Specifications
Absolute Maximum Ratings at Ta = 25°C, VSS= 0 V
Allowable Operating Ranges at Ta = 25°C, VSS= 0 V
Note: Due to the structure of this LSI, an identical voltage must be supplied to all the power supply pins.
Electrical Characteristics at Ta = 25°C, VDD= 5 V, VSS= 0 V
No. 5223-3/34
LC78621E
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
DD
max VSS– 0.3 to VSS+ 7.0 V
Maximum input voltage V
IN
max VSS– 0.3 to VDD+ 0.3 V
Maximum output voltage V
OUT
max VSS– 0.3 to VDD+ 0.3 V
Allowable power dissipation Pd max 300 mW
Operating temperature Topr –20 to +75 °C
Storage temperature Tstg –40 to +125 °C
Parameter Symbol Conditions min typ max Unit
Supply voltage V
DD
VDD, XVDD, LVDD, RVDD, VV
DD
3.6 5.5 V
DEFI, FZD, ASDACK, ASDFIN, ASDFIR, ASLRCK,
Input high-level voltage
VIH(1) COIN, RES, HFL, TES, SBCK, RWC, CQCK, TAI, 0.7 V
DD
V
DD
V
TEST1 to TEST5, DEMO, CS
VIH(2) EFMIN 0.6 V
DD
V
DD
V
DEFI, FZD, ASDACK, ASDFIN, ASDFIR, ASLRCK,
Input low-level voltage
VIL(1) COIN, RES, HFL, TES, SBCK, RWC, CQCK, TAI, 0 0.3 V
DD
V
TEST1 to TEST5, DEMO, CS
VIL(2) EFMIN 0 0.4 V
DD
V
Data setup time t
set up
COIN, RWC: Figure 1 400 ns
Data hold time t
hold
COIN, RWC: Figure 1 400 ns
High-level clock pulse width t
WøH
SBCK, CQCK: Figures 1, 2 and 3 400 ns
Low-level clock pulse width t
WøL
SBCK, CQCK: Figures 1, 2 and 3 400 ns
Data read access time t
RAC
SQOUT, PW: Figures 2 and 3 0 400 ns
Command transfer time t
RWC
RWC: Figure 1 1000 ns
Subcode Q read enable time t
SQE
WRQ: Figure 2, with no RWC signal 11.2 ms
Subcode read cycle t
sc
SFSY: Figure 3 136 µs
Subcode read enable time t
se
SFSY: Figure 3 400 ns
Input level
V
IN
(1) EFMIN 1.0 Vp-p
V
IN
(2) XIN: Input capacitor coupled 1.0 Vp-p
Operating frequency range fop EFMIN 10 MHz
Crystal oscillator frequency
fX (1) X
IN
, X
OUT
: In 16M mode 16.9344 MHz
fX (2) X
IN
, X
OUT
: In 32M mode 33.8688 MHz
Parameter Symbol Conditions min typ max Unit
Current drain I
DD
30 45 mA
DEFI, EFMIN, FZD, ASDACK, ASDFIN, ASDFIR,
Input high-level current
IIH(1) ASLRCK, COIN, RES, HFL, TES, SBCK, RWC, 5 µA
CQCK: V
IN
= 5 V
I
IH
(2) TAI, TEST1 to TEST5, DEMO, CS: VIN= VDD= 5.5 V 25 75 µA
DEFI, EFMIN, FZD, ASDACK, ASDFIN, ASDFIR,
Input low-level current I
IL
ASLRCK, COIN, RES, HFL, TES, SBCK, RWC, –5 µA
CQCK, TAI, TEST1 to TEST5, DEMO, CS: V
IN
= 0 V
EFMO, EFMO, CLV
+
, CLV–, V/P, FOCS, PCK, FSEQ,
V
OH
(1) TOFF, TGL, THLD, JP+, JP–, EMPH, EFLG, FSX: 4 V
I
OH
= –1 mA
MUTEL, MUTER, LRCKO, DFORO, DFOLO, DACKO,
V
OH
(2)
TST10, LRSY, CK2, ROMXA, C2F, SBSY, PW, SFSY,
4 V
Output high-level voltage
WRQ, SQOUT, TST11, 16M, 4.2M, CONT:
I
OH
= –0.5 mA
V
OH
(3) LASER: IOH= –1 mA 4.6 V
V
OH
(4) DOUT: IOH= –12 mA 4.5 V
V
OH
(5) LCHP, RCHP, LCHN, RCHN: IOH= –1mA 3.0 4.5 V
Continued on next page.