 1KHz525
C
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
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TO-220 MECHANICAL DATA
2N6487 / 2N6488 / 2N6490
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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2N6487 / 2N6488 / 2N6490
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectro nics – Printed in Italy – All Rights Reserved
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