Sanyo FP402 Specifications

Ordering number:ENN5048

4.5

4.25max

N-Channel MOS Silicon FET

FP402

Ultrahigh-Speed Switching Applicaitons

Features

· Low ON resistance.

· Very high-speed switching.

· Complex type with 2 low-voltage-drive N-channel
MOSFETs facilitating high-density mounting.

Electrical Connection

76

24

135

1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain

(Top view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)esluP(tnerruCniarDI

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erutarepmeTegarotSgtsT 051+ot55–

SSD
SSG

D

PD

P

D

P

D
T

Package Dimensions

unit:mm

2102A

0.5

0.5

6

2.5

1.0

4

5

3

1.75

PW≤10µs, duty cycle ≤1%
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm
Mounted on ceramic board (250mm

3.4

2.8

0.5

1.8

7

1.0

2

1

1.75

3.5

1.2

2

×0.8mm) 1 unit

2

×0.8mm)

0.3

0.7

1.57

0.5

[FP402]

0.2min

1.5

0.4

1:Gate
2:Drain

0 to 0.1

0.2

3:Source
4:Drain
5:Gate
6:Drain
7:Drain

SANYO:PCP5
(Bottom view)

02V
51±V
1A
4A

0.2W

8.0W

1.1W

˚C
˚C

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72301TN(KT)/52098HA (KT)/41095TS (KOTO) TA-0099 No.5048-1/4

FP402

Electrical Characteristics at T a=25˚C

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ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=

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R

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Marking:402

Switching Time Test Circuit

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

r

f

DS

SD

V

SG

V

)ffo(SG

SD

I

)no(SD

D

I

)no(SD

D

SD
SD
SD

)no(d

)ffo(d

I

S

0=02V

SG

V,V02=

0=001Aµ

SG

V,V21±=

0=01±Aµ

SD

I,V01=

Am1=8.00.2V

D

Am005=6.00.1S

D
V,Am005=

V01=053084mΩ

SG

V,Am005=

V4=055057mΩ

SG

zHM1=f,V01=05Fp
zHM1=f,V01=54Fp
zHM1=f,V01=51Fp

tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS02sn

V,A1=

0=0.1V

SG

sgnitaR

nimpytxam

tinU

VDD=10V

V

10V

0V

PW=10µs
D.C.≤1%

P.G

1.0

0.8

IN

4.0V

V

IN

50Ω

3.5V

3.0V

2.8V

I

D

ID=500mA

RL=20Ω

-- V

DS

V

OUT

10.0V

-- A
D

0.6

2.6V

2.4V

0.4

Drain Current, I

0.2

0

012345

Drain-to-Source Voltage, VDS–V

2.2V

2.0V

V

GS

=1.8V

ITR11135

2.0

VDS=10V

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

012345

ID -- V

Gate-to-Source Voltage, VGS–V

GS

Ta= --25°C

25°C

75°C

ITR11136

No.5048-2/4

fs -- S

y

1.0

FP402

3
2

7
5

3
2

yfs -- I

Ta= --25

25°C

D

VDS=10V

°C

°C

75

1.4

1.2

1.0

(on) -- Ω

DS

0.8

0.6

0.4

RDS(on) -- V

GS

ID=500mA

0.1
7

Forward Transfer Admittance,

5

7

1.0

0.8

0.01

23 57

Drain Current,I

RDS(on) -- Tc

0.1

23

-- A

D

(on) -- Ω

DS

0.6

0.4

0.2

Static Drain-to-Source

ON-State Resistance,R

0

--60 --40 --20 0 20 40 60 80 100 120 140

=4V

V

GS

=10V

V

GS

Case Temperature,Tc -- °C

7
5

3

2

10

7
5

SW Time -- I

t

d

t

(off)

f

t

r

t

d

D

(on)

Switching Time,SW Time -- ns

3

2

7

0.1 1.0

1.2

23 57 23

Drain Current,I

P

D

D

-- Ta

-- mA

1.0

ITR11137

ID=500mA

VDD=10V
VGS=10V

2357

ITR11139

ITR11141

0.2

Static Drain-to-Source

On-State Resistance,R

0

0246810121416

Gate-to-Source Voltage, VGS–V

3
2

100

7
5

3
2

Ciss, Coss, Crss -- V

Ciss, Coss, Crss -- pF

10

7
5

2 4 6 8 10 12 14 16 18 200

Drain-to-Source Voltage,VDS–V

7
5

I

DP

3
2

I

-- A

D

D

1.0
7

Operation in this area

5

is limited by RDS(on).

3

2

Drain Current, I

1unit

0.1

Tc=25°C

7

Single pulse

5

57 5723 23

1.0 10

A S O

DC operation

Drain-to-Source Voltage, VDS–V

1.0

PD(FET2) -- PD(FET1)

DS

1ms

10ms

ITR11138

f=1MHz

Ciss

Coss

Crss

10µs

100

µs

ITR11140

ITR11142

1.0

–W

D

0.8

0.6

0.4

0.2

Mounted on a ceramic board

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

(250mm

2

×0.8mm)

Total Power Dissipation

1 unit

Ambient Temperature, Ta – °C

ITR11143

0.8

(FET2) -- W

D

0.6

0.4

0.2

Total
Mounted on a ceramic board

2

(250mm

0

Allowable Power Dissipation, P

0 0.2 0.4 0.6 0.8 1.0

×0.8mm)

Allowable Power Dissipation, PD(FET1) -- W

ITR11144

No.5048-3/4

FP402

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2001. Specifications and information herein are subject to
change without notice.

PS No.5048-4/4