Sanyo FTD1003 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6428
FTD1003
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D1003 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %16.5–A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01–=
1)no(IDV,A4.1–=
2)no(IDV,A7.0–=
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD1003]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
02–V
01±V
4.1–A
sgnitaR
8.0W
0.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1–=
0=02–V
SG
V,V02–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1–=4.0–4.1–V
D
A4.1–=1.23 S
D
V4–=532513mΩ
SG
V5.2–=043084mΩ
SG
zHM1=f,V01–=081Fp
zHM1=f,V01–=09Fp
zHM1=f,V01–=34Fp
30300TS (KOTO) TA-2500 No.6428–1/4
FTD1003
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
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egrahC"relliM"niarD-ot-etaGdgQ 5.1Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=--10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=--1.4A
RL=7.1Ω
V
OUT
)no(tiucriCtseTdeificepSeeS01sn
d
r
)ffo(tiucriCtseTdeificepSeeS082sn
d
f
V
I
DS
S
V,V01–=
SD
SG
V,A4.1–=
SG
tiucriCtseTdeificepSeeS083sn
tiucriCtseTdeificepSeeS013sn
I,V01–=
A4.1–=
D
0=38.0–2.1–V
D2S2 S2 G2
sgnitaR
nimpytxam
5.9Cn
tinU
P.G
--1.8
--1.6
--1.4
--8.0V
--1.2
–A
D
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
50Ω
--6.0V
--10.0V
--0.2
Drain-to-Source Voltage, VDS –V
1000
900
mΩ
800
–
700
(on)
600
DS
500
ID=--0.7A
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
--1.4A
Gate-to-Source Voltage, VGS –V
FTD1003
S
I
-- V
D
--4.0V
--3.0V
DS
--2.0V
--2.5V
VGS=--1.5V
--0.4 --0.6 --0.8--0.1 --0.3 --0.5 --0.7 --0.9
IT00965
GS
Ta=25°C
--7 --8 --9 --10
IT00967
D1S1 S1 G1
I
-- V
--3.0
--2.5
--2.0
–A
D
--1.5
--1.0
D
VDS=--10V
GS
°C
Ta=--25
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Gate-to-Source Voltage, VGS –V
600
500
mΩ
–
400
(on)
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 40--40 --20 12020 60 80 100 1601400
RDS(on) -- Ta
=- -2.5V
GS
=- -0.7A, V
I
D
=- -4.0V
=- -1.4A, V
I
D
Ambient Temperature, Ta – °C
GS
75
25°C
°C
IT00966
IT00968
No.6428-2/4
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