Sanyo FP205 Specifications
Ordering number:EN4494
FP205
PNP/NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
Features |
Package Dimensions |
·Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting.
·The FP205 is composed of 2 chips, one being equivalent to the 2SA1416 and the other 2SC3646, which are placed in one package.
Electrical Connection |
1:Base |
|
2:Collector |
|
3:Emitter Common |
|
4:Collector |
|
5:Base |
|
6:Collector |
|
7:Collector |
|
(Top view) |
Specifications
Absolute Maximum Ratings at Ta = 25˚C
unit:mm
2097A
[FP205]
1:Base
2:Collector 3:Emitter Common 4:Collector 5:Base
6:Collector
7:Collector
SANYO:PCP5 (Bottom view)
( ) : PNP
|
Parameter |
Symbol |
Conditions |
|
|
Ratings |
Unit |
|
|
|
|
|
|
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
|
|
|
(–)120 |
V |
|
Collector-to-Emitter Voltage |
VCEO |
|
|
|
|
(–)100 |
V |
|
Emitter-to-Base Voltage |
VEBO |
|
|
|
|
(–)6 |
V |
|
Collector Current |
IC |
|
|
|
|
(–)1 |
A |
|
Collector Current (Pulse) |
ICP |
|
|
|
|
(–)2 |
A |
|
Base Current |
IB |
|
|
|
|
(–)0.2 |
A |
|
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2×0.8mm) 1unit |
|
|
|
0.8 |
W |
|
Total Power Dissipation |
PT |
Mounted on ceramic board (250mm2×0.8mm) |
|
|
|
1.1 |
W |
|
Junction Temperature |
Tj |
|
|
|
|
150 |
˚C |
|
|
|
|
|
|
|
|
|
|
Storage Temperature |
Tstg |
|
|
|
–55 to +150 |
˚C |
|
|
|
|
|
|
|
|
|
|
|
Electrical Characteristics at Ta=25˚C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Parameter |
Symbol |
Conditons |
|
|
Ratings |
|
Unit |
|
|
|
|
|
||||
|
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)100V, IE=0 |
|
|
|
(–)100 |
nA |
|
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
|
(–)100 |
nA |
|
DC Current Gain |
hFE |
VCE=(–)5V, IC=(–)100mA |
140 |
|
400 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)100mA |
|
|
120 |
|
MHz |
|
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
|
|
(13) |
|
pF |
|
|
|
|
|
|
8.5 |
|
pF |
|
|
|
|
|
|
|
|
|
|
C-E Saturation Voltage |
VCE(sat) |
IC=(–)400mA, IB=(–)40mA |
|
|
(–0.2) |
(–0.6) |
V |
|
|
|
|
|
|
0.1 |
0.4 |
V |
|
|
|
|
|
|
|
|
|
|
B-E Saturation Voltage |
VBE(sat) |
IC=(–)400mA, IB=(–)40mA |
|
|
(–)0.85 |
(–)1.2 |
V |
|
C-B Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)120 |
|
|
V |
|
|
C-E Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)100 |
|
|
V |
|
|
E-B Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
|
|
V |
|
|
Turn-ON Time |
ton |
See specified Test Circuit |
|
|
(80)80 |
|
ns |
|
Storage Time |
tstg |
See specified Test Circuit |
|
|
(700) |
|
ns |
|
|
|
850 |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time |
tf |
See specified Test Circuit |
|
|
(40)50 |
|
ns |
Marking:205
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) A8-9592 No.4494-1/4
FP205
Switching Time Test Circuit
No.4494-2/4
Loading...