SGS Thomson Microelectronics 2N6490, 2N6488, 2N6487 Datasheet
2N6487
®
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
TO-220
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6487 2N6488
PNP 2N6490
V
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 70 90 V
CBO
Collector-Emitter Voltage (VBE=-1.5V,RBE=100Ω)
CEX
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 15 A
C
Base Current 5 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
70 90 V
75 W
o
C
o
C
April 1999
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2N6487 / 2N6488 / 2N6490
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.67
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CER
I
CEO
I
EBO
V
CEO(sus)
V
CER(sus)
V
CEX(sus)
V
CE(sat)
VBE∗ Base-Emitter Voltage IC = 5 A VCE = 4 V
hFE∗ DC Current Gain IC = 5 A VCE = 4 V
h
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Collector Cut-off
Current (V
Collector Cut-off
Current (RBE = 100Ω)
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Sustaining Voltage
(RBE = 100Ω)
∗ Collector-Emitter
Sustaining Voltage
(V
=-1.5V, RBE=100Ω)
BE
∗ Collector-Emitter
Saturation Voltage
Small Signal Current
fe
Gain
= -1.5V)
BE
= 0)
B
for 2N6487/2N6490 V
for 2N6488 V
T
= 150 oC
c
for 2N6487/2N6490 V
for 2N6488 V
= 65 V
CE
= 85 V
CE
= 60 V
CE
= 80 V
CE
for 2N6487/2N6490 VCE = 55 V
for 2N6488 V
for 2N6487/2N6490 V
for 2N6488 V
= 5 V 1 mA
V
EB
= 75 V
CE
= 30 V
CE
= 40 V
CE
0.5
0.5
5
5
0.5
0.5
1
1
IC = 200 mA
for 2N6487/2N6490
for 2N6488
60
80
IC = 200 mA
for 2N6487/2N6490
for 2N6488
= 200 mA
I
C
for 2N6487/2N6490
for 2N6488
IC = 5 A IB = 0.5 A
I
= 15 A IB = 5 A
C
65
85
70
90
1.3
3.5
1.3
I
= 15 A VCE = 4 V
C
I
= 15 A VCE = 4 V
C
20
5
3.5
150
IC = 1 A VCE = 4 V f = 1MHz
I
= 1 A VCE = 4 V f = 1KHz525
C
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
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