Sanyo FTD2008 Specifications
Ordering number : ENN7002
FTD2008
N-Channel Silicon MOSFET
FTD2008
DC / DC Converter Applications
Features
•
Low ON-resistance.
• 4V drive.
• Mounting height 1.1mm.
• Composite type, facilitating high-density mounting.
Package Dimensions
unit : mm
2155A
[FTD2008]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain1
2 : Source1
3 : Source1
14
0.25
(0.95)
1.0
0.125
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
Specifications
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 6 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)
60 V
±20 V
1.5 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=0.8A 1.4 2.0 S
Marking : D2008 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2229
No.7002-1/4
FTD2008
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 110 pF
Output Capacitance Coss VDS=20V , f=1MHz 35 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 24 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.5A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.5A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.5A 0.8 nC
Diode Forward Voltage V
RDS(on)1 ID=0.8A, VGS=10V 240 320 mΩ
RDS(on)2 ID=0.8A, VGS=4V 320 440 mΩ
See specified Test Circuit 4 ns
r
See specified Test Circuit 11 ns
f
SD
IS=1.5A, VGS=0 0.82 1.2 V
Ratings
min typ max
Unit
Switching Time Test Circuit Electrical Connection
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
1.50
1.25
8.0V
P.G
4.0V
3.5V
I
D
50Ω
-- V
G
DS
VDD=30V
D
S
3.0V
ID=0.8A
RL=37.5Ω
V
OUT
3.0
VDS=10V
2.5
D2 S2 S2 G2
D1 S1 S1 G1
5.0V
1.00
0.75
0.50
0.25
10.0V
6.0V
-- A
2.0
D
1.5
=2.5V
V
GS
1.0
Drain Current, I
0.5
-- A
D
Drain Current, I
I
D
-- V
GS
25°C
Ta=75°C
- -25°C
0
0
600
500
-- mΩ
(on)
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0.40.2 0.6 0.8 1.21.0 1.6 1.8 2.0
Drain-to-Source V oltage, V
RDS(on) -- V
4801220162 6 10 1814
Gate-to-Source V oltage, V
DS
GS
GS
1.4
0
-- V
IT03200
Ta=25°C
0
600
1.0 2.5 4.03.5
0.5 3.02.01.5
Gate-to-Source V oltage, V
RDS(on) -- Ta
ID=0.8A
500
-- mΩ
(on)
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
IT03202 IT03203
-- V
--40 --20--60
=0.8A, V
I
D
=0.8A, V
I
D
0
Ambient Temperature, Ta -- °C
GS
GS
=4V
=10V
GS
-- V
No.7002-2/4
IT03201
160120 14010060 804020
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