Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6428
FTD1003
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D1003 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %16.5–A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01–=
1)no(IDV,A4.1–=
2)no(IDV,A7.0–=
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD1003]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
02–V
01±V
4.1–A
sgnitaR
8.0W
0.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1–=
0=02–V
SG
V,V02–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1–=4.0–4.1–V
D
A4.1–=1.23 S
D
V4–=532513mΩ
SG
V5.2–=043084mΩ
SG
zHM1=f,V01–=081Fp
zHM1=f,V01–=09Fp
zHM1=f,V01–=34Fp
30300TS (KOTO) TA-2500 No.6428–1/4
FTD1003
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 1Cn
egrahC"relliM"niarD-ot-etaGdgQ 5.1Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=--10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=--1.4A
RL=7.1Ω
V
OUT
)no(tiucriCtseTdeificepSeeS01sn
d
r
)ffo(tiucriCtseTdeificepSeeS082sn
d
f
V
I
DS
S
V,V01–=
SD
SG
V,A4.1–=
SG
tiucriCtseTdeificepSeeS083sn
tiucriCtseTdeificepSeeS013sn
I,V01–=
A4.1–=
D
0=38.0–2.1–V
D2S2 S2 G2
sgnitaR
nimpytxam
5.9Cn
tinU
P.G
--1.8
--1.6
--1.4
--8.0V
--1.2
–A
D
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
50Ω
--6.0V
--10.0V
--0.2
Drain-to-Source Voltage, VDS –V
1000
900
mΩ
800
–
700
(on)
600
DS
500
ID=--0.7A
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
--1.4A
Gate-to-Source Voltage, VGS –V
FTD1003
S
I
-- V
D
--4.0V
--3.0V
DS
--2.0V
--2.5V
VGS=--1.5V
--0.4 --0.6 --0.8--0.1 --0.3 --0.5 --0.7 --0.9
IT00965
GS
Ta=25°C
--7 --8 --9 --10
IT00967
D1S1 S1 G1
I
-- V
--3.0
--2.5
--2.0
–A
D
--1.5
--1.0
D
VDS=--10V
GS
°C
Ta=--25
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Gate-to-Source Voltage, VGS –V
600
500
mΩ
–
400
(on)
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 40--40 --20 12020 60 80 100 1601400
RDS(on) -- Ta
=- -2.5V
GS
=- -0.7A, V
I
D
=- -4.0V
=- -1.4A, V
I
D
Ambient Temperature, Ta – °C
GS
75
25°C
°C
IT00966
IT00968
No.6428-2/4
10
7
5
|–S
fs
3
2
1.0
7
5
3
2
yfs -- I
°C
Ta=--25
75°C
Forward Transfer Admittance, | y
0.1
--0.01
100
7
5
3
2
10
7
5
3
Switching Time, SW Time – ns
2
23 57
VDD=--10V
VGS=--4V
t
f
23 57 23 57
--0.1
Drain Current, ID–A
SW Time -- I
t
(off)
d
FTD1003
I
-- V
F
--25
°C
Ciss
Coss
Crss
SD
DS
V
GS
IT00970
f=1MHz
= 0
D
VDS=--10V
25°C
--1.0
--10
IT00969
D
t
r
td(on)
--10
7
5
3
2
--1.0
7
–A
5
F
3
2
--0.1
7
5
3
2
--0.01
Forward Current, I
7
5
3
2
--0.001
--0.2 --0.4--0.3 --0.5 --0.7 --0.9 --1.1--0.6 --0.8 --1.0 --1.2
1000
7
5
3
2
100
7
5
Ciss, Coss, Crss – pF
3
2
°C
°C
Ta=75
25
Diode Forward Voltage, VSD–V
Ciss, Coss, Crss -- V
1.0
--0.1 --1.0
--10
VDS=--10V
--9
ID=--1.4A
--8
–V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source Voltage, V
--1
0
0
1.2
1.0
–W
23 57 23
Drain Current, ID–A
VGS -- Qg
Total Gate Charge, Qg – nC
P
-- Ta
D
Mounted on a ceramic board (1000mm2×0.8mm)
D
0.8
0.6
0.4
Total Dissipation
1 unit
IT00971
IT00973
010--2
--10
IDP=--5.6A
7
5
3
2
ID=--1.4A
–A
--1.0
7
D
5
3
Operation inthis area is
2
limited by RDS(on).
--0.1
7
Drain Current, I
5
Ta=25°C
3
Single pulse
2
1 unit
Mounted on a ceramic board (1000mm2×0.8mm)
106824 95713
--0.01
--0.1 --1.0 --10
1.0
--4 --6
Drain-to-Source Voltage, VDS–V
--8 --20--10 --12 --14 --16 --18
A S O
100ms
DC operation
23 57 23 2357
Drain-to-Source Voltage, VDS–V
PD(FET1) -- PD(FET2)
1ms
10ms
IT00972
100µs
5
IT00974
–W
D
0.8
0.6
0.4
Mounted on a ceramic board (1000mm
2
×0.8mm)
0.2
Allowable Power Dissipation, P
0020 40
60
Ambient Temperature, Ta – °C
80 100 120
140 160
IT00975
0.2
0
Allowable Power Dissipation (FET1), P
0
0.2 0.4
0.6
Allowable Power Dissipation (FET2), PD–W
0.8 1.0
IT00976
No.6428-3/4
FTD1003
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6428-4/4
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