Sanyo FH202 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Composite Transistor

VCO OSC Circuit Applications

Ordering number:ENN6220

FH202

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Composite type with a buffer transistor (2SC5226)
and a oscillator transistors (TS4162) contained in the
currently provided MCP package as a VCO oscilla­tor, improving the mounting efficiency greatly.

· The FH202 is formed with two chips, being equiva­lent to the 2SC5245 and TS4162, placed in one
package.

· Optimal for use in oscillator circuit for VHF to UHF
band.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

]6225CS2[1rT

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

]2614ST[2rT

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

]snoitacificepsnommoC[

noitapissiDlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

C

OBC
OEC
OBE

C

C

T

Package Dimensions

unit:mm

2160

[FH202]

0.25

6

12

0.65

2.0

54

3

0.2

0.4250.425

1.25

0.9

2.1

0.15

0 to 0.1

0.2

1 : Collector1
2 : Emitter1
3 : Collector2
4 : Base2
5 : Emitter2
6 : Base1
SANYO : MCP6

02V
01V
2V
07Am
051Wm

02V
21V
2V
05Am
051Wm

002Wm

˚C
˚C

N0199TS (KOTO) TA-1708 No.6220–1/9

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

]6225CS2[1rT

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuO

niaGrefsnarTdrawroF

erugiFesioN

]2614ST[2rT

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuO

niaGrefsnarTdrawroF

erugiFesioN

Marking : 202

Electrical Connection

E2

B2B1

V

OBC
OBE

h

EF

T

boC

BC

V

BE

V

EC

V

EC

V

BC

2

V

|e12S|

EC

FNVECI,V5=

V

OBC
OBE

BC

V

BE

hEF1VECI,V2=
hEF2VECI,V2=

V

T

boC

EC

V

BC

2

V

|e12S|

EC

FNVECI,V2=

FH202

nimpytxam

I,V01=

0=0.1Aµ

E

I,V1=

0=01Aµ

C

I,V5=

Am02=

C

I,V5=

Am02=

C

zHM1=f,V01=

I,V5=

C
C

I,V01=

0=0.1Aµ

E

I,V1=

0=01Aµ

C

Am3=

C
C

I,V2=

Am3=

C

zHG1=f,Am02=

zHG1=f,Am7=0.18.1Bd

Am05=

zHM1=f,V01=

I,V2=

C
C

zHM051=f,Am3=
zHM051=f,Am3=8.10.3Bd

09002

921Bd

08002
07

0.17.1zHG

3161Bd

sgnitaR

7zHG

57.02.1Fp

1.18.1Fp

tinU

TR1

C1 E1 C2

3

2

100

FE

7
5

3

2

DC Current Gain, h

10

7
5

3

2

1.0

h

23 577

Cob -- V

TR2

FE

-- I

10

CB

C

23 57

[Tr1]

VCE=5V

100

IT00357

[Tr1]

f=1MHz

f

-- I

T

2

10

– GHz

7

T

5

3

2

1.0

Gain-Bandwidth Product, f

7

235

5

3

2

1.0

23 5 5772237

Collector Current, IC–mACollector Current, IC–mA

Cre -- V

C

10 100

CB

[Tr1]

VCE=5V

IT00358

[Tr1]

f=1MHz

1.0
7

5

3
2

Output Capacitance, Cob – pF

0.1
7

5

7

0.1

23 57

1.0

23 2 357

Collector-to-Base Voltage, VCB-- V

10

IT00359

1.0
7

5

3

2

0.1
7

Reverse Transfer Capacitance, Cre – pF

5

7

23 57

0.1

1.0

Collector-to-Base Voltage, VCB-- V

23 2357

10

IT00360

No.6220–2/9

12

10

8

6

4

Noise Figure, NF – dB

2

0

57 57

1.0

Collector Current, IC–mA

220
200
180

– mW

160
150

C

140
120
100

80
60
40

Collector Dissipation, P

20

0

0 16014012010080604020

Ambient Temperature, Ta – °C

NF -- I

23357223

P

C

10 100

-- Ta

C

Total dissipation

1 unit

[Tr1]

