Sanyo FP303 Specifications

Ordering number:ENN4657

TR:NPN Epitaxial Planar Silicon Transistor

SBD:Schottky Barrier Diode

FP303

DC-DC Converter Applications

Features	Package Dimensions
· Composite type with NPN transistor and Schottoky	unit:mm
barrier diode facilitates high-density mounting.	2099A
· The FP303 is composed of chips equivalent to the
									[FP303]
2SD1623 and SB05-05CP, which are placed in one
					4.5
package.
					3.4
					2.8	0.5			1.5
		0.5	0.5		1.8
									0.4
			6		1.0		7
	4.25max	1.02.5						0.5 1.57	0.2min	1:Base
				4		2	1			2:Collector
			5							3:Emitter
				3				0.3	0 to 0.1
		1.75							0.2	4:Cathode
						1.75
										5:Anode
					3.5
										6:Cathode
							1.2
										7:Collector
								0.7		SANYO:PCP5
										(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
[TR]
Collector-to-Base Voltage	VCBO		60	V
Collector-to-Emitter Voltage	VCEO		50	V
Emitter-to-Base Voltage	VEBO		6	V
Collector Current	IC		2	A
Collector Current (Pulse)	ICP		4	A
Base Current	IB		400	mA
Collector Dissipation	PC	Mounted on ceramic board (250mm2×0.8mm)	0.8	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C
[SBD]
Repetitive Peak Reverse Voltage	VRRM		50	V
Non-repetitive Peak Reverse Surge Voltage	VRSM		55	V
Average Rectified Current	IO		500	mA
Surge Forward Current	IFSM	50Hz sine wave, 1 cycle	5	A
Junction Temperature	Tj		–55 to +125	˚C
Storage Temperature	Tstg		–55 to +125	˚C

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72701TN(KT)/52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/5

FP303

Electrical Connection

			7						6					1:Base
														2:Collector
														3:Emitter Common
														4:Cathode
														5:Anode
			2					4						6:Cathode
1			3								5			7:Collector

(Top View)

Electrical Characteristics at Ta=25˚C

Parameter	Symbol	Conditons		Ratings		Unit
			min	typ	max
[TR]
Collector Cutoff Current	ICBO	VCB=50V, IE=0			0.1	µA
Emitter Cutoff Current	IEBO	VEB=4V, IC=0			0.1	µA
DC Current Gain	hFE1	VCE=2V, IC=100mA	140		560
	hFE2	VCE=2V, IC=1.5A	40
Gain-Bandwidth Product	fT	VCE=10V, IC=50mA		150		MHz
Output Capacitance	Cob	VCE=10V, f=1MHz		12		pF
C-E Saturation Voltage	VCE(sat)	IC=1.0A, IB=50mA		0.15	0.4	V
B-E Saturation Voltage	VBE(sat)	IC=1.0A, IB=50mA		0.9	1.2	V
C-B Breakdown Voltage	V(BR)CBO	IC=10µA, IE=0	60			V
C-E Breakdown Voltage	V(BR)CEO	IC=1mA, RBE=∞	50			V
E-B Breakdown Voltage	V(BR)EBO	IE=10µA, IC=0	6			V
Turn-ON Time	ton	See specified Test Circuit		60		ns
Storage Time	tstg	See specified Test Circuit		550		ns
Fall Time	tf	See specified Test Circuit		30		ns
[SBD]
Reverse Voltage	VR	IR=200µA	50			V
Forward Voltage	VF	IF=500mA			0.55	V
Reverse Current	IR	VR=25V			50	µA
Interterminal Capacitance	C	VR=10V, f=1MHz		22		pF
Reverse Recovery Time	trr	IF=IR=100mA, See sepcified Test Circuit.			10	ns
Thermal Resistance	Rthj-a	Mounted on ceramic board (250mm2×0.8mm)		170		˚C/W

Marking:303

Switching Time Test Circuit

[TR]

[SBD]

PW=20µs

D.C.≤ 1%

INPUT

VR

50Ω

IB1		Duty≤ 10%
	OUTPUT
IB2
RB	RL	50Ω	100Ω	10Ω
	50Ω

			10µs
	+	+	--5V
	100µF	470µF

VBE= --5V VCC=25V

100mA
							10mA
100mA

trr

10IB1= --10IB2=IC=500mA

No.4657-2/5