Sanyo FTD1003 Specifications

Ordering number:ENN6428

P-Channel Silicon MOSFET

FTD1003

Load Switching Applications

Features

·Low ON resistance.

·2.5V drive.

·Mounting height 1.1mm.

·Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2155A

[FTD1003]

3.0	0.95	0.425
0.65
8	5
		0.5
	4.5	6.4
			1	: Drain1
			2	: Source1
1	4	0.125	3	: Source1
	(0.95)		4	: Gate1
0.25
			5	: Gate2
	1.0		6	: Source2
			7	: Source2
			8	: Drain2
	0.1		SANYO : TSSOP8

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		–20	V
Gate-to-Source Voltage	VGSS		±10	V
Drain Current (DC)	ID		–1.4	A
Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%	–5.6	A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1000mm2×0.8mm) 1unit	0.8	W
Total Dissipation	PT	Mounted on a ceramic board (1000mm2×0.8mm)	1.0	W
Channel Temperature	Tch		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=–1mA, VGS=0	–20			V
Zero-Gate Voltage Drain Current	IDSS	VDS=–20V, VGS=0			–10	µA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0			±10	µA
Cutoff Voltage	VGS(off)	VDS=–10V, ID=–1mA	–0.4		–1.4	V
Forward Transfer Admittance	| yfs |	VDS=–10V, ID=–1.4A	2.1	3		S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=–1.4A, VGS=–4V		235	315	mΩ
	RDS(on)2	ID=–0.7A, VGS=–2.5V		340	480	mΩ
Input Capacitance	Ciss	VDS=–10V, f=1MHz		180		pF
Output Capacitance	Coss	VDS=–10V, f=1MHz		90		pF
Reverse Transfer Capacitance	Crss	VDS=–10V, f=1MHz		43		pF
Marking : D1003				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30300TS (KOTO) TA-2500 No.6428–1/4

FTD1003

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Turn-ON Delay Time	td(on)	See Specified Test Circuit		10		ns
Rise Time	tr	See Specified Test Circuit		380		ns
Turn-OFF Delay Time	td(off)	See Specified Test Circuit		280		ns
Fall Time	tf	See Specified Test Circuit		310		ns
Total Gate Charge	Qg			9.5		nC
Gate-to-Source Charge	Qgs	VDS=–10V, VGS=–10V, ID=–1.4A		1		nC
Gate-to-Drain "Miller" Charge	Qgd			1.5		nC
Diode Forward Voltage	VSD	IS=–1.4A, VGS=0		–0.83	–1.2	V

Switching Time Test Circuit

Electrical Connection

VDD=--10V

VIN

D2S2 S2 G2

0V

ID=--1.4A

--4V

VIN

RL=7.1Ω

D

VOUT

PW=10µs

D.C.≤ 1%

G

P.G

50Ω

S

FTD1003

D1 S1 S1 G1

	--1.8					ID -- VDS
	--1.6		--6.0V
A	--1.4					.	0V		. 0V
												.0V
		--8.0V				4
–					--			3			--2
	--1.2						--		.5V
D									2
				0V					--
I	--1.0
Current,			.
	--0.8	--	10
Drain	--0.6
											VGS=--1.5V
	--0.4
	--0.2
	0
	0	--0.1		--0.2	--0.3		--0.4 --0.5 --0.6			--0.7		--0.8	--0.9
				Drain-to-Source Voltage, VDS						–	V	IT00965

RDS(on) -- VGS

		1000
																	Ta=25°C
	mΩ	900
		800
	–
	(on)	700
	DS	600
Source-to-DrainStatic	Resistance,State-OnR							--1.4A
		500
		400		ID=--	0.7A
		300
		200
		100
		0
		0		--1 --2 --3 --4 --5 --6 --7											--8		--9 --10
					Gate-to-Source Voltage, VGS –										V		IT00967

	--3.0								ID -- VGS
		VDS=--10V
																										C
																										°
	--2.5																			C						25
																			°
A																	Ta=	--	25				C
–
	--2.0																				°
D																					75
I
Current,	--1.5
Drain	--1.0
	--0.5
	0
	0		--0.5				--1.0					--1.5					--2.0							--2.5			--3.0
					Gate-to-Source Voltage, VGS																	–		V			IT00966
	600							RDS(on)							-- Ta
mΩ	500
–																		.5V
(on)															--		2
	400														=
														VGS
DS												.	7A,
											0
										--
									=
Source-to-DrainStatic Resistance,State-OnR								ID											.0V
																		4
																--
	300														=
												.		VGS
													4A,
											1
										--
								I =
									D
	200
	100
	0
	--60		--40 --20				0 20					40 60			80					100				120			140 160
						Ambient Temperature, Ta														–		°C					IT00968

No.6428-2/4