VCE=5V
f=1GHz

IT00361

[Tr1]

IT00363

FH202

–dB

2

Forward Transfer Gain, S21e

14

12

10

8

6

4

2

0

357

2

S21e

-- I

=5V

CE

V

2V

23 57 7

1.0

Collector Current, IC–mA

10 100

C

2235

[Tr1]

f=1GHz

IT00362

No.6220–3/9

FH202

S parameter [Tr1]

f=100MHz, 200MHz to 2000MHz(200MHz Step)

j50

j25

j100

j150

j10

0

--j10

2.0GHz

10 25

V

=2V

CE

I

=3mA

C

--j25

2.0GHz

2.0GHz

V

CE

I

C

50

=5V

=20mA

0.1GHz

--j50

100

V

CE

I

=7mA

C

0.1GHz

150

=5V

0.1GHz

j200

j250

250

--j250

--j200

--j150

--j100

IT00364 IT00365

f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step)

f=100MHz, 200MHz to 2000MHz(200MHz Step)

0.1GHz

°

90

°

±180

150

°

--150

°

0.1GHz

0.1GHz

°

120

V

--120

CE

I

C

V

I

C

°

=5V

=7mA

=2V

CE

=3mA

V

I

C

2.0GHz

=5V

CE
=20mA

2.0GHz

°

--90

2.0GHz

60

--60

°

°

30

20161284

0

°

--30

°

±180

150

°

--150

°

90

°

120

V

°

I

C

0.1GHz

0.1GHz

0.1GHz

2.0GHz

=5V

CE

=20mA

V

=5V

CE

I

=7mA

C

0.04 0.08 0.12 0.16 0.2

°

60

2.0GHz

2.0GHz

V

CE

I

=3mA

C

=2V

30

j25

°

j10

0

10 25

V

CE

I

=7mA

C

=5V

0

--j10

°

--120

°

°

--90

--60

°

--30

IT00366

°

--j25

j50

50

2.0GHz

2.0GHz

2.0GHz

--j50

V

I

C

100

V

I

C

CE

=3mA

=5V

CE

=20mA

=2V

150

j100

--j100

j150

250

--j150

IT00367

j200

j250

--j250

--j200

No.6220–4/9

FH202

S Parameters (Common emitter) [Tr1]

