Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
VCO OSC Circuit Applications
Ordering number:ENN6117
FH201
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with a buffer transistor (2SC4871)
and a oscillator transistor (2SC4867) contained in
the currently provided MCP package as a VCO
oscillator, improving the mounting efficiency greatly.
· The FH201 is formed with two chips, being equivalent to the 2SC4871 and 2SC4867, placed in one
package.
· Optimal for use in UHF band oscillator circuit.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]1784CS2[1rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]7684CS2[2rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]snoitacificepsnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
OBC
OEC
OBE
C
C
T
Package Dimensions
unit:mm
2149
[FH201]
0.25
6
12
0.65
2.0
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
61V
8V
5.1V
02Am
051Wm
61V
8V
5.1V
05Am
051Wm
002Wm
˚C
˚C
N0199TS (KOTO) TA-1315 No.6117–1/8
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]1784CS2[1rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
]7684CS2[2rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
Marking : 201
Electrical Connection
E2
B2B1
OBC
OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
OBC
OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
FH201
nimpytxam
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am4=
C
I,V5=
Am4=
C
zHM1=f,V01=
I,V5=
C
C
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
zHG1=f,Am7=
zHG1=f,Am4=3.18.2Bd
Am51=
Am51=
zHM1=f,V01=
I,V5=
C
C
zHG1=f,Am51=
zHG1=f,Am5=2.15.2Bd
09081
0131Bd
09081
0131Bd
sgnitaR
01zHG
4.07.0Fp
0.9zHG
6.01.1Fp
tinU
Tr1
Tr2
C1 E1 C2
h
-- I
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
23 57
0.1
FE
1.0
C
23 57
10
Collector Current, IC–mA
5
3
2
Cob -- V
CB
[Tr1]
VCE=5V
23 5
IT00335
[Tr1]
f=1MHz
– GHz
T
Gain-Bandwidth Produnt, f
1.0
2
10
7
5
3
2
7
5
3
3
5
1.0
Collector Current, IC–mA
5
3
2
f
-- I
T
23 57 237
Cre -- V
C
10
CB
[Tr1]
VCE=5V
IT00336
[Tr1]
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
1.0
23 2357
10
5
IT00337
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
7
0.1
23 57
1.0
23 2357
Collector-to-Base Voltage, VCB-- V
10
5
IT00338
No.6117–2/8
FH201
10
8
6
4
Noise Figure, NF – dB
2
0
57
1.0
Collector Current, IC–mA
220
200
180
– mW
160
150
C
140
120
100
80
60
40
Collector Dissipation, P
20
0
0 16014012010080604020
Ambient Temperature, Ta – °C
NF -- I
C
[Tr1]
VCE=5V
f=1GHz
23 57 23
P
-- Ta
C
10
IT00339
[Tr1]
Total dissipation
1 unit
IT00341
16
14
–dB
12
2
10
8
6
4
2
Forward Transfer Gain, S21e
0
23 57
S21e
1.0
Collector Current, IC–mA
2
-- I
C
23 57
10
[Tr1]
VCE=5V
f=1GHz
23 5
IT00340
No.6117–3/8