Sanyo FTS1018 Specifications
FTS1018
No.7005-1/4
Features
•
Low ON-resistance.
• 4V drive.
• Mounting height 1.1mm.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7005
FTS1018
Package Dimensions
unit : mm
2147A
[FTS1018]
71001 TS IM TA-2945
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain
SANYO : TSSOP8
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
--30 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
--4 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% --32 A
Allowable Power Dissipation P
D
Mounted on a ceramic board (1000mm
2
✕0.8mm) 1.3 W
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
Electrical Characteristics at T a=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=--1mA, V
GS
=0 --30 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=--30V, V
GS
=0 --1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±16V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=--10V, I
D
=--1mA --1.0 --2.4 V
Forward Transfer Admittance
yfs
V
DS
=--10V, I
D
=--4A 4.6 6.5 S
Marking : S1018 Continued on next page.
FTS1018
No.7005-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
R
DS
(on) 1 I
D
=--4A, V
GS
=--10V 46 60 mΩ
Static Drain-to-Source On-State Resistance
R
DS
(on) 2 I
D
=--2A, V
GS
=--4.5V 76 107 mΩ
R
DS
(on) 3 I
D
=--2A, V
GS
=--4V 81 114 mΩ
Input Capacitance Ciss V
DS
=--10V, f=1MHz 1000 pF
Output Capacitance Coss V
DS
=--10V, f=1MHz 250 pF
Reverse Transfer Capacitance Crss V
DS
=--10V, f=1MHz 160 pF
Turn-ON Delay Time t
d
(on) See specified Test Circuit 10 ns
Rise Time t
r
See specified Test Circuit 60 ns
Turn-OFF Delay Time t
d
(off) See specified Test Circuit 55 ns
Fall Time t
f
See specified Test Circuit 40 ns
Total Gate Charge Qg V
DS
=--10V, V
GS
=--10V, I
D
=--4A 19 nC
Gate-to-Source Charge Qgs V
DS
=--10V, V
GS
=--10V, I
D
=--4A 2 nC
Gate-to-Drain “Miller” Charge Qgd V
DS
=--10V, V
GS
=--10V, I
D
=--4A 4 nC
Diode Forward Voltage V
SD
I
S
=--4A, V
GS
=0 --0.83 --1.5 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
0V
--10V
V
IN
P.G
50Ω
G
S
I
D
= --4A
R
L
=3.75Ω
V
DD
= --15V
V
OUT
FTS1018
V
IN
D
--6
--5
--4
--3
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
I
D
-- V
DS
V
GS
= --2.5V
--3.0V
--4.0V
--8.0V
--10.0V
--6.0V
--4.5V
0
--8
--7
--6
--5
--4
--3
--2
--1
0 --0.5 --1.0 --1.5 --2.0 --3.5--2.5 --3.0
I
D
-- V
GS
Ta=75°C
--25°C
140
120
80
40
100
60
20
0
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
R
DS
(on) -- V
GS
Ta=25°C
I
D
= --2A
--4A
0
R
DS
(on) -- Ta
140
120
80
40
100
60
20
--60 --40 --20 0 20 40 60 80 100 120 160140
I
D
= --2A, V
GS
= --4.0V
I
D
= --2A, V
GS
= --4.5V
I
D
= --4A, V
GS
= --10.0V
IT02537
IT02538
IT02539
IT02540
25°C
V
DS
= --10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Drain-to-Source V oltage, V
DS
-- V
Drain Current, I
D
-- A
Gate-to-Source V oltage, V
GS
-- V
Ambient Temperature, Ta -- °C
Gate-to-Source V oltage, V
GS
-- V
Drain Current, I
D
-- A
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