Sanyo FTS1018 Specifications
Ordering number : ENN7005
FTS1018
P-Channel Silicon MOSFET
FTS1018
Load Switching Applications
Features
•
Low ON-resistance.
• 4V drive.
• Mounting height 1.1mm.
Package Dimensions
unit : mm
2147A
[FTS1018]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain
2 : Source
3 : Source
4 : Gate
0.125
5 : Drain
6 : Source
7 : Source
8 : Drain
SANYO : TSSOP8
Specifications
14
0.25
(0.95)
1.0
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --32 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1.3 W
--30 V
±20 V
--4 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--4A 4.6 6.5 S
Marking : S1018 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2945
No.7005-1/4
FTS1018
--6
--5
--4
--3
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
I
D
-- V
DS
V
GS
= --2.5V
--3.0V
--4.0V
--8.0V
--10.0V
--6.0V
--4.5V
0
--8
--7
--6
--5
--4
--3
--2
--1
0 --0.5 --1.0 --1.5 --2.0 --3.5--2.5 --3.0
I
D
-- V
GS
Ta=75°C
--25°C
140
120
80
40
100
60
20
0
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
RDS(on) -- V
GS
Ta=25°C
ID= --2A
--4A
0
RDS(on) -- Ta
140
120
80
40
100
60
20
--60 --40 --20 0 20 40 60 80 100 120 160140
I
D
= --2A, V
GS
= --4.0V
I
D
= --2A, V
GS
= --4.5V
I
D
= --4A, V
GS
= --10.0V
IT02537
IT02538
IT02539
IT02540
25°C
VDS= --10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Drain-to-Source V oltage, VDS -- V
Drain Current, I
D
-- A
Gate-to-Source V oltage, VGS -- V
Ambient Temperature, Ta -- °C
Gate-to-Source V oltage, VGS -- V
Drain Current, I
D
-- A
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--4A, VGS=--10V 46 60 mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 19 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 4 nC
Diode Forward Voltage V
RDS(on) 2 ID=--2A, VGS=--4.5V 76 107 mΩ
RDS(on) 3 ID=--2A, VGS=--4V 81 114 mΩ
See specified Test Circuit 60 ns
r
See specified Test Circuit 40 ns
f
SD
IS=--4A, VGS=0 --0.83 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit
V
IN
0V
--10V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
VDD= --15V
ID= --4A
RL=3.75Ω
D
S
V
OUT
FTS1018
No.7005-2/4
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