Sanyo FP402 Specifications
Ordering number:ENN5048
4.5
4.25max
N-Channel MOS Silicon FET
FP402
Ultrahigh-Speed Switching Applicaitons
Features
· Low ON resistance.
· Very high-speed switching.
· Complex type with 2 low-voltage-drive N-channel
MOSFETs facilitating high-density mounting.
Electrical Connection
76
24
135
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDrewoPlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD
SSG
D
PD
P
D
P
D
T
Package Dimensions
unit:mm
2102A
0.5
0.5
6
2.5
1.0
4
5
3
1.75
PW≤10µs, duty cycle ≤1%
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm
Mounted on ceramic board (250mm
3.4
2.8
0.5
1.8
7
1.0
2
1
1.75
3.5
1.2
2
×0.8mm) 1 unit
2
×0.8mm)
0.3
0.7
1.57
0.5
[FP402]
0.2min
1.5
0.4
1:Gate
2:Drain
0 to 0.1
0.2
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
SANYO:PCP5
(Bottom view)
02V
51±V
1A
4A
0.2W
8.0W
1.1W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72301TN(KT)/52098HA (KT)/41095TS (KOTO) TA-0099 No.5048-1/4
FP402
Electrical Characteristics at T a=25˚C
retemaraPlobmySsnotidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
Marking:402
Switching Time Test Circuit
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
0=02V
SG
V,V02=
0=001Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01=
Am1=8.00.2V
D
Am005=6.00.1S
D
V,Am005=
V01=053084mΩ
SG
V,Am005=
V4=055057mΩ
SG
zHM1=f,V01=05Fp
zHM1=f,V01=54Fp
zHM1=f,V01=51Fp
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS02sn
V,A1=
0=0.1V
SG
sgnitaR
nimpytxam
tinU
VDD=10V
V
10V
0V
PW=10µs
D.C.≤1%
P.G
1.0
0.8
IN
4.0V
V
IN
50Ω
3.5V
3.0V
2.8V
I
D
ID=500mA
RL=20Ω
-- V
DS
V
OUT
10.0V
-- A
D
0.6
2.6V
2.4V
0.4
Drain Current, I
0.2
0
012345
Drain-to-Source Voltage, VDS–V
2.2V
2.0V
V
GS
=1.8V
ITR11135
2.0
VDS=10V
1.8
1.6
1.4
-- A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
012345
ID -- V
Gate-to-Source Voltage, VGS–V
GS
Ta= --25°C
25°C
75°C
ITR11136
No.5048-2/4
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