VCE=5V, IC=7mA, ZO=50Ω

)zHM(qerFS|11|

001027.00.64–379.715.841030.05.86088.06.32–

002216.09.08–729.313.721740.01.75796.06.73–

004794.03.121–656.80.501660.03.15974.06.74–

006654.05.341–080.68.29970.09.25283.05.05–

008044.06.751–527.43.48490.04.55933.08.15–

0001634.05.761–468.30.77011.08.65323.04.35–

0021434.01.671–852.33.07621.09.75213.08.55–

0041334.06.671–748.25.46341.04.85403.03.85–

0061334.09.071–923.24.75061.09.85692.00.26–

0081434.00.561–252.22.45871.06.85392.00.56–

0002934.06.951–750.22.94791.01.85492.01.86–

∠ S

11

S|12|

VCE=5V, IC=20mA, ZO=50Ω

∠ S

12

S|21|

∠ S

21

S|22|

∠ S

22

)zHM(qerFS|11|

001184.08.87–597.929.231220.09.36707.02.83–

002024.02.911–800.912.211330.08.06074.01.15–

004193.06.151–614.014.59250.07.46692.03.55–

006683.04.661–480.76.68170.02.76632.01.65–

008183.09.571–704.51.08290.04.86312.06.65–

0001283.02.871104.41.47411.08.76802.09.75–

0021583.01.271107.35.86431.08.66402.07.06–

0041883.07.661712.36.36651.06.56202.05.36–

0061093.01.261938.28.85671.00.46991.09.76–

0081193.07.651435.23.45791.04.2679102.17–

0002493.01.251913.21.05912.06.06791.02.47–

∠ S

11

S|12|

∠ S

12

S|21|

∠ S

21

VCE=2V, IC=3mA, ZO=50Ω

)zHM(qerFS|11|

001858.04.23–314.92.751040.06.27549.05.61–

002287.07.06–781.85.831070.02.95338.03.92–

004356.01.101–558.58.311101.05.44736.02.34–

006885.05.621–733.44.89411.01.93515.00.05–

008755.07.341–444.37.78221.00.83454.08.35–

0001345.03.651–178.25.87031.06.83624.01.75–

0021635.08.661–644.25.07731.03.04704.03.06–

0041335.05.571–541.25.36641.05.24393.08.36–

0061725.00.771409.11.75551.00.54283.00.86–

0081525.03.071417.17.15861.03.7497300.27–

0002825.08.361465.19.54381.02.94873.08.57–

∠ S

11

S|12|

∠ S

12

S|21|

∠ S

21

S|22|

S|22|

∠ S

∠ S

22

22

No.6220–5/9

FH202

f

h

-- I

3

FE

C

[Tr2]

2

T

-- I

C

[Tr2]

2

FE

100

7

5

3

DC Current Gain, h

2

10

357

5

3

2

1.0
7
5

3

2

Output Capacitance, Cob – pF

0.1

7

12

10

8

6

23 57 7

1.0

Cob -- V

23 57

0.1

Collector-to-Base Voltage, VCB-- V

1.0

NF -- I

VCE=2V

23 5

10

CB

23 2357

C

10

– GHz

1V

IT00368 IT00369

[Tr2]

f=1MHz

7

T

5

3

2

1.0
7

Gain-Bandwidth Product, f

5

1.0

3

1.0

5

3

2

7
5

3

2

23 5 577237

Collector Current, IC–mACollector Current, IC–mA

Cre -- V

V

10

CB

CE

=2V

1V

Reverse Transfer Capacitance, Cre – pF

0.1

10

IT00370

[Tr2]

f=150MHz

7

32

28

–dB

24

2

20

16

23 57

0.1

Collector-to-Base Voltage, VCB-- V

1.0

S21e

CE

V

=2V

2

1V

23 2357

-- I

C

[Tr2]

f=1MHz

10

IT00371

[Tr2]

f=150MHz

4

Noise Figure, NF – dB

2

0

220
200
180

– mW

160
150

C

140
120

100

80
60
40

Collector Dissipation, P

20

0

0 16014012010080604020

V

CE

=2V

1V

23 5 577723

1.0 10 100

Collector Current, IC–mA

P

-- Ta

C

Total dissipation

1 unit

Ambient Temperature, Ta – °C

IT00372

[Tr2]

IT00374

12

8

4

Forward Transfer Gain, S21e

0

357

23 57 7

1.0

Collector Current, IC–mA

10 100

23 5

IT00373

No.6220–6/9

S parameter [Tr2]

S11e
f=50MHz to 500MHz(50MHz Step)

j25

j10

j50

j100

j150

j200

j250

FH202

S21e
f=50MHz to 500MHz(50MHz Step)

°

120

V

CE

I

150

°

50MHz

C

=2V

=3mA

90

°

500MHz

60

°

°

30

10 25

0

--j10

500MHz

V

I

CE

=3mA

C

--j25

S12e
f=50MHz to 500MHz(50MHz Step)

