Sanyo FTD2008 Specifications

FTD2008

No.7002-1/4

Features

•

Low ON-resistance.

• 4V drive.

• Mounting height 1.1mm.

• Composite type, facilitating high-density mounting.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7002

FTD2008

Package Dimensions

unit : mm

2155A

[FTD2008]

71001 TS IM TA-2229

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel Silicon MOSFET

DC / DC Converter Applications

1 : Drain1

2 : Source1

3 : Source1

4 : Gate1

5 : Gate2

6 : Source2

7 : Source2

8 : Drain2

SANYO : TSSOP8

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage V

DSS

60 V

Gate-to-Source Voltage V

GSS

±20 V

Drain Current (DC) I

D

1.5 A

Drain Current (Pulse) I

DP

PW≤10µs, duty cycle≤1% 6 A

Allowable Power Dissipation P

D

Mounted on a ceramic board (1000mm

2

✕0.8mm) 1unit

0.8 W

Total Dissipation P

T

Mounted on a ceramic board (1000mm

2

✕0.8mm)

1.0 W

Channel T emperature T ch 150 ° C

Storage T emperature Tstg --55 to +150 °C

Electrical Characteristics at T a=25°C

Ratings

Parameter Symbol Conditions

min typ max

Unit

Drain-to-Source Breakdown Voltage V

(BR)DSS

I

D

=1mA, V

GS

=0 60 V

Zero-Gate Voltage Drain Current I

DSS

V

DS

=60V , V

GS

=0 10 µA

Gate-to-Source Leakage Current I

GSS

V

GS

=±16V, V

DS

=0 ±10 µA

Cutoff Voltage V

GS

(off) V

DS

=10V, I

D

=1mA 1.0 2.4 V

Forward Transfer Admittance



yfs



V

DS

=10V, I

D

=0.8A 1.4 2.0 S

Marking : D2008 Continued on next page.

FTD2008

No.7002-2/4

Continued from preceding page.

Ratings

Parameter Symbol Conditions

min typ max

Unit

Static Drain-to-Source On-State Resistance

R

DS

(on)1 I

D

=0.8A, V

GS

=10V 240 320 mΩ

R

DS

(on)2 I

D

=0.8A, V

GS

=4V 320 440 mΩ

Input Capacitance Ciss V

DS

=20V , f=1MHz 110 pF

Output Capacitance Coss V

DS

=20V , f=1MHz 35 pF

Reverse Transfer Capacitance Crss V

DS

=20V , f=1MHz 10 pF

Turn-ON Delay Time t

d

(on) See specified Test Circuit 7 ns

Rise Time t

r

See specified Test Circuit 4 ns

Turn-OFF Delay Time t

d

(off) See specified Test Circuit 24 ns

Fall Time t

f

See specified Test Circuit 11 ns

Total Gate Charge Qg V

DS

=10V, V

GS

=10V, I

D

=1.5A 4.5 nC

Gate-to-Source Charge Qgs V

DS

=10V, V

GS

=10V, I

D

=1.5A 0.9 nC

Gate-to-Drain “Miller” Charge Qgd V

DS

=10V, V

GS

=10V, I

D

=1.5A 0.8 nC

Diode Forward Voltage V

SD

I

S

=1.5A, V

GS

=0 0.82 1.2 V

Switching Time Test Circuit Electrical Connection

PW=10µs

D.C.≤1%

10V

0V

V

IN

P.G

50Ω

G

S

I

D

=0.8A

R

L

=37.5Ω

V

DD

=30V

V

OUT

V

IN

D

600

400

500

300

200

100

160120 14010060 804020

0

--40 --20--60

0

600

500

200

300

0

100

4801220162 6 10 1814

0

0

3.0

2.5

2.0

1.5

1.0

0.5

1.0 2.5 4.03.5

1.50

1.00

1.25

0.75

0.50

0.25

0.40.2 0.6 0.8 1.21.0 1.6 1.8 2.0

IT03200

IT03201

IT03202 IT03203

0

0

1.4

400

0.5 3.02.01.5

I

D

-- V

DS

Drain-to-Source V oltage, V

DS

-- V

Drain Current, I

D

-- A

I

D

-- V

GS

Gate-to-Source V oltage, V

GS

-- V

R

DS

(on) -- V

GS

Static Drain-to-Source

On-State Resistance, R

DS

(on)

-- mΩ

Static Drain-to-Source

On-State Resistance, R

DS

(on)

-- mΩ

Ambient Temperature, Ta

-- °C

Drain Current, I

D

-- A

Gate-to-Source V oltage, V

GS

-- V

R

DS

(on) -- Ta

8.0V

6.0V

5.0V

Ta=25°C

I

D

=0.8A

V

GS

=2.5V

3.0V

I

D

=0.8A, V

GS

=4V

I

D

=0.8A, V

GS

=10V

V

DS

=10V

- -25°C

25°C

Ta=75°C

10.0V

3.5V

4.0V

D1 S1 S1 G1

D2 S2 S2 G2