Sanyo FH201 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
NPN Epitaxial Planar Silicon Composite Transistor
VCO OSC Circuit Applications
Ordering number:ENN6117
FH201
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with a buffer transistor (2SC4871) and a oscillator transistor (2SC4867) contained in the currently provided MCP package as a VCO oscillator, improving the mounting efficiency greatly.
· The FH201 is formed with two chips, being equiva­lent to the 2SC4871 and 2SC4867, placed in one package.
· Optimal for use in UHF band oscillator circuit.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]1784CS2[1rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]7684CS2[2rT
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]snoitacificepsnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
C
OBC OEC OBE
C
C
T
Package Dimensions
unit:mm
2149
[FH201]
0.25
6
12
0.65
2.0
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6
61V 8V
5.1V 02Am 051Wm
61V 8V
5.1V 05Am 051Wm
002Wm
˚C ˚C
N0199TS (KOTO) TA-1315 No.6117–1/8
Electrical Characteristics at Ta = 25˚C
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]1784CS2[1rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
]7684CS2[2rT
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
Marking : 201
Electrical Connection
E2
B2B1
OBC OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
OBC OBE
h
EF
T
boC
2
|e12S|
FNVECI,V5=
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
V
BC
V
BE
V
EC
V
EC
V
BC
V
EC
FH201
nimpytxam
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am4=
C
I,V5=
Am4=
C
zHM1=f,V01=
I,V5=
C C
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
C
I,V5=
C
zHG1=f,Am7= zHG1=f,Am4=3.18.2Bd
Am51= Am51= zHM1=f,V01=
I,V5=
C C
zHG1=f,Am51=
zHG1=f,Am5=2.15.2Bd
09081
0131Bd
09081
0131Bd
sgnitaR
01zHG
4.07.0Fp
0.9zHG
6.01.1Fp
tinU
Tr1
Tr2
C1 E1 C2
h
-- I
3
2
100
FE
7 5
3
2
DC Current Gain, h
10
7 5
23 57
0.1
FE
1.0
C
23 57
10
Collector Current, IC–mA
5
3 2
Cob -- V
CB
[Tr1]
VCE=5V
23 5
IT00335
[Tr1]
f=1MHz
– GHz
T
Gain-Bandwidth Produnt, f
1.0
2
10
7 5
3
2
7 5
3
3
5
1.0
Collector Current, IC–mA
5
3 2
f
-- I
T
23 57 237
Cre -- V
C
10
CB
[Tr1]
VCE=5V
IT00336
[Tr1]
f=1MHz
1.0 7
5
3 2
Output Capacitance, Cob – pF
0.1 7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
1.0
23 2357
10
5
IT00337
1.0 7
5
3 2
0.1 7
Reverse Transfer Capacitance, Cre – pF
5
7
0.1
23 57
1.0
23 2357
Collector-to-Base Voltage, VCB-- V
10
5
IT00338
No.6117–2/8
FH201
10
8
6
4
Noise Figure, NF – dB
2
0
57
1.0
Collector Current, IC–mA
220 200
180
mW
160 150
C
140 120 100
80 60
40
Collector Dissipation, P
20
0
0 16014012010080604020
Ambient Temperature, Ta – °C
NF -- I
C
[Tr1]
VCE=5V f=1GHz
23 57 23
P
-- Ta
C
10
IT00339
[Tr1]
Total dissipation
1 unit
IT00341
16
14
–dB
12
2
10
8
6
4
2
Forward Transfer Gain, S21e
0
23 57
S21e
1.0
Collector Current, IC–mA
2
-- I
C
23 57
10
[Tr1]
VCE=5V f=1GHz
23 5
IT00340
No.6117–3/8
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