°

120

°

150

°

±180

°

--150

°

--120

50

=2V

--j50

°

90

V

=2V

CE

I

=3mA

C

50MHz

0.04 0.08 0.12 0.16 0.2

°

--90

250150100

50MHz

--j100

°

60

°

--60

500

--j250

--j200

--j150

IT00375 IT00376

±180

°

--150

°

°

--120

--90

°

12 16 2084

--60

°

S22e
f=50MHz to 500MHz(50MHz Step)

j50

30

j25

°

j100

j10

500MHz

0

0

10 25

50

500MHz

250150100

50MHz

500

--j10

V

°

--30

--j25

IT00377 IT00378

--j50

I

C

CE

=3mA

=2V

--j100

--30

j150

j200

--j250

--j200

--j150

0

°

j250

S Parameters (Common emitter) [Tr2]

VCE=2V, IC=1mA, ZO=50Ω

)zHM(qerFS|11|

05569.06.52–84.37.361040.03.57589.01.7–

001849.03.94–03.32.941570.08.26159.03.31–

051229.05.96–69.26.631101.08.15709.00.81–

002309.00.68–56.23.621911.09.24958.07.12–

052588.04.99–33.23.711131.09.53918.06.42–

003378.04.011–70.21.011931.01.03197.09.62–

053668.04.911–98.18.301541.04.52877.07.82–

004458.04.721–37.18.79741.02.12357.08.03–

054648.09.331–85.19.29841.07.71247.07.23–

005748.09.831–44.15.88841.00.51637.04.43–

∠ S

11

S|12|

∠ S

12

S|21|

∠ S

21

S|22|

∠ S

22

No.6220–7/9

FH202

VCE=2V, IC=3mA, ZO=50Ω

)zHM(qerFS|11|

05909.09.53–34.94.851830.00.17949.08.41–

001378.02.66–03.80.141760.00.65948.01.62–

051638.08.98–30.76.721480.09.44447.04.33–

002518.03.601–49.59.711590.05.73856.00.83–

052497.01.911–50.54.011001.04.23095.04.14–

003487.07.821–63.43.401401.07.82055.02.34–

053977.03.631–09.34.99701.00.62815.07.44–

004967.01.341–64.38.49801.09.32394.08.54–

054767.01.841–31.33.19801.04.22474.02.74–

005667.01.251–38.28.78801.07.12364.05.84–

∠ S

11

S|12|

VCE=2V, IC=10mA, ZO=50Ω

)zHM(qerFS|11|

05577.09.16–45.323.541330.04.16638.04.43–

001137.02.101–13.718.421840.05.64426.02.55–

051907.03.421–60.317.211650.06.93184.00.76–

002407.07.631–22.015.501060.01.73783.08.57–

052596.03.641–34.82.001460.05.63533.04.08–

003596.06.251–90.72.69660.08.63692.03.58–

053596.06.751–12.67.29070.02.73072.04.78–

004496.00.261–54.58.98270.05.83542.04.19–

054696.09.461–48.45.78570.09.93132.03.59–

005496.07.761–93.40.58870.05.14222.09.79–

∠ S

11

S|12|

∠ S

∠ S

12

12

S|21|

S|21|

∠ S

∠ S

21

21

S|22|

S|22|

∠ S

∠ S

22

22

VCE=2V, IC=30mA, ZO=50Ω

)zHM(qerFS|11|

05746.06.89–05.739.921420.04.25566.06.16–

001756.01.431–69.225.111230.08.44844.07.09–

051366.05.941–90.610.301730.08.44353.08.701–

002566.06.751–33.218.79140.03.74803.08.911–

052466.02.361–59.93.49640.05.94682.01.821–

003766.03.761–53.83.19150.02.25172.09.331–

053966.02.071–32.70.98550.00.45852.09.831–

004276.00.371–33.69.68060.09.55352.04.341–

054076.09.471–46.51.58660.02.75152.05.641–

005176.06.671–80.53.38170.03.85052.04.841–

∠ S

11

S|12|

∠ S

12

S|21|

∠ S

21

S|22|

∠ S

22

No.6220–8/9

FH202

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.

PS No.6220–9/9