Sanyo FTD1015 Specifications

Ordering number : ENN7001

FTD1015

P-Channel Silicon MOSFET

FTD1015

Load Switching Applications

Features

•

Low ON-resistance.

• 4V drive.

• Mounting height 1.1mm.

• Composite type, facilitating high-density mounting.

Package Dimensions

unit : mm

2155A

[FTD1015]

3.0

0.65

85

6.4

4.5 0.95

0.425

0.5

1 : Drain1
2 : Source1
3 : Source1

14

0.25

(0.95)

1.0

0.125

4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2

SANYO : TSSOP8

Specifications

0.1

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% --15 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)

--30 V

±20 V

--3 A

0.8 W

1.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--3A 3.5 5 S

Marking : D1015 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71001 TS IM TA-2943

No.7001-1/4

FTD1015

Continued from preceding page.

Parameter Symbol Conditions

RDS(on) 1 ID=--3A, VGS=--10V 64 84 mΩ

Static Drain-to-Source On-State Resistance

Input Capacitance Ciss VDS=--10V, f=1MHz 560 pF
Output Capacitance Coss VDS=--10V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 60 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 2 nC
Diode Forward Voltage V

RDS(on) 2 ID=--2A, VGS=--4.5V 94 132 mΩ
RDS(on) 3 ID=--2A, VGS=--4V 104 146 mΩ

See specified Test Circuit 6 ns

r

See specified Test Circuit 57 ns

f

SD

IS=--3A, VGS=0 --0.82 --1.5 V

Ratings

min typ max

Unit

DS

--4.0V

VDD= --15V

D

--3.5V

DS

GS

ID= --3A
RL=5Ω

S

--3.0V

--2.5V

VGS= --2.0V

IT02844

-- V

Ta=25°C

V

OUT

FTD1015

D2 S2 S2 G2

D1 S1 S1 G1

--9

--8

--7

-- A

--6

D

--5

--4

--3

Drain Current, I

--2

--1
0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

Gate-to-Source V oltage, V

200

Switching Time Test Circuit Electrical Connection

V

IN

0V

--10V
V

IN

PW=10µs

--6

--5

-- A

--4

D

--3

--2

Drain Current, I

--1

0

0 --0.2

200

D.C.≤1%

P.G

--6.0V

--10.0V

Drain-to-Source V oltage, V

RDS(on) -- V

G

50Ω

I

-- V

D

--4.5V

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

I

-- V

D

GS

Ta=75°C

25°C

°C

--25

RDS(on) -- Ta

GS

VDS= --10V

°C

--25

75°C

Ta=

-- V

25°C

IT02845

-- mΩ

150

(on)

DS

100

ID= --2.0A

50

Static Drain-to-Source

On-State Resistance, R

0

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

--3.0A

Gate-to-Source V oltage, V

GS

-- V

IT02846

-- mΩ

150

(on)

DS

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60

--40 --20 0 20 40 60 80 100 120 160140

= --4.0V

GS

= --2.0A, V

I

= --3.0A, V

I

D

D

I

= --10.0V

GS

= --2.0A, V

D

Ambient Temperature, Ta -- °C

= --4.5V

GS

No.7001-2/4

IT02847