Sanyo FP402 Specifications
Ordering number:ENN5048
N-Channel MOS Silicon FET
FP402
Ultrahigh-Speed Switching Applicaitons
Features
·Low ON resistance.
·Very high-speed switching.
·Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting.
Electrical Connection |
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7 |
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6 |
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1:Gate |
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2:Drain |
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3:Source |
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4:Drain |
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5:Gate |
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6:Drain |
1 |
2 |
3 |
4 |
5 |
7:Drain |
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(Top view) |
Package Dimensions |
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unit:mm |
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2102A |
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[FP402] |
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4.5 |
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3.4 |
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2.8 |
0.5 |
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1.5 |
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0.5 |
0.5 |
1.8 |
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0.4 |
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6 |
1.0 |
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7 |
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1.02.5 |
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4.25max |
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0.5 1.57 |
0.2min |
1:Gate |
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2:Drain |
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5 |
4 |
2 |
1 |
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3:Source |
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3 |
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0.3 |
0 to 0.1 |
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1.75 |
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0.2 |
4:Drain |
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1.75 |
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5:Gate |
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3.5 |
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6:Drain |
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1.2 |
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7:Drain |
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0.7 |
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SANYO:PCP5 |
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(Bottom view) |
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Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Drain-to-Source Voltage |
VDSS |
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20 |
V |
Gate-to-Source Voltage |
VGSS |
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±15 |
V |
Drain Current (DC) |
ID |
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1 |
A |
Drain Current (Pulse) |
IDP |
PW≤10µs, duty cycle ≤1% |
4 |
A |
Allowable Power Dissipation |
PD |
Tc=25˚C, 1 unit |
2.0 |
W |
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PD |
Mounted on ceramic board (250mm2×0.8mm) 1 unit |
0.8 |
W |
Total Power Dissipation |
PT |
Mounted on ceramic board (250mm2×0.8mm) |
1.1 |
W |
Channel Temperature |
Tch |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72301TN(KT)/52098HA (KT)/41095TS (KOTO) TA-0099 No.5048-1/4
FP402
Electrical Characteristics at Ta=25˚C
Parameter |
Symbol |
Conditons |
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Ratings |
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Unit |
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min |
typ |
max |
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D-S Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
20 |
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V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=20V, VGS=0 |
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100 |
µA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±12V, VDS=0 |
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±10 |
µA |
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
0.8 |
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2.0 |
V |
Forward Transfer Admittance |
| Yfs | |
VDS=10V, ID=500mA |
0.6 |
1.0 |
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S |
Static Drain-to-Source ON-State Resistance |
RDS(on) |
ID=500mA, VGS=10V |
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350 |
480 |
mΩ |
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RDS(on) |
ID=500mA, VGS=4V |
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550 |
750 |
mΩ |
Input Capacitance |
Ciss |
VDS=10V, f=1MHz |
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50 |
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pF |
Output Capacitance |
Coss |
VDS=10V, f=1MHz |
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45 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=10V, f=1MHz |
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15 |
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pF |
Turn-ON Delay Time |
td(on) |
See specified Test Circuit |
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8 |
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ns |
Rise Time |
tr |
See specified Test Circuit |
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10 |
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ns |
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit |
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30 |
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ns |
Fall Time |
tf |
See specified Test Circuit |
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20 |
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ns |
Diode Forward Voltage |
VSD |
IS=1A, VGS=0 |
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1.0 |
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V |
Marking:402
Switching Time Test Circuit
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VDD=10V |
VIN |
ID=500mA |
10V |
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0V |
RL=20Ω |
VIN |
VOUT |
PW=10µs |
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D.C.≤ 1% |
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P.G |
50Ω |
Drain Current, ID -- A
1.0
0.8
0.6
0.4
0.2
0
0
0V . 4
0V . 10
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ID -- VDS |
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3 |
. |
5V |
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0V |
8V |
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3 |
. |
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2. |
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2.6V |
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2.4V |
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2.2V |
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2.0V |
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V |
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=1.8V |
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GS |
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1 |
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2 |
3 |
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4 |
5 |
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Drain-to-Source Voltage, VDS |
– V |
ITR11135 |
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Drain Current, ID -- A
2.0 |
ID -- VGS |
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VDS=10V |
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1.8 |
C |
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° |
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1.6 |
25 |
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-- |
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1.4 |
Ta= |
75 |
° |
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1.2 |
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1.0
0.8
0.6
0.4
0.2
0
0 |
1 |
2 |
3 |
Gate-to-Source Voltage, VGS
25 |
° |
C |
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C
45
–V ITR11136
No.5048-2/4
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