SANYO LC35V1000BTS Datasheet

Ordering number : ENN*7056

41902RM (OT) No. 7056-1/9

Overview

The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion.

Features

• Low-voltage operation: 3.0 to 3.6 V

• Wide operating temperature range: –40 to +85°C

• Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.

• Low current drain Standby mode: 0.05 µA (typical*) at Ta = +25°C *: When VCC= 3.0 V

10.0 µA (maximum) at Ta = +70°C

20.0 µA (maximum) at Ta = +85°C

• Data retention voltage: 2.0 to 3.6 V

• No clock required (fully static circuits)

• Input/output shared function pins, 3-state output pins

• Package 32-pin SOP (525 mil) plastic package: LC35V1000BM 32-pin TSOP (8 ×14 mm) plastic package: LC35V1000BTS

Package Dimensions

unit: mm

3205A-SOP32

unit: mm

3228A-TSOP32DA

0.2

3.1max

14.0

0.8

20.5

11.2

0.4

1.27

0.15

(0.73)

(2.7)

Preliminary

SANYO: SOP32

[LC35V1000BM-70U]

0.5

32 17

1.2max

8.0

0.08

12.4

14.0

0.5

0.2

0.125

(0.25)

(1.0)

SANYO: TSOP32DA

[LC35V1000BTS-70U]

LC35V1000BM, BTS-70U

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Asynchronous Silicon Gate

1M (131,072 words

×8 bits) SRAM

CMOS IC

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Pin Assignment

No. 7056-2/9

LC35V1000BM, BTS-70U

Block Diagram

No. 7056-3/9

LC35V1000BM, BTS-70U

Control

circuit

Data control circuit

Output

buffer

Input

data

buffer

Memory cell array

Raw Decoder

Address buffer

Pin Functions

A0 to A16 Address input

WE Ready/write control input OE Output enable input

CE, CE2 Chip enable input

I/O1 to I/O8 Data I/O

, GND Power supply, ground

Function Table

Note: X indicates H or L.

*: For pulse widths under 30 ns: –2.0 V Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.

Note: These parameters are not measured for all devices, but are sampled values.

Mode CE1 CE2 OE WE I/O Supply current

Ready cycle L H L H Data output I

CCA

Write cycle L H X L Data input I

CCA

Output disable L H H H High impedance I

CCA

Unselected

H X X X High impedance I

CCS

X L X X High impedance I

CCS

Parameter Symbol Conditions Ratings Unit

Maximum supply voltage V

max 4.6 V

Input pin voltage V

–0.3* to VCC+ 0.3 V

I/O pin voltage V

I/O

–0.3 to VCC+ 0.3 V Operating temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C

Specifications

Maximum Ratings at Ta = 25°C

Parameter Symbol Conditions

Ratings

Unit

min typ max

Input capacitance C

VIN= 0 V 6 10 pF

I/O capacitance C

I/OVI/O

= 0 V 6 10 pF

I/O Capacitances at Ta = 25°C, f = 1 MHz

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