Sanyo FP101 Specifications

Ordering number:EN3960

FP101

PNP Epitaxial Planar Silicon Transistor/

Composite Schottky Barrier Diode

DC-DC Converter Applications

Features

·Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.

·The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP, placed in one package.

Package Dimensions

unit:mm

2088A

[FP101]

1:Base

2:Common

3:Emitter

4:Common

5:Anode

6:Common

7:Common

(Common:Collcector,

Cathode)

SANYO:PCP4 (Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
[TR]
Collector-to-Base Voltage	VCBO		–30	V
Collector-to-Emitter Voltage	VCEO		–25	V
Emitter-to-Base Voltage	VEBO		–6	V
Collector Current	IC		–2	A
Collector Current (Pulse)	ICP		–5	A
Base Current	IB		–400	mA
Collector Dissipation	PC	Mounted on ceramic board (250mm2×0.8mm)	1.3	W
Junction Temperature	Tj		150	˚C
[SBD]
Repetitive Peak Reverse Voltage	VRRM		50	V
Non-repetitive Peak Reverse Surge Voltage	VRSM		55	V
Average Rectified Current	IO		500	mA
Surge Forward Current	IFSM	50Hz sine wave, 1cycle	5	A
Junction Temperature	Tj		–55 to +125	˚C
Storage Temperature	Tstg		–55 to +125	˚C
Marking:101			Continued on next page.

Electrical Connection

1:Base

2:Common

3:Emitter

4:Common

5:Anode

6:Common

7:Common

(Common:Collcector, Cathode)

(Top view)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/62094MT (KOTO) AX-8060 No.3960-1/4

FP101

Continued from preceding page.

Electrical Characteristics at Ta=25˚C

Parameter	Symbol	Conditons		Ratings		Unit
			min	typ	max
[TR]
Collector Cutoff Current	ICBO	VCB=–20V, IE=0			–0.1	µA
Emitter Cutoff Current	IEBO	VEB=–4V, IC=0			–0.1	µA
DC Current Gain	hFE1	VCE=–2V, IC=–100mA	140		560
	hFE2	VCE=–2V, IC=–1.5A	65
Gain-Bandwidth Product	fT	VCE=–10V, IC=–50mA		150		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		32		pF
C-E Saturation Voltage	VCE(sat)	IC=–1.5A, IB=–75mA		–0.35	–0.6	V
B-E Saturation Voltage	VBE(sat)	IC=–1.5A, IB=–75mA		–0.85	–1.2	V
C-B Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–30			V
C-E Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞	–25			V
E-B Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0	–6			V
Turn-ON Time	ton	See specified Test Circuit		60		ns
Storage Time	tstg	See specified Test Circuit		350		ns
Fall Time	tf	See specified Test Circuit		25		ns
[SBD]
Reverse Voltage	VR	IR=200µA	50			V
Forward Voltage	VF	IF=500mA			0.55	V
Reverse Current	IR	VR=25V			50	µA
Interterminal Capacitance	C	VR=10V, f=1MHz		22		pF
Reverse Recovery Time	trr	IF=IR=100mA, See specified Test Circuit			10	ns
Thermal Resistance	Rthj-a	Mounted on ceramic board (250mm2×0.8mm)		120		˚C/W

Switching Time Test Circuit

(TR) (SBD)

No.3960-2/4