SANYO FC121 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Ordering number:EN3190
FC121
Features
· On-chip bias resistances (R1=2.2kΩ, R2=10kΩ).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC121 is formed with two chips, being equivalent to the 2SA1502, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Package Dimensions
unit:mm
2066
[FC121]
C1:Collector 1
C2:Collector 2
B2:Base2
EC:Emitter Common
B1:Base 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVetatS-FFOtupnIV
egatloVetatS-NOtupnIV
ecnatsiseRtupnI1R2.12.29.2kΩ
oitaRecnatsiseR2R/1R891.022.0242.0
Note:The specifications shown above are for each individual transistor.
Marking:121
OBC
OEC
OBE
C
PC
C
T
OBC
OEC
OBE
EF
T
)ffo(I
)no(I
tinu1 002Wm
V
V
V
V
V
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
V
I,V04–=
BC
EC
BE
EC
EC
BC
EC
EC
0=1.0–Aµ
E
I,V04–=
0=5.0–Aµ
B
I,V5–=
0=513–014–095–Aµ
C
I,V5–=
Am01–=05
C
I,V01–=
Am5–=002zHM
C
zHM1=f,V01–=1.5Fp
I,Am01–=
I,Aµ01–=
E
I,V5–=
C
Am5.0–=1.0–3.0–V
B
0=05–V
R,Aµ001–=
=∞ 05–V
EB
Aµ001–=5.0–7.0–9.0–V
I,V2.0–=
Am01–=7.0–0.1–8.1–V
C
SANYO:CP5
sgnitaR
nimpytxam
05–V
05–V
6–V
001–Am
002–Am
003Wm
˚C
˚C
tinU
52098HA (KT)/6299MO, TS No.3190-1/2
FC121
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3190-2/2
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