Sanyo FTD1015 Specifications

Ordering number : ENN7001
FTD1015
P-Channel Silicon MOSFET
FTD1015
Load Switching Applications
Features
Low ON-resistance.
4V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
Package Dimensions
unit : mm
2155A
[FTD1015]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain1 2 : Source1 3 : Source1
14
0.25
(0.95)
1.0
0.125
4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
SANYO : TSSOP8
Specifications
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D T
PW10µs, duty cycle1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit Mounted on a ceramic board (1000mm2✕0.8mm)
--30 V
±20 V
--3 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 3.5 5 S
Marking : D1015 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
71001 TS IM TA-2943
No.7001-1/4
FTD1015
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--3A, VGS=--10V 64 84 m
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 560 pF Output Capacitance Coss VDS=--10V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 60 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 12 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 2 nC Diode Forward Voltage V
RDS(on) 2 ID=--2A, VGS=--4.5V 94 132 m RDS(on) 3 ID=--2A, VGS=--4V 104 146 m
See specified Test Circuit 6 ns
r
See specified Test Circuit 57 ns
f
SD
IS=--3A, VGS=0 --0.82 --1.5 V
Ratings
min typ max
Unit
DS
--4.0V
VDD= --15V
D
--3.5V
DS
GS
ID= --3A RL=5
S
--3.0V
--2.5V
VGS= --2.0V
IT02844
-- V
Ta=25°C
V
OUT
FTD1015
D2 S2 S2 G2
D1 S1 S1 G1
--9
--8
--7
-- A
--6
D
--5
--4
--3
Drain Current, I
--2
--1 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
200
Switching Time Test Circuit Electrical Connection
V
IN
0V
--10V V
IN
PW=10µs
--6
--5
-- A
--4
D
--3
--2
Drain Current, I
--1
0
0 --0.2
200
D.C.1%
P.G
--6.0V
--10.0V
Drain-to-Source V oltage, V
RDS(on) -- V
G
50
I
-- V
D
--4.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
I
-- V
D
GS
Ta=75°C
25°C
°C
--25
RDS(on) -- Ta
GS
VDS= --10V
°C
--25
75°C
Ta=
-- V
25°C
IT02845
-- m
150
(on)
DS
100
ID= --2.0A
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
--3.0A
Gate-to-Source V oltage, V
GS
-- V
IT02846
-- m
150
(on)
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 160140
= --4.0V
GS
= --2.0A, V
I
= --3.0A, V
I
D
D
I
= --10.0V
GS
= --2.0A, V
D
Ambient Temperature, Ta -- °C
= --4.5V
GS
No.7001-2/4
IT02847
FTD1015
Forward Transfer Admittance, yfs -- S
100
1.0
0.1
yfs -- I
7 5
3 2
10
7 5
3 2
7 5
3 2
Ta= --25°C
75°C
--0.1--0.01 --1.0
25°C
D
VDS= --10V
35723 5723 57
2
Drain Current, ID -- A
Switching Time, SW Time -- ns
1000
100
1.0
--12
SW Time -- I
7 5
3 2
t
7 5
3 2
10
7 5
3 2
--0.1
t
f
23 57 23 57
d
t
r
--1.0
Drain Current, I
VGS -- Qg
(off)
t
d
(on)
D
D
VDD= --15V VGS= --10V
-- A
VDS= --10V ID= --3.0A
--10
-- V GS
--8
--6
--4
--2
Gate-to-Source V oltage, V
0
02468101214
Total Gate Charge, Qg -- nC
1.5
Mounted on a ceramic board(1000mm2✕0.8mm)
PD -- Ta
IT02848
IT02850
IT02852
--10
--10
I
-- V
F
25°C
SD
--25°C
--10 7 5
3 2
--1.0 7 5
-- A F
3 2
--0.1 7 5
3 2
--0.01
Forward Current, I
7 5
3 2
--0.001 0 --0.4--0.2 --0.6 --0.8 --1.2--1.0
Ta=75°C
Diode Forward V oltage, VSD -- V
1000
7 5
3 2
100
7 5
Ciss, Coss, Crss -- pF
3 2
10
0 --5 --10 --15 --20
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source V oltage, V
3
I
= --15A
2
DP
--10 7 5
I
= --3A
D
3
-- A
2
D
--1.0 7 5
3 2
--0.1
Drain Current, I
7 5
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board(1000mm2✕0.8mm)1unit
--0.01
--0.01
Operation in this area is limited by RDS(on).
23 57
--0.1
A S O
DC operation
23 57 2357 23 57
--1.0
Drain-to-Source V oltage, V
DS
-- V
DS
<10µs
10ms
100ms
--10 --100
DS
-- V
1ms
VGS=0
IT02849
f=1MHz
IT02851
100µs
IT03261
-- W D
1.0
0.8
0.5
Allowable Power Dissipation, P
0020 40
Total dissipation
1unit
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03262
No.7001-3/4
FTD1015
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.
No.7001-4/4
PS
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