Sanyo FP202 Specifications
Ordering number:EN4495
FP202
PNP/NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
Features |
Package Dimensions |
· Composite type with 2 transistors (PNP and NPN) |
unit:mm |
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contained in one package facilitating high-density |
2097A |
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mounting. |
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· The FP202 is formed with a chip being equivalent to |
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the 2SA1338 and a chip being equivalent to the |
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2SC3392, placed in one package. |
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[FP202]
1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common
4,6:Collector (NPN TR) 5:Base (NPN TR)
SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
( ) : PNP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)5 |
V |
Collector Current |
IC |
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(–)500 |
mA |
Collector Current (Pulse) |
ICP |
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(–)800 |
mA |
Base Current |
IB |
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(–)0.1 |
A |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2×0.8mm) 1unit |
0.75 |
W |
Total Dissipation |
PT |
Mounted on ceramic board (250mm2×0.8mm) |
1.0 |
W |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Marking:202 |
Continued on next page. |
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Electrical Connection |
Switching Time Test Circuit |
1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common 4,7:Collector (NPN TR) 5:Base (NPN TR)
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)53094TH(KOTO) 8-9784 No.4495-1/5
FP202
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter |
Symbol |
Conditons |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
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(–)100 |
nA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)100 |
nA |
DC Current Gain |
hFE |
VCE=(–)5V, IC=(–)10mA |
140 |
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400 |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
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(200) |
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MHz |
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250 |
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MHz |
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Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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(5.6) |
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pF |
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3.7 |
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pF |
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C-E Saturation Voltage |
VCE(sat) |
IC=(–)100mA, IB=(–)10mA |
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(–100) |
(–300) |
mV |
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70 |
200 |
mV |
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B-E Saturation Voltage |
VBE(sat) |
IC=(–)100mA, IB=(–)10mA |
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(–)0.8 |
(–)1.2 |
V |
C-B Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
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V |
C-E Breakdown Voltage |
V(BR)CEO |
IC=(–)100µA, RBE=∞ |
(–)50 |
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V |
E-B Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
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V |
Turn-ON Time |
ton |
See specified Test Circuit |
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(70) |
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ns |
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See specified Test Circuit |
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70 |
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ns |
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Storage Time |
tstg |
See specified Test Circuit |
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(400) |
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ns |
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See specified Test Circuit |
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600 |
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ns |
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Fall Time |
tf |
See specified Test Circuit |
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(50) |
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ns |
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See specified Test Circuit |
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70 |
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ns |
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No.4495-2/5
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