Sanyo FTS1018 Specifications

Page 1
Ordering number : ENN7005
FTS1018
P-Channel Silicon MOSFET
FTS1018
Load Switching Applications
Features
Low ON-resistance.
4V drive.
Mounting height 1.1mm.
Package Dimensions
unit : mm
2147A
[FTS1018]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain 2 : Source 3 : Source 4 : Gate
0.125
5 : Drain 6 : Source 7 : Source 8 : Drain
SANYO : TSSOP8
Specifications
14
0.25
(0.95)
1.0
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --32 A Mounted on a ceramic board (1000mm2✕0.8mm) 1.3 W
--30 V
±20 V
--4 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--4A 4.6 6.5 S
Marking : S1018 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
71001 TS IM TA-2945
No.7005-1/4
Page 2
FTS1018
--6
--5
--4
--3
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
I
D
-- V
DS
V
GS
= --2.5V
--3.0V
--4.0V
--8.0V
--10.0V
--6.0V
--4.5V
0
--8
--7
--6
--5
--4
--3
--2
--1
0 --0.5 --1.0 --1.5 --2.0 --3.5--2.5 --3.0
I
D
-- V
GS
Ta=75°C
--25°C
140
120
80
40
100
60
20
0
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
RDS(on) -- V
GS
Ta=25°C
ID= --2A
--4A
0
RDS(on) -- Ta
140
120
80
40
100
60
20
--60 --40 --20 0 20 40 60 80 100 120 160140
I
D
= --2A, V
GS
= --4.0V
I
D
= --2A, V
GS
= --4.5V
I
D
= --4A, V
GS
= --10.0V
IT02537
IT02538
IT02539
IT02540
25°C
VDS= --10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- m
Drain-to-Source V oltage, VDS -- V
Drain Current, I
D
-- A
Gate-to-Source V oltage, VGS -- V
Ambient Temperature, Ta -- °C
Gate-to-Source V oltage, VGS -- V
Drain Current, I
D
-- A
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--4A, VGS=--10V 46 60 m
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF Output Capacitance Coss VDS=--10V, f=1MHz 250 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 19 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 4 nC Diode Forward Voltage V
RDS(on) 2 ID=--2A, VGS=--4.5V 76 107 m RDS(on) 3 ID=--2A, VGS=--4V 81 114 m
See specified Test Circuit 60 ns
r
See specified Test Circuit 40 ns
f
SD
IS=--4A, VGS=0 --0.83 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit
V
IN
0V
--10V V
IN
PW=10µs D.C.1%
P.G
G
50
VDD= --15V
ID= --4A RL=3.75
D
S
V
OUT
FTS1018
No.7005-2/4
Page 3
Forward Transfer Admittance, yfs -- S
100
1.0
0.1
yfs -- I
7 5
3 2
10
7 5
3 2
7 5
3 2
23 57 23 57 23 57
--0.01
Ta= --25°C
--0.1 --1.0
D
25°C
75°C
Drain Current, ID -- A
10000
7 5
3 2
1000
7 5
3 2
100
7
Ciss, Coss, Crss -- pF
5 3
2
10
0 --10 --15--5 --20 --25
Ciss, Coss, Crss -- V
Drain-to-Source V oltage, V
SW Time -- I
td(off)
t
f
t
r
td(on)
Drain Current, I
--1.0 --10
P
-- Ta
D
D
Switching Time, SW Time -- ns
1000
100
1.0
1.5
7 5
3 2
7 5
3 2
10
7 5
3 2
--0.1
23 57 23 57
DS
D
-- A
VDS= --10V
DS
f=1MHz
Ciss
Coss
Crss
-- V
VDD= --15V VGS= --10V
FTS1018
--10
IT02541
--30
IT02543
IT02546
I
-- V
F
25°C
SD
--25°C
--10 7 5
3 2
--1.0 7 5
-- A F
3 2
--0.1 7 5
3 2
--0.01
Forward Current, I
7 5
3 2
--0.001 0 --0.2 --0.4 --0.6 --0.8 --1.0
Ta=75°C
Diode Forward V oltage, VSD -- V
--10
VDS= --10V
--9
ID= --4A
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1 0
0 5 10 15
VGS -- Qg
Total Gate Charge, Qg -- nC
--100 7
5
IDP= --32A
3 2
--10 7
ID= --4A
5
-- A
3
D
2
--1.0 7 5
3 2
Drain Current, I
--0.1 7 5
3 2
--0.01
--0.01
Operation in this area is limited by RDS(on).
Ta=25°C Single pulse Mounted on a ceramic board(1000mm2✕0.8mm)
23 57 23 57 7
--0.1
A S O
DC operation(Ta=25°C)
--1.0 --10
Drain-to-Source V oltage, V
VGS=0
IT02542
IT02544
<10µs
100µs
1ms
10ms
100ms
23 5 723 5
IT03276
-- V
DS
--1.4--1.2
20
--100
1.3
-- W D
1.0
0.5
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board(1000mm
2
0.8mm)
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03277
No.7005-3/4
Page 4
FTS1018
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.
No.7005-4/4
PS
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