Page 1
Ordering number : ENN7002
FTD2008
N-Channel Silicon MOSFET
FTD2008
DC / DC Converter Applications
Features
•
Low ON-resistance.
• 4V drive.
• Mounting height 1.1mm.
• Composite type, facilitating high-density mounting.
Package Dimensions
unit : mm
2155A
[FTD2008]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain1
2 : Source1
3 : Source1
14
0.25
(0.95)
1.0
0.125
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
Specifications
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 6 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)
60 V
±20 V
1.5 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=0.8A 1.4 2.0 S
Marking : D2008 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2229
No.7002-1/4
Page 2
FTD2008
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 110 pF
Output Capacitance Coss VDS=20V , f=1MHz 35 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 24 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.5A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.5A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.5A 0.8 nC
Diode Forward Voltage V
RDS(on)1 ID=0.8A, VGS=10V 240 320 mΩ
RDS(on)2 ID=0.8A, VGS=4V 320 440 mΩ
See specified Test Circuit 4 ns
r
See specified Test Circuit 11 ns
f
SD
IS=1.5A, VGS=0 0.82 1.2 V
Ratings
min typ max
Unit
Switching Time Test Circuit Electrical Connection
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
1.50
1.25
8.0V
P.G
4.0V
3.5V
I
D
50Ω
-- V
G
DS
VDD=30V
D
S
3.0V
ID=0.8A
RL=37.5Ω
V
OUT
3.0
VDS=10V
2.5
D2 S2 S2 G2
D1 S1 S1 G1
5.0V
1.00
0.75
0.50
0.25
10.0V
6.0V
-- A
2.0
D
1.5
=2.5V
V
GS
1.0
Drain Current, I
0.5
-- A
D
Drain Current, I
I
D
-- V
GS
25°C
Ta=75°C
- -25°C
0
0
600
500
-- mΩ
(on)
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0.40.2 0.6 0.8 1.21.0 1.6 1.8 2.0
Drain-to-Source V oltage, V
RDS(on) -- V
4801220162 6 10 1814
Gate-to-Source V oltage, V
DS
GS
GS
1.4
0
-- V
IT03200
Ta=25°C
0
600
1.0 2.5 4.03.5
0.5 3.02.01.5
Gate-to-Source V oltage, V
RDS(on) -- Ta
ID=0.8A
500
-- mΩ
(on)
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
IT03202 IT03203
-- V
--40 --20--60
=0.8A, V
I
D
=0.8A, V
I
D
0
Ambient Temperature, Ta -- °C
GS
GS
=4V
=10V
GS
-- V
No.7002-2/4
IT03201
160120 14010060 804020
Page 3
FTD2008
-- S
fs
y
5
VDS=10V
3
2
yfs -- I
D
25°C
1.0
7
5
3
2
Ta= --25°C
75°C
Forward Transfer Admittance,
0.1
100
Ciss, Coss, Crss -- pF
100
Switching Time, SW Time -- ns
1.0
-- W
23 57 23 57 23 5
Drain Current, I
5
3
2
Ciss, Coss, Crss -- V
D
1.00.10.01
-- A
DS
Ciss
7
5
3
2
10
7
5
3
0203010 5040 60
Drain-to-Source V oltage, V
7
5
3
2
10
7
5
3
2
0.1 1.0
1.2
1.0
Coss
Crss
SW Time -- I
t
(off)
d
t
f
t
r
Drain Current, I
P
-- Ta
D
t
(on)
d
-- A
D
D
DS
-- V
D
0.8
0.6
0.4
Total dissipation
1unit
f=1MHz
VDD=30V
VGS=10V
23 523 57
IT03204
IT03206
IT03208
I
-- V
F
25°C
--25°C
SD
SD
-- V
5
3
2
1.0
-- A
7
F
5
3
2
0.1
7
5
Forward Current, I
3
2
0.01
10
VDS=10V
9
ID=1.5A
8
-- V
7
GS
6
5
4
3
2
Gate-to-Source V oltage, V
1
0
Ta=75°C
0.7 0.8 0.90.5
Diode Forward V oltage, V
VGS -- Qg
1.5 4.53.52.50.5 3.0 4.02.01.00
Total Gate Charge, Qg -- nC
10
IDP=6A
7
5
3
2
ID=1.5A
1.0
-- A
7
D
5
3
2
Operation in this
area is limited by RDS(on).
0.1
7
Drain Current, I
5
Ta=25°C
3
2
Single pulse
Mounted on a ceramic board(1000mm2✕0.8mm)1unit
0.01
23 57 23 57 2357
0.1 1.0 10 100
Drain-to-Source V oltage, V
1.0
-- W
0.8
(FET1)
D
0.6
0.4
PD(FET1) -- PD(FET2)
Mounted on a ceramic board(1000mm
A S O
DC operation
100ms
DS
10ms
-- V
2
✕0.8mm)
≤10µs
1ms
VGS=0
1.00.6
IT03205
IT03207
100µs
IT03209
0.2
Allowable Power Dissipation, P
Mounted on a ceramic board(1000mm2✕0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03210
0.2
Allowable Power Dissipation, P
0
0 0.2 0.4 0.6 0.8 1.0
Allowable Power Dissipation, PD(FET2) -- W
IT03211
No.7002-3/4
Page 4
FTD2008
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject
to change without notice.
No.7002-4/4
PS
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