Sanyo FTS1011 Specifications

Ordering number : ENN7003

FTS1011

P-Channel Silicon MOSFET

FTS1011

Ultrahigh-Speed Switching Applications

Features

•Low ON-resistance.

•2.5V drive.

•Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2147A

			[FTS1011]
	3.0	0.95	0.425
	0.65
	8	5
			0.5
		4.5	6.4
				1	: Drain
				2	: Source
	1	4		3	: Source
			0.125	4	: Gate
		(0.95)
	0.25			5	: Drain
				6	: Source
		1.0		7	: Source
				8	: Drain
		0.1		SANYO : TSSOP8

Parameter	Symbol	Conditions				Ratings			Unit
Drain-to-Source Voltage	VDSS						--20		V
Gate-to-Source Voltage	VGSS						±10		V
Drain Current (DC)	ID						--6		A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--30		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1000mm2 0.8mm)					1.3		W
Channel Temperature	Tch						150		°C
Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions				Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0		--20					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--20V, VGS=0						--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0						±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA		--0.4				--1.4	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--6A		10.5			15		S
Marking : S1011							Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71001 TS IM TA-2474 No.7003-1/4

FTS1011

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Static Drain-to-Source On-State Resistance	RDS(on) 1	ID=--6A, VGS=--4V			25	33	mW
	RDS(on) 2	ID=--2A, VGS=--2.5V			36	51	mW
Input Capacitance	Ciss	VDS=--10V, f=1MHz			2100		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz			480		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz			320		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit			28		ns
Rise Time	tr	See specified Test Circuit			240		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit			93		ns
Fall Time	tf	See specified Test Circuit			130		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--6A			41		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--6A			4		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--6A			5		nC
Diode Forward Voltage	VSD	IS=--6A, VGS=0			--0.79	--1.5	V

Switching Time Test Circuit		VDD= --10V
VIN
0V			ID= --6A
--4V			RL=1.6Ω
	VIN	D	VOUT
PW=10µs
D.C.≤ 1%	G
P.G	50Ω		FTS1011
			S

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

--10												ID -- VDS
			0V					.	0V			5V
		.
											.
--9		4				--		3		2
		--		0V
--8			.										.0V
			6
		--											2
--7			0V										--
		.
		8
--6		--
--5
--4
																	V		= --	1.5V
--3
																	GS
--2
--1
0
0		--0.1			--0.2 --0.3							--0.4 --0.5 --0.6 --0.7					--0.8 --0.9 --1.0
					Drain-to-Source Voltage, VDS												-- V		IT02526
80								RDS(on) -- VGS
																			Ta=25°C
60
		ID= --2A					--6A
40

20

0

0	--2	--4	--6	--8	--10
	Gate-to-Source Voltage, VGS			-- V	IT02528

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

--10							ID -- VGS
--9																				VDS= --					10V
--8
--7
--6
--5
												°C
--4												25
												C
--3
											°				C
										Ta=75					°
--2														--	25
--1
0
0			--0.5			--1.0							--1.5						--2.0				--2.5
				Gate-to-Source Voltage, VGS -- V																			IT02527
80						RDS(on)							-- Ta
60
																	.5V
																2
													=--
										VGS
						I			2A,
40																	.0V
															= --4
						I =			--6A,			VGS
							D
20
0
--60 --40			--20 0			20 40 60 80 100													120				140 160
					Ambient Temperature, Ta -- °C																		IT02529
																				No.7003-2/4