Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
VCO OSC Circuit Applications
Ordering number:ENN6117
FH201
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with a buffer transistor (2SC4871)
and a oscillator transistor (2SC4867) contained in
the currently provided MCP package as a VCO
oscillator, improving the mounting efficiency greatly.
· The FH201 is formed with two chips, being equivalent to the 2SC4871 and 2SC4867, placed in one
package.
· Optimal for use in UHF band oscillator circuit.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]1784CS2[1rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]7684CS2[2rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]snoitacificepsnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
OBC
OEC
OBE
C
C
T
Package Dimensions
unit:mm
2149
[FH201]
0.25
6
12
0.65
2.0
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
61V
8V
5.1V
02Am
051Wm
61V
8V
5.1V
05Am
051Wm
002Wm
˚C
˚C
N0199TS (KOTO) TA-1315 No.6117–1/8
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]1784CS2[1rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
]7684CS2[2rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
Marking : 201
Electrical Connection
E2
B2B1
OBC
OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
OBC
OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
FH201
nimpytxam
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am4=
C
I,V5=
Am4=
C
zHM1=f,V01=
I,V5=
C
C
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
zHG1=f,Am7=
zHG1=f,Am4=3.18.2Bd
Am51=
Am51=
zHM1=f,V01=
I,V5=
C
C
zHG1=f,Am51=
zHG1=f,Am5=2.15.2Bd
09081
0131Bd
09081
0131Bd
sgnitaR
01zHG
4.07.0Fp
0.9zHG
6.01.1Fp
tinU
Tr1
Tr2
C1 E1 C2
h
-- I
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
23 57
0.1
FE
1.0
C
23 57
10
Collector Current, IC–mA
5
3
2
Cob -- V
CB
[Tr1]
VCE=5V
23 5
IT00335
[Tr1]
f=1MHz
– GHz
T
Gain-Bandwidth Produnt, f
1.0
2
10
7
5
3
2
7
5
3
3
5
1.0
Collector Current, IC–mA
5
3
2
f
-- I
T
23 57 237
Cre -- V
C
10
CB
[Tr1]
VCE=5V
IT00336
[Tr1]
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
1.0
23 2357
10
5
IT00337
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
7
0.1
23 57
1.0
23 2357
Collector-to-Base Voltage, VCB-- V
10
5
IT00338
No.6117–2/8
FH201
10
8
6
4
Noise Figure, NF – dB
2
0
57
1.0
Collector Current, IC–mA
220
200
180
– mW
160
150
C
140
120
100
80
60
40
Collector Dissipation, P
20
0
0 16014012010080604020
Ambient Temperature, Ta – °C
NF -- I
C
[Tr1]
VCE=5V
f=1GHz
23 57 23
P
-- Ta
C
10
IT00339
[Tr1]
Total dissipation
1 unit
IT00341
16
14
–dB
12
2
10
8
6
4
2
Forward Transfer Gain, S21e
0
23 57
S21e
1.0
Collector Current, IC–mA
2
-- I
C
23 57
10
[Tr1]
VCE=5V
f=1GHz
23 5
IT00340
No.6117–3/8
S parameter [Tr1]
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S11e
j25
j10
j50
j100
j150
j200
j250
FH201
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S21e
°
0.2GHz
150
120
°
V
CE
=2mA
I
C
I
=5V
V
CE
C
=7mA
90
=5V
2.0GHz
°
2.0GHz
60
°
°
30
10 25
0
50
2.0GHz
2.0GHz
--j10
--j25
--j50
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S12e
±180
150
°
--150
°
120
°
°
°
--120
90
0.2GHz
--90
V
I
C
100
CE
=7mA
V
I
C
=5V
CE
=2mA
150
0.2GHz
=5V
--j100
°
°
60
=5V
2.0GHz
V
CE
I
C
=5V
=2mA
--60
IT00344
2.0GHz
°
CE
=7mA
V
C
I
0.2GHz
0.04 0.08 0.12 0.16 0.2
°
250
0.2GHz
--j200
--j150
IT00342
--j250
°
30
--30
±180
°
--150
0.2GHz
°
--120
°
°
--90
--60
°
IT00343
108642
--30
0
°
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S22e
j50
j25
j100
j150
=5V
=5V
=2mA
--j100
j200
250
0.2GHz
--j250
--j200
--j150
IT00345
j250
0.2GHz
j10
100
0
0
10 25
50
--j10
°
2.0GHz
V
I
2.0GHz
V
150
CE
=7mA
C
CE
I
C
--j25
--j50
No.6117–4/8
FH201
S Parameters (Common emitter) [Tr1]
VCE=5V, IC=2mA, ZO=50Ω
)zHM(qerFS|11|
002219.06.71–467.55.161430.00.97479.03.01–
004538.00.33–282.55.541560.09.96919.02.91–
006247.09.64–357.42.131880.08.26058.03.62–
008946.09.85–862.44.911701.09.75987.06.13–
0001875.07.86–048.34.901121.05.45047.05.53–
