Sanyo FTS1012 Specifications

Ordering number : ENN7004

Features

•Low ON-resistance.

•4.0V drive.

•Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta=25°C

FTS1012

P-Channel Silicon MOSFET

FTS1012

Load Switching Applications

Package Dimensions

unit : mm

2147A

			[FTS1012]
	3.0	0.95	0.425
	0.65
	8	5
			0.5
		4.5	6.4
				1	: Drain
				2	: Source
	1	4		3	: Source
			0.125	4	: Gate
		(0.95)
	0.25			5	: Drain
				6	: Source
		1.0		7	: Source
				8	: Drain
		0.1		SANYO : TSSOP8

Parameter	Symbol	Conditions				Ratings			Unit
Drain-to-Source Voltage	VDSS						--30		V
Gate-to-Source Voltage	VGSS						±20		V
Drain Current (DC)	ID						--6		A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--32		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1000mm2 0.8mm)					1.3		W
Channel Temperature	Tch						150		°C
Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions				Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0		--30					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0						--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0						±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA		--1.0				--2.4	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--6A		8.7			12		S
Marking : S1012							Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71001 TS IM TA-2944 No.7004-1/4

FTS1012

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

RDS(on) 1

ID=--6A, VGS=--10V

21

28

mW

Static Drain-to-Source On-State Resistance

RDS(on) 2

ID=--4A, VGS=--4.5V

33

47

mW

RDS(on) 3

ID=--4A, VGS=--4V

37

52

mW

Input Capacitance

Ciss

VDS=--10V, f=1MHz

1700

pF

Output Capacitance

Coss

VDS=--10V, f=1MHz

380

pF

Reverse Transfer Capacitance

Crss

VDS=--10V, f=1MHz

240

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

15

ns

Rise Time

tr

See specified Test Circuit

130

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit

110

ns

Fall Time

tf

See specified Test Circuit

85

ns

Total Gate Charge

Qg

VDS=--10V, VGS=--10V, ID=--6A

32

nC

Gate-to-Source Charge

Qgs

VDS=--10V, VGS=--10V, ID=--6A

4.5

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--10V, VGS=--10V, ID=--6A

5

nC

Diode Forward Voltage

VSD

IS=--6A, VGS=0

--0.79

--1.5

V

Switching Time Test Circuit

VDD= --15V

0V

VIN

ID= --6A

--10V

VIN

RL=2.5Ω

D

VOUT

PW=10µs

D.C.≤ 1%

G

FTS1012

P.G

50Ω

S

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

ID -- VDS

--10
						.		. 5V			4	. 0V		.	5V
--9						6		4		--				3
						--	--						--								--		0V
--8			0V																			3.
			.
			10
--7			--
--6
--5
--4
																		V	GS= --			2.5V
--3
--2
--1
0
0		--0.1		--0.2			--0.3			--0.4 --0.5 --0.6 --0.7 --0.8											--0.9		--1.0
					Drain-to-Source Voltage, VDS													-- V			IT01577
80								RDS(on) -- VGS
																				Ta=25°C
70
60
50					--6A
		ID= --4A
40
30
20
10
0
0		--2		--4			--6			--8			--10 --12 --14					--16			--18		--20
					Gate-to-Source Voltage, VGS													-- V			IT01579

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

--12											ID -- VGS
	VDS= --				10V
--10
--8
																						C
--6																				°
																				Ta=75			C
--4																							°
																							25
																				°			--
--2																						C
																				25
0
0		--0.5					--1.0			--1.5				--2.0				--2.5						--3.0			--3.5
						Gate-to-Source Voltage, VGS -- V																			IT01578
80										RDS(on)						-- Ta
70
60
																								.0V
																							4
																			VGS		=		--
50
																	4A,
														=	--										5V
														ID					VGS
40
																			4A,						.0V
																							= --10
																		--6A,		VGS
30														I		=
														D
20
10
0
--60		--40 --20					0			20 40				60				80 100 120 140									160
							Ambient Temperature, Ta -- °C																		IT01580

No.7004-2/4