Sanyo FP204 Specifications
Ordering number:EN4493
FP204
PNP/NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
Features |
Package Dimensions |
·Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting.
·The FP204 is composed of 2 chips, one being equivalent to the 2SB1123 and 2SD1623, which are placed in one package.
Electrical Connection |
1:Base |
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2:Collector |
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3:Emitter Common |
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4:Collector |
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5:Base |
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6:Collector |
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7:Collector |
Specifications |
(Top view) |
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Absolute Maximum Ratings at Ta = 25˚C |
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unit:mm
2097A
[FP204]
1:Base
2:Collector 3:Emitter Common 4:Collector 5:Base
6:Collector
7:Collector
SANYO:PCP5 (Bottom view)
( ) : PNP
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)6 |
V |
Collector Current |
IC |
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(–)2 |
A |
Collector Current (Pulse) |
ICP |
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(–)4 |
A |
Base Current |
IB |
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(–)0.4 |
A |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2×0.8mm) 1unit |
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0.8 |
W |
Total Power Dissipation |
PT |
Mounted on ceramic board (250mm2×0.8mm) |
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1.1 |
W |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta=25˚C |
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Parameter |
Symbol |
Conditons |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(–)50V, IE=0 |
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(–)100 |
nA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)100 |
nA |
DC Current Gain |
hFE |
VCE=(–)2V, IC=(–)100mA |
140 |
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400 |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
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150 |
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MHz |
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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(22) |
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pF |
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12 |
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pF |
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C-E Saturation Voltage |
VCE(sat) |
IC=(–)1.0A, IB=(–)50mA |
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(–250) |
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(–500) |
mV |
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150 |
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300 |
mV |
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B-E Saturation Voltage |
VBE(sat) |
IC=(–)1.0A, IB=(–)50mA |
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(–)0.9 |
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(–)1.2 |
V |
C-B Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
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V |
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C-E Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)50 |
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V |
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E-B Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
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V |
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Turn-ON Time |
ton |
See specified Test Circuit |
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60 |
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ns |
Storage Time |
tstg |
See specified Test Circuit |
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(450) |
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ns |
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550 |
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Fall Time |
tf |
See specified Test Circuit |
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30 |
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ns |
Marking:204
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) A8-9699 No.4493-1/4
FP204
Switching Time Test Circuit
No.4493-2/4
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