0021215.01.87–044.35.001431.02.25896.09.83–
0041544.03.68–321.35.29541.03.05466.06.14–
0061004.00.39–638.22.58451.02.94836.03.44–
0081953.05.89–885.20.97461.04.84516.03.64–
0002913.06.601–792.20.37471.09.74106.03.84–
∠ S
11
S|12|
VCE=5V, IC=7mA, ZO=50Ω
∠ S
12
S|21|
∠ S
21
S|22|
∠ S
22
)zHM(qerFS|11|
002127.01.53–262.211.741030.08.27009.09.61–
004555.09.95–544.99.421050.04.46367.06.52–
006824.05.77–092.72.011560.09.16666.03.92–
008443.09.98–778.51.001870.05.16116.01.13–
0001192.06.001–119.41.29190.07.16385.05.23–
0021452.09.011–322.41.58401.05.16365.01.43–
0041122.04.121–307.30.97711.06.16155.07.53–
0061791.09.821–492.36.37921.06.16045.08.73–
0081871.07.631–649.25.86341.01.16035.07.93–
0002171.06.841–296.28.36751.07.06925.07.14–
∠ S
11
S|12|
∠ S
12
S|21|
∠ S
21
S|22|
∠ S
22
No.6117–5/8
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
357
5
3
2
h
-- I
FE
23 57 7
1.0
Cob -- V
C
10 100
CB
2235
[Tr2]
VCE=5V
IT00346
[Tr2]
f=1MHz
FH201
– GHz
T
1.0
Gain-Bandwidth Product, f
f
-- I
T
2
10
7
5
3
2
7
5
3
5
5
3
2
1.0
23 5 577237
Collector Current, IC–mACollector Current, IC–mA
Cre -- V
C
10 100
CB
[Tr2]
VCE=5V
IT00347
[Tr2]
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
10
8
6
4
Noise Figure, NF – dB
2
0
220
200
180
– mW
160
150
C
140
120
100
80
60
40
Collector Dissipation, P
20
0
23 57
0.1
Collector-to-Base Voltage, VCB-- V
23 5 577723
1.0 10
0 16014012010080604020
Collector Current, IC–mA
Ambient Temperature, Ta – °C
23 2357
1.0
NF -- I
P
C
C
-- Ta
Total dissipation
1 unit
10
IT00348
[Tr2]
VCE=5V
f=1GHz
IT00350
[Tr2]
IT00352
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
16
14
–dB
12
2
10
Forward Transfer Gain, S21e
7
8
6
4
2
0
357
5
23 57
0.1
Collector-to-Base Voltage, VCB-- V
S21e
23 57 7
1.0
Collector Current, IC–mA
1.0
23 2357
2
10
IT00349
-- I
C
[Tr2]
VCE=5V
f=1GHz
23 5
10 100
IT00351
5
No.6117–6/8
S parameter [Tr2]
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S11e
j10
0
--j10
j25
10
--j25
25
2.0GHz
I
C
2.0GHz
I
C
=5mA
j50
50
=15mA
--j50
100
0.2GHz
150
0.2GHz
j100
--j100
j150
j200
250
--j200
--j150
IT00353
j250
--j250
FH201
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S21e
°
120
0.2GHz
0.2GHz
±180
150
°
--150
°
°
--120
I
=5mA
C
°
I
C
=15mA
2.0GHz
90
--90
°
2.0GHz
°
60
--60
°
°
30
20161284
0
°
--30
°
IT00354
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S12e
±180
150
°
--150
°
120
°
°
°
--120
90
0.2GHz
--90
°
°
60
2.0GHz
2.0GHz
=15mA
C
I
=5mA
C
I
0.2GHz
0.04 0.08 0.12 0.16 0.2
°
--60
°
IT00355
30
--30
VCE=5V
f=200MHz to 2000MHz(200MHz Step)
S22e
j50
j25
°
j10
0
0
10 25
--j10
°
50
2.0GHz
2.0GHz
100
I
C
=15mA
--j25
--j50
I
C
150
=5mA
j100
j150
j200
j250
250
--j250
--j200
--j150
--j100
IT00356
No.6117–7/8
S Parameters (Common emitter) [Tr2]
VCE=5V, IC=5mA, ZO=50Ω
FH201
)zHM(qerFS|11|
002947.07.05–922.216.141440.04.56748.04.52–
004385.07.58–009.81.811860.03.45556.04.73–
006784.06.901–636.67.301180.06.15835.03.24–
008824.06.621–672.59.39390.06.15374.04.44–
0001504.03.931–973.49.58601.06.25344.02.64–
0021783.06.051–137.37.87711.06.35124.01.84–
0041773.01.061–852.36.27031.04.45504.06.94–
0061563.08.661–429.25.76241.02.55393.01.25–
0081263.03.471–985.29.16651.06.55783.03.45–
0002163.03.871363.28.65171.09.55383.04.65–
∠ S
11
S|12|
∠ S
12
S|21|
∠ S
21
VCE=5V, IC=7mA, ZO=50Ω
)zHM(qerFS|11|
002705.06.18–224.912.421330.09.16056.09.63–
004283.05.911–595.118.301050.00.16544.00.34–
006143.09.041–640.83.39560.03.36563.05.34–
008233.00.451–281.64.68180.01.56033.03.34–
0001023.00.361–360.58.97990.06.56813.08.34–
0021613.09.071–362.41.47611.07.56113.09.54–
0041513.00.871–617.32.96431.00.56403.04.74–
0061413.07.671072.33.46051.04.46792.03.05–
0081113.02.171229.20.06761.03.36392.06.25–
0002313.04.561656.29.55681.01.26592.08.45–
∠ S
11
S|12|
∠ S
12
S|21|
∠ S
21
S|22|
S|22|
∠ S
∠ S
22
22
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.
PS No.6117–8/8
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